Вы находитесь на странице: 1из 20

C

Kristin Ackerson, Virginia Tech EE Spring 2002

Table of Contents
The Bipolar Junction Transistor_______________________________slide 3 BJT Relationships Equations________________________________slide 4 DC and DC _____________________________________________slides 5 BJT Example_______________________________________________slide 6 BJT Transconductance Curve_________________________________slide 7 Modes of Operation_________________________________________slide 8 Three Types of BJT Biasing__________________________________slide 9 Common Base______________________slide 10-11

Common Emitter_____________________slide 12 Common Collector___________________slide 13 Eber-Moll Model__________________________________________slides 14-15 Small Signal BJT Equivalent Circuit__________________________slides 16 The Early Effect___________________________________________slide 17 Early Effect Example_______________________________________slide 18 Breakdown Voltage________________________________________slide 19 Sources__________________________________________________slide 20
Kristin Ackerson, Virginia Tech EE Spring 2002

The BJT Bipolar Junction Transistor


Note: It will be very helpful to go through the Analog Electronics Diodes Tutorial to get information on doping, n-type and p-type materials.

The Two Types of BJT Transistors: npn pnp


E n p n C B B
Schematic Symbol

p C

Cross Section

Cross Section

B B
Schematic Symbol

Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015

Kristin Ackerson, Virginia Tech EE Spring 2002

BJT Relationships - Equations


IE E VBE + B IB + VCE + IC C VBC E + VEB B IE + VEC IC C + IB VCB

npn
IE = IB + IC

pnp
IE = IB + IC

VCE = -VBC + VBE

VEC = VEB - VCB

Note: The equations seen above are for the transistor, not the circuit.
Kristin Ackerson, Virginia Tech EE Spring 2002

DC and DC
= Common-emitter current gain = Common-base current gain = IC = IC

IB

IE

The relationships between the two parameters are:

+1

1-

Note: and are sometimes referred to as dc and dc because the relationships being dealt with in the BJT are DC.
Kristin Ackerson, Virginia Tech EE Spring 2002

BJT Example
Using Common-Base NPN Circuit Configuration C Given: IB = 50 A , IC = 1 mA
VCB B VBE
+ _ + _

IC IB

Find:

IE , , and

Solution: IE E IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA

= IC / IB = 1 mA / 0.05 mA = 20
= IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 = 0.95238 +1 21
Kristin Ackerson, Virginia Tech EE Spring 2002

BJT Transconductance Curve


Typical NPN Transistor 1
Collector Current: IC
8 mA

IC = IES eVBE/VT
Transconductance: (slope of the curve)

6 mA

gm = IC / VBE
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K)

4 mA

2 mA

= the emission coefficient and is usually ~1


0.7 V

VBE
Kristin Ackerson, Virginia Tech EE Spring 2002

Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat

Saturation: Barrier potential of the junctions cancel each other out


causing a virtual short

Cutoff:

Current reduced to zero Ideal transistor behaves like an open switch

* Note: There is also a mode of operation called inverse active, but it is rarely used.

Kristin Ackerson, Virginia Tech EE Spring 2002

Three Types of BJT Biasing


Biasing the transistor refers to applying voltage to get the transistor to achieve certain operating conditions.

Common-Base Biasing (CB) :

input

= VEB & IE

output = VCB & IC Common-Emitter Biasing (CE): input = VBE & IB

output = VCE & IC Common-Collector Biasing (CC): input = VBC & IB

output = VEC & IE

Kristin Ackerson, Virginia Tech EE Spring 2002

Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC Saturation Region Active Region IE

Cutoff IE = 0
VCB
Kristin Ackerson, Virginia Tech EE Spring 2002

Common-Base
Circuit Diagram: NPN Transistor C IC

VCE

IE

VCB The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor. Region of Operation IC VCE VBE IB
+ _

VBE

VCB
VCB

VBE
C-B Bias E-B Bias

Active Saturation
Cutoff

IB Max
~0

=VBE+VCE ~0.7V ~0V

0V

Rev. Fwd.

~0.7V -0.7V<VCE<0 Fwd. Fwd.


0V Rev. None /Rev.

=VBE+VCE 0V

Kristin Ackerson, Virginia Tech EE Spring 2002

+ _

Common-Emitter
Circuit Diagram VCE IC
Collector-Current Curves IC

VC
C

+ _

IB

Active Region

Region of Description Operation Active Small base current controls a large collector current

IB

VCE
Saturation Region Cutoff Region IB = 0

Saturation VCE(sat) ~ 0.2V, VCE increases with IC


Cutoff Achieved by reducing IB to 0, Ideally, IC will also equal 0.

Kristin Ackerson, Virginia Tech EE Spring 2002

Common-Collector
Emitter-Current Curves The CommonCollector biasing circuit is basically equivalent to the common-emitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE

IE

Active Region

IB

VCE
Saturation Region Cutoff Region IB = 0
Kristin Ackerson, Virginia Tech EE Spring 2002

Eber-Moll BJT Model


The Eber-Moll Model for BJTs is fairly complex, but it is valid in all regions of BJT operation. The circuit diagram below shows all the components of the Eber-Moll Model:

IE

IC

RIC

RIE

IF IB B

IR

Kristin Ackerson, Virginia Tech EE Spring 2002

Eber-Moll BJT Model


R = Common-base current gain (in forward active mode) F = Common-base current gain (in inverse active mode) IES = Reverse-Saturation Current of B-E Junction ICS = Reverse-Saturation Current of B-C Junction

IC = FIF IR IE = IF - RIR

IB = IE - IC

IF = IES [exp(qVBE/kT) 1]

IR = IC [exp(qVBC/kT) 1]

If IES & ICS are not given, they can be determined using various BJT parameters.
Kristin Ackerson, Virginia Tech EE Spring 2002

Small Signal BJT Equivalent Circuit


The small-signal model can be used when the BJT is in the active region. The small-signal active-region model for a CB circuit is shown below:
iB B r iB iC

r = ( + 1) * VT IE
@ = 1 and T = 25C

iE

E
Recall:

r = ( + 1) * 0.026 IE

= IC / IB

Kristin Ackerson, Virginia Tech EE Spring 2002

The Early Effect (Early Voltage)


Note: Common-Emitter Configuration

IC

IB

-VA Green = Ideal IC Orange = Actual IC (IC) IC = IC VCE + 1 VA

VCE

Kristin Ackerson, Virginia Tech EE Spring 2002

Early Effect Example


Given: The common-emitter circuit below with IB = 25A, VCC = 15V, = 100 and VA = 80. Find: a) The ideal collector current

b) The actual collector current


Circuit Diagram IC VCE a) VCC
+ _

= 100 = IC/IB IC = 100 * IB = 100 * (25x10-6 A) IC = 2.5 mA

IB

b)

IC = IC

VCE + 1 VA

= 2.5x10-3

15 + 1 80

= 2.96 mA

IC = 2.96 mA
Kristin Ackerson, Virginia Tech EE Spring 2002

Breakdown Voltage
The maximum voltage that the BJT can withstand.

BVCEO =

The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts. The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts. Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
Kristin Ackerson, Virginia Tech EE Spring 2002

BVCBO =

Sources
Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New Jersey: 2001. (pp 84-153)
1

Figure 3.7, Transconductance curve for a typical npn transistor, pg 90.

Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and Simulation. Plenum Press, New York: 1998. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles. McGraw-Hill, Boston: 1997. (pp 351-409)

Web Sites

http://www.infoplease.com/ce6/sci/A0861609.html

Kristin Ackerson, Virginia Tech EE Spring 2002

Вам также может понравиться