Environmental, Safety and Health Thrust

Jun-ichi Aoyama JEITA (Sony) Abel Hsu TSIA (UMC) Jim Jewett SIA (Intel)

Hsinchu, Taiwan December, 2000

AGENDA
Introduction/Background 2000 Update Contents
Technology & ESH Timing Red/Yellow Coding Cross-TWG Activity

2001 Revision: Issues & Needs

Hsinchu, Taiwan December, 2000

Work in Progress - Not for Publication

ESH THRUST COVERAGE

Assembly & Packaging Factory Integration Front-End Process Interconnect Lithography

Hsinchu, Taiwan December, 2000

CROSS THRUST SCREEN

Chemicals, Materials and Equipment Management Climate Change Mitigation Workplace Protection Resource Conservation ESH Design and Measurement Methods
Hsinchu, Taiwan December, 2000

ESH THRUST OBJECTIVES

MAKE FACTORIES WORLD CLASS SAFE PLACE TO WORK MANAGE MATERIALS W/PROACTIVE ESH PRACTICES DISPOSAL ABATEMENT USE MINIMIZATION CONSERVATION OF WATER and ENERGY RESOURCES
Hsinchu, Taiwan December, 2000

2000 Update Contents

Node and Gate Shrink Accelerated , but New Chemical Introductions Slowed Other Technology Driven Challenges Were Not Changed ESH Driven Challenges Remain Unchanged 180nm and pre-130nm Technology Requirement Solutions Re-coded
Hsinchu, Taiwan December, 2000
Work in Progress - Not for Publication

T able 69a Ch em icals, M at erials an d E qu ipm en t M an agem en t T ech n ology R equ irem en t s N ear T erm
Y EAR T E CH N OL OGY N ODE ESH Ch em ica l r isk a ssessm en t Da t a a ccu m u la t ion E xist in g ch em ica ls New ch em ica ls 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m Application 50% D R IV E R

Algorithm

N ew processes

Design of data base Design of data base

Assessm en t of n ew ch em ica ls: sa fet y da t a a n d en vir on m en t a l loa d/im pa ct Redu ct ion of en vir on m en t a l loa d/im pa ct m a t er ia ls E xist in g m a t er ia ls

Evaluation terms and method

Evaluation system

100% After 2 N ew years of processes market intro Data accumulation

Lead-free process and structure Bromine-, Antimony-free fireresistant plastics, Beryllium-free Assessment of other materials

By-pr odu ct m a t er ia ls

Substitution process and disposal treatments Process evaluation

Ma t er ia l LCA E n vir on m en t a l m a n a gem en t Ma t er ia l ba la n ce

Algorithm Algorithm Pollutant release, and transfer disclosure (PRTR)

Substitutio n process and disposal treatments Operation Automatic PRTR data acquisition system Operation

Disposa l m a n a gem en t E qu ipm en t st a n da r ds

System design Analysis of impact Implement comprehensive foundation of international standards Do testing and generate specifications

E SH im pa ct of spa r es a n d con su m a bles S olu t ion s E xist

Analysis of impact

S olu t ion s B ein g Pu rsu ed

N o K n ow n S olu t ion s

Hsinchu, Taiwan December, 2000

T able 69a Ch em icals, M at erials an d E qu ipm en t M an agem en t T ech n ology R equ irem en t s N ear T erm
Y EAR T E CH N OL OGY N ODE ESH Ch em ica l r isk a ssessm en t Da t a a ccu m u la t ion E xist in g ch em ica ls New ch em ica ls 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m Application 50% D R IV E R

Algorithm

N ew processes

Design of data base Design of data base

Assessm en t of n ew ch em ica ls: sa fet y da t a a n d en vir on m en t a l loa d/im pa ct Redu ct ion of en vir on m en t a l loa d/im pa ct m a t er ia ls E xist in g m a t er ia ls

Evaluation terms and method

Evaluation system

100% After 2 N ew years of processes market intro Data accumulation

Lead-free process and structure Bromine-, Antimony-free fireresistant plastics, Beryllium-free Assessment of other materials

By-pr odu ct m a t er ia ls

Substitution process and disposal treatments Process evaluation

Ma t er ia l LCA E n vir on m en t a l m a n a gem en t Ma t er ia l ba la n ce

Algorithm Algorithm Pollutant release, and transfer disclosure (PRTR)

Substitutio n process and disposal treatments Operation Automatic PRTR data acquisition system Operation

Disposa l m a n a gem en t E qu ipm en t st a n da r ds

System design Identify gaps in existing standards Implement comprehensive foundation of international standards Analysis of impact Do testing and generate specifications

E SH im pa ct of spa r es a n d con su m a bles S olu t ion s E xist

Analysis of impact

S olu t ion s B ein g Pu rsu ed

N o K n ow n S olu t ion s

Hsinchu, Taiwan December, 2000

T able 69a Ch em icals, M at erials an d E qu ipm en t M an agem en t T ech n ology R equ irem en t s N ear T erm (con t in u ed)
Y EAR T E CH N OL OGY N ODE In t ercon n ect Low m a t er ia ls spin on a n d CVD Copper pr ocesses Adva n ced m et a lliza t ion P la n a r iza t ion P la sm a pr ocesses Fron t en d Processes H igh 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m D R IV E R

