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AC PERFORMANCE OF NANO ELECTRONICS

BY MOHAMMED SALMAN KHAN 09081A0431
GUIDE : Mr. ALEEM (Dept.Of ECE)
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FACTS TO DISCUSS.
One dimensional nanostructures as interconnects. AC performance of active 1D transistors. Radiation properties of 1D nano wires.

What is nanotechnology ?
Nanotechnology is basically a material science . Creation and use of systems, devices, and structures which have special functions or properties

because of their small size.

NANO ELECTRONICS..
Nanoelectronics is nanotechnology applied in the
context of electronic components and circuits. Ordinary transistors dont fall under nanoelectronics even though they have size less than 100nm.

Moores Law
10000 1000 100 10 1 0.1
Featured size

1980

2000

2020
Year

2040

2060

Nano crystals Nano tubes

NANO ELECTRONIC

DEVICES

TUNNEL DEVICES

BALLISTIC TRANSPORT DEVICES

 CNT Graphene.

is formed from

2D nanostructures known as

CNT is often called zero band semiconductors.

Fig: a

Fig .b
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ELCTROSTATIC CAPACITANCE
Generates due to space between ground plane and CNT.

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Quantum Capacitance

In 1D model of CNT , energy is required to add an electron

to the structure.

In CNT Vf = 8 x 10^ 5 m/s

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Kinetic Inductance
Current lags Electric field voltage. This inductance effect is known as Kinetic inductance. It is dominant in CNT rather than Magnetic inductance.

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Kinetic Inductance can be used as a part of tank circuit .Research is going on.

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 In CNT 4 channels are there.

In charged mode of CNT CQ is replaced by 4CQ and

LK by LK/4.
AC impedance of CNT contains significant amount of C and L.

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SOURCE

DRAIN

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Ballistic transport

If the carrier moves a length less than scattering length then ballistic transport takesplace. Scattering depends on both electric field and temperature.

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Effect of electric field

Low field strength : Impurity scattering. Higher field strength: Phonon scattering. Large field strength : Surface scattering Average scattering length in nano materials: 17 nm

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Effect of temperature

Low temperature : Impurity scattering

Higher temperature : Phonon scattering

In nano electronic materials Ballistic transport is desirable

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Ballistic transport needs..

1. Increase in the scattering length.

2. Reduce in surface roughness scattering.

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Relevant frequency scales

1. RC time
R= 6.25K C= 4Af

2. Transconductance

Take gm = 10
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Small Signal Equivalent model

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 Gate to Source Capacitance Transconductance

Drain Resistance
Series Resistance Parasitic Capacitance
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CUT OFF FREQUENCY Ft = 80 GHz / L gate

Generated by fringing
between

electric fields electrodes.

Almost

equal

to

C = 10^-16 F

intrinsic capacitance.
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 Availability of

1D nano structures

having

length comparable with the wavelength of microwaves. 1D nano structures exhibit radiating property.

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APPLICATIONS 1. A solution to the nano interconnect problem .

2. Wireless interconnect to nano sensors .

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Unsolved problems..
Only applicable with one dimensional nano tubes.

Losses occurs when thin wires of two dimensional

geometry are used.

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 Noise in the case of microwave amplifier is reduced .

Paulis exclusion principle. Microwave generators having quantum limit of sensitivity can be generated using CNT s.

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CHALLENGES..........
Impedance matching. Extension

of

radiation property from 1D to thin

wires.
Integration of nano systems can overcome the problem

of impedance matching.
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CONCLUSIONS .
Nano electronic devices can act as interconnects, transistors and antenna.

Nano tube transistor can be faster than conventional

semiconductor technologies.

The challenges can be overcome by integration of nano

systems.
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1.

Peter. J.Burke, AC Performance of nano electronics : Towards a ballistic THz nano tube transistor , ( IEEE Transactions on nano technology),2004, Pages ( 1982 1986).

2. P. J. Burke, "An RF Circuit Model for Carbon Nanotubes," , Ieee T Nanotechnol, vol. 2, pp. 55-58, 2003. 3. K.K Chattopadhyay & A.N Banarjee Introduction to Nano science and Nano technology.( PHI Publications,2009)

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