Вы находитесь на странице: 1из 8

FQD6N60C 600V N-Channel MOSFET

QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

D D

D-PAK
FQD Series

G!

Absolute Maximum Ratings


Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current

Parameter
Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQD6N60C
600 4 2.4 16 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300

Units
V A A A V mJ A mJ V/ns W W/C C C

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

Typ
----

Max
1.56 50 110

Units
C/W C/W C/W

* When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQD6N60C Rev. A

FQD6N60C 600V N-Channel MOSFET

Package Marking and Ordering Information


Device Marking FQD6N60C FQD6N60C Device FQD6N60CTM FQD6N60CTF Package DPAK DPAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000

Electrical Characteristics
Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter

TC = 25C unless otherwise noted

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse

VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

600 ------

-0.6 -----

--1 10 100 -100

V V/C A A nA nA

On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A
(Note 4)

2.0 ---

-1.7 4.8

4.0 2.0 --

V S

Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF

Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)

VDD = 300 V, ID = 5.5 A, RG = 25

--------

15 45 45 45 16 3.5 6.5

40 100 100 100 20 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.0 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s
(Note 4)

------

---310 2.1

4.0 16 1.4 ---

A A V ns C

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

Typical Performance Characteristics


Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :

10

150 C -55 C
10
0

25 C

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

10

-2

10

-1

10

10

10

-1

Notes : 1. VDS = 40V 2. 250 s Pulse Test

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue

RDS(ON) [ ], Drain-Source On-Resistance

VGS = 10V
4

IDR, Reverse Drain Current [A]

10

10

VGS = 20V

150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
-1

1
Note : TJ = 25

10

12

14

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics


12

Figure 6. Gate Charge Characteristics

1000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

10

VGS, Gate-Source Voltage [V]

VDS = 120V VDS = 300V

800

Capacitances [pF]

Ciss

VDS = 480V

600

Coss
400
Note ; 1. VGS = 0 V 2. f = 1 MHz

200

Crss

2
Note : ID = 5.5A

0 -1 10

10

10

12

16

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)


Figure 7. Breakdown Voltage Variation vs. Temperature
1.2

Figure 8. On-Resistance Variation vs. Temperature


3.0

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON), (Normalized) Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 2.0 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature


4.5

10

Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

10

10 s 100 s 1 ms 10 ms DC

ID, Drain Current [A]


10
3

3.0

10

1.5

Notes :

1. TC = 25 C 2. TJ = 150 C 3. Single Pulse


o

10

-1

10

10

10

0.0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 11. Transient Thermal Response Curve

Z JC Thermal Response (t),

10

D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C t) = 1 .5 6 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (

10

-1

0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS 10V Qgs Qg

VGS

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS RG 10V VGS

RL VDD

VDS

90%

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG 10V
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp

DUT

VDS (t) Time

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

Mechanical Dimensions

D-PAK

Dimensions in Millimeters

FQD6N60C Rev. A

www.fairchildsemi.com

FQD6N60C 600V N-Channel MOSFET

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx
ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series

FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I2C i-Lo ImpliedDisconnect

Across the board. Around the world. The Power Franchise Programmable Active Droop

IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN

POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes SILENT SWITCHER SMART START

SPM Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I15

8 FQD6N60C Rev. A

www.fairchildsemi.com