Emissions models/ESH benign Lowest ESH impact solvents/ processes CVD precursors Plating bath recycle/ESH benign Extend plating bath Lowest ESH impact CVD processes life plating chemistries Improved chemical Lowest ESH impact processes/ utilization emissions characterization Reduce slurry required Slurry recycling/ESH benign chemistries Lowest ESH impact etch chemistries ESH evaluation for high Low-hazard precursor materials Lowest ESH impact ESH benign processes high materials ESH benign processes Low-hazard deposition methods Lowest hazard metal High materials compounds without potentially toxic/bioaccumulative metals (Pb, Ni) Lowest Subatmospheric delivery for hazard additional dopants dopant materials

S peed, sign al loss S peed, reliabilit y Perform , cost , SoC Plan arit y E t ch /clean

Dopin g pr ocesses

Su r fa ce pr epa r a t ion

Subatmospheric hydride and halogenated gas delivery systems Optimized surface Fundamental research Ongoing research and preparation processes on surface/interface integration of science solutions Alternate wafer rinse Incorporation into new methods rinse/clean tools In situ chemical Alternate clean Chemical optimization generation of high cleans methods (O , super3

critical etc., research) F r on t en d et ch Characterize plasma by-products Elimination of sulfuric acid Plasma process simulation-optimize processes for by-product destruction N o K n ow n S olu t ion s

S olu t ion s E xist

S olu t ion s B ein g Pu rsu ed

Hsinchu, Taiwan December, 2000

T able 69a Ch em icals, M at erials an d E qu ipm en t M an agem en t T ech n ology R equ irem en t s N ear T erm (con t in u ed)
Y EAR T E CH N OL OGY N ODE L it h ograph y In t r odu ct ion a n d in t egr a t ion of n ew equ ipm en t in t o m a n u fa ct u r in g Opt ica l e-Bea m E UV Specifica t ion a n d in t egr a t ion of n ew ch em ica ls a n d m a t er ia ls in t r odu ced in t o m a n u fa ct u r in g: Opt ica l, e-Bea m , a n d E UV S olu t ion s E xist 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m D R IV E R

R edu ced feat u re size Hazardous chemicals, material compatibility Ionizing radiation, ergonomics, chemical consumption, disposal Non-ionizing radiation, ergonomics, chemical consumption, disposal R edu ced New chemicals, purification requirements, wastes, emissions feat u re size

S olu t ion s B ein g Pu rsu ed

N o K n ow n S olu t ion s

Hsinchu, Taiwan December, 2000

T able 70a Clim at e Ch an ge M it igat ion T ech n ology R equ irem en t s N ear T erm
Y EAR T E CH N OL OGY N ODE ESH E n er gy con su m pt ion : over a ll fa b equ ipm en t kWh /cm 2 (kWh /in 2 ) E n er gy con su m pt ion : fa b fa cilit y kWh /cm 2 (kWh /in 2 ) 300 m m pr odu ct ion fa b equ ipm en t en er gy con su m pt ion Redu ce P F C em ission s Fron t E n d Processes Redu ce P F C em ission s (et ch ) L it h ograph y E qu ipm en t en er gy a n d m a t er ia l con su m pt ion e-Bea m Specifica t ion a n d in t egr a t ion of n ew ch em ica ls a n d m a t er ia ls in t r odu ced in t o m a n u fa ct u r in g e-Bea m A ssem bly & Pack agin g Redu ce en er gy u se X Emission of climate change gases, energy consumption R edu ced feat u re size X* 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m 0.4 (2.6)0.5 (3.2) D R IV E R

0.5 (3.2)0.7 (4.5)

0.5 (3.2)0.7 (4.5) 0.5X

0.4 (2.6)0.5 (3.2) Produ ct ivi ty

[Note 1] Develop optimized etch processes, alternate chemistries, and cost effective abatement Continued research in alternate etch chemistries R edu ced feat u re size

Use of climate change gases, air emissions, wastes 0.8X

* X is based on 200 m m t ool en ergy per w afer requ irem en t . [N ot e 1] S olu t ion s E xist 10% or great er absolu t e redu ct ion from 1995 baselin e by 2010 is agreed t o by t h e W orld S em icon du ct or Cou n cil. S olu t ion s B ein g Pu rsu ed N o K n ow n S olu t ion s

Hsinchu, Taiwan December, 2000

T able 71a
Y EAR T E CH N OL OGY N ODE ESH E qu ipm en t sa fet y, ga ses a n d ch em ica ls lea k , a n d equ ipm en t st a bilit y du r in g a n ea r t h qu a k e Sa fe in t er fa ce of Au t om a t ed Ma t er ia l H a n dlin g Syst em s (AMH S) a n d m a n u fa ct u r in g equ ipm en t Com pr eh en sive exposu r e da t a MSDS da t a sh eet s P er son a l pr ot ect ion equ ipm en t (P P E ) P P E t r a de-off ver su s h a za r d elim in a t ion or en gin eer in g con t r ol P r ot ocol for select in g r isk m a n a gem en t solu t ion s Redu ced ch em ica l exposu r e

