RATING OF FUSE F1

It is calculated as:= 2302 = 325V Pout = 640 W, Vdc

II (max) = 3.13 xx pp (max) = 3.13

Pout 640 Vdc 325

= 6.16A => Fuse rating = 6.16/2=4.35 A

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EMI suppression capacitors. The capacitors C1, C2, C3 and C4

are selected as per commonly used EMC standards.

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ELECTROMAGNETIC COMPATIBILITY (EMC)

is the branch that studies the unintentional generation, propagation and reception of electromagnetic energy with reference to the unwanted effects (Electromagnetic interference) that such energy may induce.

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EMI RATING/CLASSIFICATION
For residential, commercial and light industrial

environment we consider CLASS B EMI rating. Standard values of capacitors used as per class B rating are:
Across line and neutral : 220 nF. Across line and ground : 10 nF.

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TYPES OF CAPACITORS AS PER SAFETY STANDARDS

As per INTERNATIONAL STANDARD IEC 60384 14

capacitors are classified based on impulse testing as:

X1; impulse tested for 4KV. Y1; impulse tested for 8KV. X2; impulse tested for 2.5KV. Y2; impulse tested for 5KV. Similarly X3, Y3 for further lower voltages, which are not

upto safety standards.

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Thus we have used following capacitors in the ckt as per suitability.
C1 & C2; Type X2 Capacitance = 220 nF. C3 & C4; Type Y2 Capacitance = 10 nF

RECTIFIER DESIGN

RECTIFIER DESIGN
Bridge rectifier circuit changes AC

voltage into DC voltage. It consists of diodes D1, D2, D3 and D4 as shown.

RECTIFIER DESIGN
As calculated earlier Ip (rms) = 4.35 A.

NEAREST Std circuit diode available is for 5A rating

Thus diode used is 1N-5408. D1, D2, D3 and D4 are diode 5408.

INPUT CAPACITOR C5

INPUT CAPACITOR C5
Cin=
Po

x fac [(2 Vdc(min) )2 - ( Vdc(min))2 ]

Where is the attempted efficiency of the circuit,

taken as 90%. 2 is used for the waveform being sinusoidal.

INPUT CAPACITOR C5
Cin=
640

0.9 x 50 [(2 x 325 )2 - ( 325)2]

Cin= 134.64 x 10-6 F

= 134.64 F. C5 = 220 F. ( since only 110 F, 220 F avl)

MOSFET DESIGN
As calculated earlier, Ip = 6.16A.
So current across the MOSFET should be in excess of

6.16A. Also breakdown voltage > 325V, since our dc bus is at 325 V. After 325 V we assume that the is a faulty overvoltage at the input.

MOSFET DESIGN
Range of voltage as per design is 230V to 270V.
ie the voltage can exceed till a maximum value of

2702 = 381V. MOSFETs available are:

MOSFET having VDSS = 350V MOSFET having VDSS = 500V

Since MOSFET shouldnt breakdown under 381V So we have selected IRFP 460 having VDSS = 500V

MOSFET DESIGN
IRFP 460 has drain current Id =20A, which is more than 6.16A. Also RDS ON= 0.27 RDS ON is the channel resistance between drain and source in

ON state. It is also called the dynamic resistance. Power dissipation on ground.

I2 R = (6.16)2 x 0.27= 10.24W

For leakage inductance spikes which are sinusoidal in nature, which

cause a lot of unaccounted power loss, a multiplication factor of 2 is used. Thus power dissipation per MOSFET = 10.24 x 2 = 14.48W Since two MOSFETs are used, total power dissipated = 28.96W. Heat sink is selected keeping in mind the above value.

TRANSFORMER SELECTION

The mechanical size of a transformer depends on the

power to be transferred and on the operating frequency. Higher the frequency , smaller is the mechanical size. Transformer is designed as.
Core selection. No of primary turns Np . No of secondary turns Ns .

CORE OF TRANSFORMER
Material of the core is ferrite.
The transformer core is selected from the TDK EI data

book. Standard transformer selected ETD 39/20/13 as per the required parameters: Frequency of operation for SMPS= 100KHz. Pout = 640 W.

NUMBER OF PRIMARY TURNS

This number determines the magnetic flux density

within the core. Minimum number of primary turns are calculated as.

N1 min
Where : Ae : effective cross-section area of the core, this is where the flux density is maximum. B : is change of flux density.

(EFFECTIVE AREA OF CORE)

RATE OF CHANGE OF FLUX DENSITY

Calculation of maximum on time ie Ton (max) We have f= 100KHz. => T= 1/f = 1/100 x 103 = 10s. Now max value of Ton can be 50%. But at 50% operation core saturates, thus txr can become a short circuit, leading to a failure. So to avoid saturation a dead time of 10% is provided such that:
Ton Max = (50 10)% = 40% of T. So we get Ton Max = 4 s.

 N1 min

38 turns.

Secondary turns N2 can be calculated as:

N2 =

80 turns

SELECTION OF DIODES D9 AND D10

Both the diodes D9 and D10 are ultra fast diodes having

trr = 70ns. => fmax = 1/70 x 10 -3 =0.014 x 109 = 14 MHz. Such diodes are selected to cater for overshoot/undershoot in freq, since time pd for ringing freq is of the order of 125ns => fringing = 8MHz. Thus ultra fast diodes cater for overshoot/undershoot in freq.

125 ns

2.51 s

SOFT RECOVERY PARASITIC CAPACITANCE

SELECTION OF L2
L2 is powdered iron core output inductor.
This inductor is functional in continuous current

mode such that Current and thus the magnetic field in the inductive energy storage never reach zero. L2 is calculated as L2=
V0 x Toffmax 0.2 I0

200 x 6 x 10-6
0.2 x 3.2

= 1875 x 10-6 H

SELECTION OF CAPACITORS C8, C9, C10

Ripple of not more than 5% is accepted.
Vr = 2 dcC => 10= 2 x 100 x 103 x C f => C = 2 x 100 x 103 x 10 = 1.6 x 10-6 = 1.6F.
3.2 I 10.2