EE201

SEMICONDUCTOR DEVICES
NAMA PENSYARAH: TN. SYED ADNAN SYED OTHMAN
1/7/2013 1

CHAPTER 1
SEMICONDUCTOR
(N-type and P-type)
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Objectives:
1. 2.

Atomic structure

Insulators, conductors, semiconductor.

Semiconductor characteristic N-type and p-type semiconductor

3. 4.

Atomic Struktur

Every atom consist of:

i.

ii.

Electron - smallest and lightest particle - negative charge - move in high speed around nukleus Proton - 1800 times bigger than electron - positive charge

iii.

Neutron

Same size of proton No charge

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Atomic Structure

Nukleus
+ + +

Electron orbit

Hidrogen

electron

+
proton

Atomic Structure
Nukleus atom:

carbon 6 proton and 6 neutron cuprum 29 proton, 29 neutron Aluminium 13 proton, 13 neutron Silicon 14 proton, 14 neutron

Germanium 32 proton, 32 neutron

Atomic Structure

In the atom there is a maximum of seven layers of the orbit (shell) the layer is known as K, L, M, N, O, P and Q maximum number of electron in the orbit is determined by formula:

2 x n

n number of the
layer
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Maximum number of electrons:

layer K (1) layer L (2) layer M (3) layer N (4) layer O (5) layer P (6) layer Q (7) : 2n x 1 = : 2n x 2 = : 2n x 3 = : 2n x 4 = : 2n x 5 = : 2n x 6 = : 2n x 7 = 2 8 18 32 50 72 98
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Aluminium = 13 electron
Layer K = 2 electron
+13

layer L = 8 electron layer M = 3 electron

2 + 8 + 3 = 13

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 Outer layer of atom is called valence shell There is not more than 8 electrons valence in this layer Electron in this layer is called electron valence

Number of electron valence determine the electrical characteristic of the material.

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 Trivalence Atom . 3 electron valence

Indium, Boron dan Aluminium

Pentavalence Atom . 5 electron valence Antimony (Sb), arsenic (As) Neutral Atom :-

Number of proton = number of electron

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i.

Conductor

Materials that have a very low resistance and therefore pass current easily

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ii. Conductor characteristic

1 3 electron valence
1. Low resistance, current can easily flow 2. Atom is more tend to release its electron valence 3. This Electron can move from one to another atom freely .

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ii. Insulator
Materials that have a very high resistance and threfore oppose current

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ii. Insulator characteristic

5 8 elektron valens
1. Current cannot flow through 2. High resistance 3. Receives electrons from atomic valence of other atoms to fill the valence levels and make it stable and free of any electrical activity @ chemistry
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iii. Semiconductor
Neither They

a conductor nor a insulator

can be controlled to either increase their resistance and behave more like an insulator or
decrease

their resistance and behave more like a conductor

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iii. Semiconductor
Have 4 electron valence 1. Neither a conductor nor a insulator 2. not easily release or received electron valence to/from other atom

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Silicon dan Germanium

layer(K) = 2 x 1 = 2 layer(L)
14 32

2x4=8 Layer (M) 2 x 9 = 18

Layer (M) Layer Valens = 4 No.atom silikon = 14 2 + 8 + 4 = 14

Layer (N) Layer Valens = 4 No. atom Germanium = 32 2 + 8 + 18 + 4 = 32

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Covalent bond
When two or more similar semiconductor atoms are combined to form a solid element. They will share its 4 electron valence with its neighbouring atom.

