Creating an NMOS Cell

1. On starting LASI, one has the option of opening an existing layout or naming a new one. Since we are creating a new cell, a new name should be entered. Set the rank to 1. This functionality can also be brought up using the LOAD button. 2. Check if the grid is on. If not press the GRID button (right hand side menu). Make sure the Wgrd and Dgrd values at the bottom of the screen are 1 lambda. If not click on Wgrd and Dgrd buttons in the right menu to select the correct values. Check if the R button in the bottom right is depressed and if not, do so to turn on the marker for the origin. Click on FIT on the top menu, followed by XPAND quite a few times. Click on DRAW on the top menu to redraw the screen (do this frequently to update the screen).

3. Next we need to create the N+ region. Check if the BOX pattern is selected. This should be indicated by some text at the bottom of the screen saying OBJ=BOX. If not, click on OBJ in the right menu and select BOX before drawing. Click on LAYR on the right menu and select the ACTV (active) layer. Click on ADD in the right menu to start drawing. Click on a suitable position of the screen, where the top left corner of the N+ region should be. Next, click on a suitable position where the bottom right corner should be and hence define the N+ region. Click on APUT on the right menu to nail down the box drawn. NOTE: the general procedure is Layer select ADD Draw Polygon APUT. This has to be done every time (though it wont be repeatedly mentioned in the future steps).

4. Next we need to define that the active region is of type N. For this, click on LAYR and select NSEL. Draw a box enclosing the active region to define it as N+.

5. Now, we need to define the poly-silicon gate. Select the POL1 layer and draw a box representing the gate, as shown.

6. We need to make contacts next. Select the CONT layer and draw boxes representing contacts for source, drain and gate. Select POL1 and extend it as shown to include the gate contact.

7. We want to add metal over the contact holes. Select the MET1 layer and draw boxes around the contact as shown. The cell is almost complete at this point, and it is a good idea to save it.

8. We also need to add a body contact. To ensure a good electrical contact, we need to add a small P+ region in the substrate. For this we draw an active layer again and define it using PSEL. Execute the following: Layr ACTVADD and APUT for drawing the active region. Layr PSEL ADD and APUT for drawing the PSEL box around the active region. Layr CONTADD and APUT for body contact. Layr MET1ADD and APUT for metal layer.

9. At this point, one should do a design rule check. Click on SYSTEM in the top menu followed by LASIDRC and SETUP. Enter the path for the suitable .drc file, and set other parameters as shown.

Click on GO to and after some time, itll show the number of flags(design errors). Click on view and select any of the files to see the design error and correct it. Repeat till all errors are corrected.