CZ and FZ Processes

Dr. S. K. Bhatnagar Professor and Head, R & D Center for Engg. and Science, J. E. C. Kukas

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Mono-crystal Silicon Growth

Crystal Pulling
CZ Method Floating Zone Method

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Surface Tension
Weight of the liquid silicon pulled up is supported by the surface tension of the melt. For 300 mm diameter wafer and 1 mm pulled melt, weight = 165 gm Weight of 1 meter long crystal = 165 Kg. It is important that the pulled liquid solidifies quickly and does not melt again. The temp. gradient across the pulled crystal should be very large.

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Czochralski (CZ) crystal growth

It involves the crystalline solidification of atoms from a liquid phase at an interface. The process consists of the following steps: 1. A fused silica crucible is loaded with a charge of undoped EGS together with a precise amount of diluted silicon alloy. 2. Evacuate the growth chamber. 3. Back-fill with inert gas prevent atmospheric gases from entering the chamber.
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Czochralski (CZ) crystal growth

4. Heat Crucible to 1421o C to melt Silicon. 5. Introduce seed crystal in molten silicon. Seed crystal is slim ( 5 mm dia) and 100 300 mm long with precise orientation 6. The seed crystal is then withdrawn at a very controlled rate. 7. The seed crystal and the crucible are rotated in opposite directions while this withdrawal process occurs.
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Crystal Growing Theory

Every impurity has a solid solubility in Silicon and a different equilibrium solubility in the melt. Segregation Coefficient k0 = Cs / Cl Cs , Cl = equilibrium concentrations of the impurity in the solid and melt near the interface

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Distribution of impurity in the grown crystal

Freezing Relation

Where

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Pull Rate and Growth Rate

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Float Zone Cystal Growth

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The FZ Process consists of the following steps:

1. A polysilicon rod is mounted vertically inside a chamber, which may be under vacuum or filled with an inert gas. 2. A needle-eye coil that can run through the rod is activated to provide RF power to the rod, melting a 2 cm long zone in the rod. This molten zone can be maintained in stable liquid form by the coil. 3. The coil is then moved through the rod, and the molten zone moves along with it.

4. The movement of the molten zone through the entire length of the rod melts the polysilicon and solidifies it into a single crystal.
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Alternative
Alternatively the coil can be kept stationary and the rod can be moved up or down through the coil.

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Wafers from the ingot

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Thank You

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Schematic of a Float Zone System for growing large diameter boules

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Mark identifications Fig:q422

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