ADVANCED MOSFET MODELING

Tutorial No: 2
1. In an uniformly doped silicon sample, the electron and hole components of current are
equal in an applied electric field. Calculate the equilibrium electron and hole
concentrations, the net doping and the sample resistivity at 300K.
Ans: J
n
= J
p
(drift currents)
;

p
n
n p
n p
nq pq n p p n
also np =
2
;
p
n
i i i
n p
n ie n n p n

At equilibrium ,
10
9 3
1.5 10
8.66 10 /
3 3
i
o
n
n cm

n
= 1350 cm
2
/ V.sec

10 10 3
3 3 10 2.59 10 /
o i
p n cm

p
= 450 cm
2
/V.sec
Net doping = P
0
- n
0
= 2.59 x 10
10
8.66 x 10
9
= 1.72 x 10
10
/ cm
3
Resistively
1 1
( )
n p
q nr p

+
=
( )
19 9 10
1
1.6 10 8.66 10 13.50 2.59 10 450

+
= 2.68 x 10
5
cm
2. An intrinsic sample of Ge has a resistivity of 60 Ohms.cm. Calculate the value of
current density in an applied field of 10mV/cm if 10
13
donors/cm
3
and 4x10
12
acceptors are
introduced. Take
n
= 4200 cm
2
/V.sec and
p
= 2000 cm
2
/V.sec. Assume that all impurities
are ionised.
Ans. Intrinsic resistivity
1 1 1
( )
i
i i n i p i n p
n q p q n q

+ +
n
i
=
1
( )
i n p
q +
= 9
1
60 1.6 10 (4200 2000)

+
for Ge, n
i
= 1.68 x 10
13
/ cm
3
net doping = n p = N
D
- N
A
= 10
13
4 x 10
12
n p = 6 x 10
12
/ cm
3
(1)
but (n p)
2
= n
2
+ p
2
2 np = n
2
+ p
2
2n
i
2
(n + p)
2
= n
2
+ p
2
+ 2np = n
2
+ p
2
+ 2ni
2
(n + p)
2
= (n - p)
2
+ 4ni
2
n + p =
2 2
( ) 4 n p ni +
=
12 2 13 2
(6 10 ) 4 (1.68 10 ) +
n + p = 3.41 x 10
13
/ cm
3
(2)
(1) & (2) n = 2 x 10
13
/ cm
3
& P = 1.4 x 10
13
/cm
3
J = (nq
n
+ pq
p
)

= q

(n
n
+ p
p
)
= 1.6 x 10
-19
x 10 x 10
-3
(2 x 10
13
x 4200 + 1.4 x 10
13
x 2000) =1.792 x 10
-4
A / cm
2
3. A sample of intrinsic semiconductor has a resistance of 10 Ohms at 364 K and 100 Ohms
at 333 K. Assuming that mobilities are almost constant at this temperature range, calculate
the band gap of the semiconductor.
Ans. Intrinsic concentration n
i

3
2
exp
2
Eg
T
KT

_

,
and int
1
( )
ri
i n p
RA
n q l

+
R - resistance ,A - area ,l - length
3
2
1
3
2 2
1
1 2
1
2
2
exp
2
exp
2
i
i
Eg
T
n KT R
R n Eg
T
KT
_

,

_

,
at T = T
1
= 333K, R
1
= 100
T = T
2
= 364K, R
2
= 10
3
2
1 2
1 333 1 1
exp
10 364 2
Eg
K T T
1 _ _

1
,
, ]
3
2
1 2
364 1 300 300
exp exp
333 10 2 .052 333 364
Eg T T Eg
KT T T
_ _ _ _



, ,
, ,

3
2
333
ln 10
.675 364
Eg
1
_ _

1

, ,
1
]
Eg = .675 x 2.169 = 1.46eV
4. The resistivity of a silicon sample (
o
) is measured at 300 K. the sample is then remelted
and doped with an additional 5x10
16
arsenic atoms/cm
3
. A new crystal is grown that has a
resistivity of 0.1 Ohm.cm and is n-type. Determine the type and concentration of dopant in
the original sample and value of
o
.
Ans. New crystal in n type
1
i
n
nq

19
1 1
.1 1.6 10 1350
i n
n
q



= 4.63 x 10
16
/ cm
3

p = ni
2
/n
net doping n-p =
20
16
2.25 10
4860
4.63 10
D A
N N p
+

2
A D D
ni
N N n N n
n
+ +
+
= (5 4.63) 10
16
Concentration of dopants originally, N
A
= 3.7 x 10
15
/ cm
3
Originally crystal was p type assuming all N
A
are ionized.
P = N
A
&
0
1
o
p
Pq

= 15 19
1
3.7 10 1.6 10 450

Original resistivity = 3.75cm
5. A p-type silicon sample with a resistivity of 100 Ohms.cm at 300K is uniformly
illuminated with light that generates 10
16
excess electron hole pairs (EHP) per cm
3
per sec.
In the steady state, calculate the change in resistivity of the sample caused by the light. If
the light is switched off at t = 0, calculate the time required for the excess conductivity to
drop to 10% of its value at t = 0. Assume
n
= 10
-6
sec
Ans. A p-type sample,
0
1
100
i
p p
cm
q

0
14 3
19
1
1.39 10 /
100 1.6 10 450
p
p cm

0
0
2 20
6 3
14
2.25 10
1.6 10 /
1.39 10
p
p
ni
n cm
p

1 1 10 3
10 /
p p L n
p n G C cm
p
p
= 0
1 14 3
1.39 10 /
p p
P P cm +

1
n p
nq pq

+
=
( )
19 14 10
1
1.6 10 1.39 10 450 10 1350

+
= 99.9cm
Excess conductivity P
1
p
and n
1
p
.
when excess drops to 10% of its initial value excess concentration (carriers) n
p
1
or P
p
1
also
drops to 10%.
1
1
10
.1 exp
100
p
p p
n
p
n
t
But n n
n

_

,
6
1
ln ln 10 2.3 10 sec
p
n n
p
n
t
n


_


,
6. A silicon sample is doped with 10
15
donors /cm
3
. Calculate the excess electron and hole
concentration required, to increase the sample conductivity by 15%. What carrier
generation rate is required to maintain these concentrations? Assume
p
= 10
-6
sec and T
=300 K.
Ans.
20
15 3 5 3
15
2.25 10
10 / , 2.25 10 /
10
n n
n cm P cm

n n
n q
= 10
15
x 1.6 x 10
-19
x 1350 = 0.216/ cm
when in increased by 15%,
new
= + = + .15

new
= 1.15 = n
n
q
n
+ p
n
q
p
(n
n
=
1 1 1
n n n n n n
n n P p p p + +
)
1 1
n n
n p
excess conductivity

1
= .15 = p
1
n
q (
n
+
p
)
( )
1
.15
n
n p
p
q

+
= 19
.15 216
1.6 10 (1350 450)

+
=
1.125 x 10
14
/ cm
3
G
L
=
1 14
6
1.125 10
10
n
p
p

= 1.125

10
20
/ cm
3
/ sec
[Note: Use n
i
= 1.5x10
10
cm
-3
, n = 1350 cm
2
/V.s and p = 450 cm
2
/V.s for silicon at 300 K]