Spin Field Effect transistor

Spintronics
Manipulate spin instead of charge Why ?
FET Gate-channel tunneling Heat dissipation Power consumption Device density Faster (?)

Discussion about
Step by step device architecture and the physics behind Operation of :
Conventional FET Datta-Das FET Spin Hall Effect Transistor

AND Gate using Spin Field Effect Transistor

Building up the transistor Spin Injection

pn junction Top: p-AlGaAs/ GaAs Bottom: nAlGaAs/ GaAs Top layer removed
J. Wunderlich, A. C. Irvine, Jairo Sinova, B. G. Park, L. P. Zrbo, X. L. Xu, B. Kaestner, V. Nov'ak, and T. Jungwirth, Nature Physics 5, 675 (2009)

Building up the transistor Spin Injection

n-Region: the rest of the device Reverse bias No current in dark Circularly polarized light helicity(+/-) spin injection Heavy Hole and Light Hole - 50% polarized HH, LH & Spin-Orbit-split-Off 0% polarized

Spin Injection Rules for Optical Transition

I. Ztid, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004)

Building up the transistor

RH= VH/IPH IPH very little change Sign RH helicity/x |RH2(x)| < |RH1(x)|

Spin Hall Effect Spin Orbit Coupling Larmor Precession Spin Relaxation

J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Spin Precession
Spin Orbit Interaction
Charged particle electric field in lab frame magnetic field in the rest frame Rashba interaction - transverse electric field
Where is the E-field?
Band Bending Cannot be manipulated in this structure

Bz Rashba = 2m*Eyvx/eh2

Dresselhaus interaction coefficient

Larmor Precession
d/dt = 2gBBz/h = (const) *vxEy d/dx = (const) *Ey

 Rabi Formula max. prob. of +z spinor to z for = 0

Bz const/ Bxy rotating 0 = Larmor frequency = frequency of rotation in x-y plane

Spin Relaxation

Ideally Ensemble of spinors frozen in the frame of Larmor precession

But Interaction surroundings relaxation

Spin Flip Time = h/2gBBz

Longitudinal (T1)
Loss of energy - High energy state to lower Collisions(e.g.) pulse of magnetic field will be some Bxy s.t. = 0
Several collisions if Contact time < Spin Flip Time Collisions of opposite polarity larger T1

Transverse (T2)
Collisions z component changes Larmor frequency any polarity Rest frame spinors not frozen

Drag term(T1, T2) in addition to the Zeeman terms in time evolution of < > - decay of polarization

 Spin coherence GaAs 100m Spatial spin precession period

If = -, a constant Otherwise, (const)/w

Spin Diffusion vs. Precession

Monte Carlo simulation diffusive spin transport =5.5 meVA: = -24meVA small width quasi 1-d Spin precession and diffusion independent of mean free path (?) Mean free path < precession period
Strong Disorder
J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Spin Hall Effect

Opposite spins in magnetic field scattered in opposite direction Majority and minority spin accumulation at Hall bar edges charge accumulation Hall Voltage Intrinsic if only Rashba Extrinsic otherwise (spin dependent band structure or spin dependent scattering)

Strong Disorder SO Couping

Another Rashba

Skew scattering

Building up the transistor

Spin Orbit Coupling Larmor Precession Spin Hall Effect Spin Relaxation

RH= VH/IPH IPH very little change Sign RH helicity/x |RH2(x)| < |RH1(x)|

J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Building up the transistor

J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Building up the transistor

No IPH Not charge current: But Spin Current Diffusion of spin Variation of electrochemical potential of the majority and minority spins Later prevents coupling between Gate voltage and Spin injection
J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Conventional 2DEG Transistor

I , as VG

p-layer gate VG Reverse Bias Charge depletion & repulsion: small I Poor screening / pushed closer to ionized donor: small
J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Datta- Das SPINFET

Spin Polarized injection FM1 Spin precession controlled by Gate ISD depends on final polarization of the spin charge carriers Limitations:
Spin injection efficiency/ Spin Detection - Ferromagnet Poor gate control Stray magnetic field /FM /Dresselhaus /Collisions random not an offset that can be adjusted

Spin Hall Effect Transistor

p-layer gate (VG)

Transverse E- field BRashba

Can Control precession Can Control charge accumulation in 2DEG

Datta- Das SPINFET like regime (Non-monotonic) Increase in VH in On state

Control of Spatial period of precession

Control Charge in 2DEG (Main Control)

Reverse bias regime open and close the gate
J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

Spin Hall Effect Transistor

J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

AND Gate

J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010).

References
S. Bandyopadhyay, M. Cahay, Introduction to spintronics J. Wunderlich, B.-G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 1801(2010). J. Kikkawa and D. Awschalom, Nature 397, 139 (1999) S. Datta, Electronic Transport in Mesoscopic system J. Wunderlich, A. C. Irvine, Jairo Sinova, B. G. Park, L. P. Zrbo, X. L. Xu, B. Kaestner, V. Nov'ak, and T. Jungwirth, Nature Physics 5, 675 (2009) J. E. Hirsch, Phys. Rev. Lett. 83, 1834 (1999) S. Valenzuela and M. Tinkham, Nature 442, 176 (2006) I. Ztid, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004)

Thank you