Si

Si

Si

Si

Si

Si

Si

Si

Si

Covalent bond
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N type and P -type semiconductor characterisric

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N-type
when

Extra 1 electron

Silicon @ Germanium semiconductor is dopped with pentavalen (Arsenic) impurity, there is extra 1 electron This material is called N type

Si

Si

Si

Si

As

Si

Si

Si

Si

Covalent bond
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P type

When semiconductor Silicon or Germanium doped with trivalent impurities (indium), shortage of an electron. Hol exist, charged + ve This Semiconductor becomes more hole This material is called P type

Shortage of an electron

Si

Si

Si

Si

In

Si

Si

Si

Si

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P type characteristic
P type

Semiconductor

Figure 7

is dopped with impurities with 3 electron valence Current majority carrier is hole Current minority carrier is electron
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N type characteristic
N type
Semiconductor

Figure 6

is dopped with impurities with 5 electron valence Current majority carrier is electron Current minority carrier is hole
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P-N junction

Figure 5

P
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Depletion Region

Barrier Voltage
i.
Rajah 6

Germanium = 0.3V

ii.

Silicon = 0.7V
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P-N junction
What happen when junction builds up

Electron in the n type become attracted to fill the hole in the p type side. Crossing of electrons occurs from the N-type to the P-type

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P-N junction
What happen when junction builds up
This electron-Hole combination makes the atoms near the grafts to be neutral. After a while an area with no current carriers exists .

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P-N junction
What happen when junction builds up

Crossing of electrons will stop This area is called depletion region Only small resistance between the 2 combined material to form depletion region

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P-N junction
What happen when junction builds up

Potential difference between pn junction is known as barrier voltage. Barrier voltage :Germanium = 0.3V Silikon = 0.7V

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1.

Biasing Voltage
voltage supplied to p-n junction

2 types of biasing :i. ii. Forward biased Reversed biased

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1.

Biasing Voltage

i. Forward biased
Definition :negative source connected to n-type and positive source connected to p-type
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1.
i.
ii. iii.

Biasing Voltage
i. Forward Biased

Depletion region become thinner, smaller Resistance becomes low Current can pass through

N-type
Figure 7

P-type

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1.

Biasing Voltage
ii. Reverse Biased

Definition:N-type material receives positive voltage supply and p-type receives negative voltage supply

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1.
i. ii. iii.

Biasing Voltage
ii. Reverse Biased

Depletion region becomes wider Resistance becomes higher Current cannot pass through

N-type
Figure 8

P-type
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2.

Leakage Current

Minority current in the material. Exist when p-n combination receives reverse biased voltage Electrons inside p-type material will be pushed by biased voltage towards the junction and across it.

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2.

Leakage Current

Produce a very small of current flow. This current is called leakage voltage or reverse current The value depends on temperature . Smaller the temperature value, the current will be smaller too and vice versa.
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3.

Breakdown Voltage

If the combined p-n supplied with a very high reverse biased voltage, it will disturb the stability of covalent bond. Electrons will attracted to positive potential and become free as a current carrier

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3.

Breakdown Voltage

This evolved electrons would violate other bond. The result was a high value reverse current flow The voltage where the breakdown occurs is called breakdown voltage

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3.

Breakdown Voltage

The p-n juntion will burn The voltage is the maksimum voltage of the junction when reverse biased Voltan

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Contoh-contoh soalan
1. Lukiskan rajah struktur atom bagi : a. Germanium mempunyai no atom 32. b. Silikon yang mempunyai no atom 14. Serta nyatakan sifat bahan-bahan tersebut . Apakah Ikatan Kovelen dan lukiskan rajah yang menunjukkan Ikatan kovelen bagi Germanium

2.

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Contoh-contoh soalan
3. 4. Berikan 4 faktor yang membolehkan elektron terbebas dari ikatan Kovelen Untuk membolehkan bahan jenis N dan P terhasil, semikonduktor tulen perlu diserapkan dengan bendasing. Apakah bendasing itu dan terangkan setiap satu dan berikan contoh rajah yang menerangkan semikonduktor tulen yang diserapkan dengan salah satu bendasing

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Contoh-contoh soalan
5. 6. Nyatakan pembawa arus majoriti dan minoriti bagi bahan jenis N dan P. Lukiskan dan jelaskan secara ringkas maksud voltan pincang hadapan dan voltan pincang songsang

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SEKIAN TERIMA KASIH

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