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Thyristors
I GT Gate + Anode IA VF
(a) Symbol
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Cathode
+
p pnp n p
Anode
Q1
pnp
I GT
Gate
n p n - Cathode npn
npn Gate
Q2
Cathode
Device Operation
When the anode is made positive w.r.t the cathode , the junctions J1 and J3 are forward biasesd and J2 is revesed biased.then the device is in forward blocking or OFF state. If the anode to cathode voltage VAK is increased to sufficiently large value the reverse biased junction J2 breaks this is known as avalanche breakdown resulting in a large forward current . The device is then in conducting or ON state.
V-I Characteristics
The anode current must be more than a value known as Latching current IL to maintain the required amount of flow or the device reverts to the blocking condition. Once a thyristor conducts it behaves like a conucting diode and there no control over the device. However if the forward anode current is reduced to a level known as Holding current I H- a depletetion region forms and the device goes to blocking state. Holding current is the minimum current to maintain the thyristor in the ON state.
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Q1 is turned on.
I C1 1 I B1 1 2 I B 2
I C1 2 I B 2 .
If 1 2 ,
High power devices (100 400A) Turn-on time => 10 25s. At t t 2 ~ t 3 , SCR cannot be turned off by simply removing the gate signal. It can only be turn-off if anode current IA drops below the holding current IH.
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12
TRIAC
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Triac (1)
- A diac with a gate terminal - A bilateral device: can conduct current in both the directions Gate - Similar control action with SCR --It consists of two SCRs oriented in opposite directions
Anode 2
Anode 1 (a)
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Triac (2)
I A2 +ve
A2
n4 n5 n2 p1
p1
IH VBR VBR
p2 n3 A1 (b)
n1
A2 -ve
Gate
(c)
When A2 is given positive voltage w.r.t A1 we get conventional behaviour of one of the SCR , when A2 is is negative w.r.t M1 the other SCR behaves conventionally. the V-I char. Of the triac is therefore symmetrical .
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Diac (1)
It functions as two Shockley Diodes parallel-inversely connected together. Permits triggering in either direction. Again it is a 3-layer 2 terminal bidirectional avalanche diode with no cathode The basic structure is similar to a pnp transistor but without any connection at the base and the doping of the two junctions are nearly same.
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Diac (2)
Anode 1
p1
B2
E
AIuminium rod
Silicon slab
VBB
ohmic contact
B1
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VE
Cut off region Negative resistance region peak point
Important Parameters:
Saturation region
Vp
VBB =10V
E(sat)
VV
Valley point
R
Ip I E0 ( A)
B1
Iv
50
Any further increase in IE will place the UJT in the saturation region
I E (mA)
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