W ork p lace Prot ect ion T ech n ology R equ irem en t s N ear T erm
2000 2001 130 n m 2002 130 n m 2003 2004 90 n m 2005 100 n m DR IV E R

1999 180 n m

Implement S2 Safety Guidelines and S8 Ergonomic/ 50, 51 Human Factor Guidelines Standardized control features and procedures

Industry standardized format

Comprehensive industrial hygiene (IH) exposure data For operations and maintenance Use format Test and rate PPE against chemicals used Cost of PPE per employee per shift

Industry acceptance

Full implementation

E r gon om ic im pr ovem en t N ew ch em ica l qu a lifica t ion X-r a y exposu r e E n docr in e disr u pt er s in m old r esin N -m et h yl-2-pyr r olidon e (N MP ) exposu r e S olu t ion s E x ist

Isolate workers from chemicals and by-products during operation and maintenance Understand Minimize/eliminate physiological stresses physiological stresses Collaboration of government/academia/industry/company resources Fundamental research required Develop new materials Phase out S olu t ion s B ein g Pu rsu ed N o K n ow n S olu t ion s

50 SEMI. S2-93A Safety Guidelines for Semiconductor Manufacturing Equipment. 51 SEMI. S8-95 Safety Guidelines for Ergonomics / Human Factors Engineering of Semiconductor Equipment.

Hsinchu, Taiwan December, 2000

T able 71a W ork place Prot ect ion T ech n ology R equ irem en t s N ear T erm
Y EAR T E CH N OL OGY N ODE In t ercon n ect Copper pla t in g pr ocesses Fron t E n d Processes Less fla m m a ble wet deck m a t er ia ls Wor k en vir on m en t Develop new materials Continued reduction of physical stressors in clean room environment noise, non-ionizing radiation, thermal stress Lowest hazard materials and precursors Low Reduced potential for exposure Low hazard dopants pressure during maintenance dopants Robotics safety Reduced chemical use Inert material cleans in clean processes (supercritical, cryogenic) Minimize potential Optimize processes to minimize production of potentially exposure to plasma hazardous by-products etch by-products S olu t ion s B ein g Pu rsu ed N o K n ow n S olu t ion s Tools w/reduced employee exposure 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m D R IV E R

H igh Dopin g

Su r fa ce pr epa r a t ion F r on t en d et ch

S olu t ion s E xist

Hsinchu, Taiwan December, 2000

T able 71a W ork place Prot ect ion T ech n ology R equ irem en t s N ear T erm (con t in u ed)
Y EAR T E CH N OL OGY N ODE L it h ograph y H ea lt h a n d sa fet y R edu ced feat u re size Ergonomics issues, potential exposure to hazardous chemicals Ergonomics issues, hazardous chemicals, potential exposure to ionizing radiation Ergonomics issues, potential exposure to hazardous chemicals, potential exposure to non-ionizing radiation R edu ced feat u re size Potential exposure to toxic chemicals Hazardous chemical use S olu t ion s B ein g Pu rsu ed N o K n ow n S olu t ion s 1999 180 n m 2000 2001 130 nm 2002 130 n m 2003 2004 90 nm 2005 100 n m D R IV E R

Opt ica l e-Bea m EUV Specifica t ion a n d in t egr a t ion of n ew ch em ica ls a n d m a t er ia ls in t r odu ced in t o m a n u fa ct u r in g Opt ica l e-Bea m a n d E U V S olu t ion s E xist

Hsinchu, Taiwan December, 2000

CROSS-TWG ACTIVITY
FI ITWG Infrastructure Issue Identified in July 2000 FI Update Addressed In 300mm Factory Conversion

Hsinchu, Taiwan December, 2000

Work in Progress - Not for Publication

2001 REVISION PLANS

Hsinchu, Taiwan December, 2000

PERSPECTIVE CHANGE TO ESH SCREEN

RATE OF GROWTH IN SEMICONDUCTOR INDUSTRY RESULTS IN PARALLEL GROWTH IN POLLUTION MANY NEW AND EXOTIC CHEMICALS REQUIRED FOR FUTURE TECHNOLOGIES MATERIALS HAVING SERIOUS EHS IMPLICATIONS SHOULD BE RESTRICTED OR BANNED
Hsinchu, Taiwan December, 2000

CONSEQUENCES ARE:
USE OF MATERIALS MUST CONSIDER:
COMPREHENSIVE CHARACTERIZATION OF EHS PROPERTIES HAZARD TO EMPLOYEES APPROACHES ZERO RELEASE TO ENVIRONMENT APPROACHES ZERO CONTENT IN PRODUCTS RESTRICTED

Hsinchu, Taiwan December, 2000

REMAINING IN 2001. . .
Improve Resource Conservation (Water and Energy) Objectives Resolve Conflicts Between Technology Driven and ESH Driven Technology Requirements Increase Cross-Thrust Interactions

Hsinchu, Taiwan December, 2000

Work in Progress - Not for Publication