MICROWAVE DEVICES

IRINEO P. QUINTO ECE / REE

MICROWAVE TUBES

KLYSTRON AMPLIFIER AMPLIFIES MICROWAVE SIGNAL USING VELOCITY MODULATION FORMS HIGH VELOCITY ELECTRONS TYPICAL EFFICIENCY: 3045%; MAX=70% 0.5 6.4 GHz

BUNCHER CAVITY

CATCHER CAVITY

DRIFT SPACE

MICROWAVE TUBES

REFLEX KLYSTRON

LOW POWER, LOW EFFICIENCY MICROWAVE OSCILLATOR 4-200 GHz <10% EFFICIENCY TYP Po=100 mW

OUTPUT REPELLER

ANODE

T = n + 3/4 T transit time n any integer

MAGNETRON

A DIODE WHICH USES THE INTERACTION OF MAGNETIC AND ELECTRIC FIELDS IN A COMPLEX CAVITY TO PROVIDE OSCILLATIONS 10 MW UHF; 2MW X-BAND; 80 kW 95 GHz EFFICIENCY OF 5060%

TYPES OF:

HOLE & SLOT VANE RISING SUN COAXIAL

MICROWAVE TUBES

TRAVELING WAVE TUBE (TWT)

CROSS FIELD AMPLIFIER (CFA)

THE INTERACTION BETWEEN THE BEAM AND THE RF FIELD IS CONTINUOUS CAN BE USED AS A LOWLEVEL, LOW NOISE AMPLIFIER OR AS A HIGH POWER ONE, EITHER CW OR PULSED 2 16 GHz, 30-45 dB GAIN, F=4-10 dB, 10-100 mW CW 1-100 GHz, UP TO 10 kW, 25-35% effy PULSED 2-40 GHz,1-250 kW

CROSS BETWEEN THE TWT & MAGNETRON PULSED TYPE 1-18 GHz, 5MW UHF, 70%; 1 MW X BAND, 55%

BACKWARD WAVE OSCILLATOR (BWO)

SHORTER & THICKER TWT MICROWAVE CW OSCILLATOR 1-1000 GHz

SEMICONDUCTOR MICROWAVE DEVICES

TRANSISTOR

PARAMETRIC AMPLIFIER

2-4 GHz, 9W, 12-8 dB 29.5-32.5 dB at 4-6 GHz, 15 mW FET G=10dB, 9-15 GHz, F=7-14 dB USES A DEVICE WHOSE REACTANCE VARIES SUCH THAT AMPLIFICATION RESULTS

GUNN DIODE

WORKS ON THE PRINCIPLE OF TRANSFERRED ELECTRON EFFECT MADE WITH GaAs AND InP CW 4-75 GHz (1.5W 50 mW), 12-2% (TYP EFFY: 2.5-5%)

SEMICONDUCTOR MICROWAVE DEVICES

IMPACT AVALANCHE & TRANSIT TIME DIODE (IMPATT)

OTHER MICROWAVE DIODES

MADE OF Si OR GaAs WORKS LIKE TUNNEL DIODE / GUNN DIODE MADE OF 4 LAYERS

TRAPPED PLASMA AVALANCHE TRIGERRED TRANSIT TIME DIODE (TRAPATT)

TUNNEL VARACTOR SCHOTTKY BARRIER PIN

PULSED 600 W, 1 GHz, 75% (TYP:30%)

WAVEGUIDE

A HOLLOW METALLIC TUBE USED TO PROPAGATE SIGNALS TYPICALLY FROM 3100 GHz BAND TRANSMITS MULTIPLE SIGNAL OVER THE SAME FREQUENCY BUT IN DIFFERENT MODES

ADVANTAGES

EASIER TO FABRICATE THAN COAXIAL LINE NO FLASHOVER BETTER POWER HANDLING CAPABILITY (10X AS MUCH AS COAXIAL LINE) LOWER POWER LOSS HIGHER OPERATING FREQUENCY

BASIC TYPES OF WAVEGUIDES

RECTANGULAR

MODES OF PROPAGATION TRANSVERSE ELECTRIC (TEmn) 0R H-MODE Zo = 120 / o = 2 / 1 (/o)2

(m/a)2 + (n/b)2

Vg = C sin Vp = C/sin VgVp = C2

TRANSVERSE MAGNETIC (TM) 0R E-MODE Zo = 120 1 (/o)2

DOMINANT MODE

THE MODE YIELDING THE LONGEST CUT-OFF WAVELENGTH

& TM11 - RECTANGULAR & TM01 - CIRCULAR

CIRCULAR WAVEGUIDE

TE10 TE11

o = 2r / (KR) - CIRCULAR

BIGGER CROSS SECTION THAN RECTANGULAR POSSIBILITY OF PLANE OF POLARIZATION TO ROTATE DUE TO DISCONTINUITIES OR ROUGHNESS EASIER TO MANUFACTURE THAN RECTANGULAR EASIER TO JOIN TOGETHER

OTHER MICROWAVE DEVICES

RIDGED WAVEGUIDE

SINGLE OR DOUBLE RIDGE TYPE LOWERS THE VALUE OF THE CUT-OFF WAVELENGTH, HENCE DECREASES THE GUIDES SIZE INCREASES THE USEFUL FREQUENCY RANGE REDUCE THE PHASE VELOCITY HIGHER LOSS THAN ORDINARY RECTANGULAR WAVEGUIDE

FLEXIBLE WAVEGUIDES (ELLIPTICAL WAVEGUIDE)

MAYBE BENDED, TWISTED OR STRETCH DOES NOT REQUIRE JOINS AND SEPARATE BENDS ALMOST THE SAME POWER HANDLING ABILITY, ATTENUATION AND SWR THAN RECTANGULAR

OTHER MICROWAVE DEVICES

FLANGE

USED TO JOIN WAVEGUIDES TOGETHER TO ENSURE A SMOOTH MECHANICAL JUNCTION (LOW LEAKAGE & REFLECTIONS)

TAPER & TWIST SECTIONS

JOIN WAVEGUIDES WITH DIFFERENT DIMENSIONS OR CROSS SECTIONAL SHAPES H-PLANE T (SHUNT) E-PLANE T (SERIES) HYBRID / MAGIC T

JUNCTIONS

OTHER MICROWAVE DEVICES

MATCHING SECTIONS

IRIS (CAPACITIVE / INDUCTIVE) TUNING SCREW

APPEARS CAPACITIVE LESS THAN /4 AND INDUCTIVE IF MORE THAN /4

SLIDE SCREW TUNER ATTENUATOR SLOTTED LINE SWR METER ISOLATOR

CIRCULATOR

MADE OF FERRITE SIMILAR TO ISOLATOR

POINT CONTACT DIODE

USED AS MIXER/DETECTOR

PROBLEMS

WHAT WILL BE THE CUTOFF WAVELENGTH FOR THE DOMINANT MODE IN RECTANGULAR WAVEGUIDE WHOSE BREADTH IS 10 cm? FOR A 2.5 GHz SIGNAL PROPAGATED IN THIS GUIDE IN THE DOMINANT MODE, CALCULATE THE GUIDE WAVELENGTH, THE GROUP AND PHASE VELOCITIES AND THE CHARACTERISTIC WAVE IMPEDANCE?

IT IS NECESSARY TO PROPAGATE A 10 GHz SIGNAL IN A GUIDE WHOSE WALL SEPARATION IS 6 cm. WHAT IS THE GREATEST NUMBER OF HALFWAVES OF ELECTRIC FIELD INTENSITY WHICH IT WILL BE POSSIBLE TO ESTABLISH BETWEEN THE TWO WALLS?