A PROJECT REPORT ON SUBMITTED TO CH.

CHARAN SINGH UNIVERSITY, MEERUT FOR THE AWARD OF THE DEGREE OF MASTER OF PHILOSOPHY IN PHYSICS SUPERVISOR DR. BEER PAL SINGH CANDIDATE AMIT TOMER

DEPARTMENT OF PHYSICS CH. CHARAN SINGH UNIVERSITY, MEERUT JUNE-2010

1.THIN FILM 2.THICK FILM 3.THIN FILM SCIENCE a. Fabrication b. Characterization c. Applications 4.APPLICATIONS OF THIN FILM

PVD we part from a solid material converted to vapor through heating (evaporation) or energetic ion bombardment. The material in form of vapor finally condeses on the substrate surface as a thin film.

CVD we part directly from gases (sometimes vapor originating from a liquid phase) which react and give place to a new product that condenses as a thin film on the substrate.

ZnO is an important multifunctional material which has received great attention during the last few years due to their unique applications in microelectronic and optoelectronic devices, and for self-assembled growth of three-dimensional nanoscale systems. Zinc oxide having a direct band gap of 3.37 eV and an exciton binding energy (60 eV) higher than those of ZnS (20eV) and GaN (21eV), is of interest for various high tech applications,such as optical devices, solar cells ,piezoelectric devices ,varistors surface acoustic wave (SAW) devices, and gas sensors . (a) its simplicity and low cost, (b) its capability to achieve large area coatings, (c) its low

Group II-VI

Usually p-type, except ZnTe which is n-type

II-VI semiconductors

Cadmium selenide (CdSe) (1.74 eV, direct band gap) Cadmium sulfide (CdS) (2.42 eV, direct band gap, common for quantum dots) Cadmium telluride (CdTe) (1.49 eV) Zinc oxide (ZnO) (3.37 eV, direct band gap) Zinc selenide (ZnSe) (2.7 eV) Zinc sulfide (ZnS) (3.68 eV) Zinc telluride (ZnTe) (2.25 eV)

II-VI ternary alloy semiconductors

Cadmium zinc telluride (CdZnTe, CZT) (1.4-2.2 eV, direct band gap) Mercury cadmium telluride (HgCdTe) Mercury zinc telluride (HgZnTe) Mercury zinc selenide (HgZnSe)

RUBBER ACTIVATION ACCELERATION BIOCHEMICAL ACTIVITY DIELECTRIC STRENGTH HEAT STABILIZATION LATEX GELATION LIGHT STABILIZATIONPIGME NTATION REINFORCEMENT

RUBBER - METAL BONDING TACK RETPLASTICS CERAMICS PHARMACEUTICAL INDUSTRY COSMETICS ADHESIVES, MASTICS, SEALANTS PHOTOCOPYING LUBRICANTS PAINTS

1.Physical processes 2.Chemical processes 3.Physical-chemical process (Glow-discharge process)

1.

2. 3. 4. 5. 6. 7.

Thermal evaporation (Physical vapor Deposition) Resistive Heating Evaporation Electron Beam Evaporation Laser Evaporation Flash Evaporation Arc Evaporation The Physics and Chemistry of Evaporation

When a volatile compound to be deposited on the substrate is vaporized and vapor is thermally decomposed with other gases, the vapor phase react chemically near or on a substrate surface to form a solid product which deposit atomistically (atom by atom) on the substrate. This is called CVD 1. Atmospheric pressure CVD (APCVD) 2.Low pressure CVD (LPCVD) 3.Metal Organic CVD (MOCVD) 4.Photo - enhanced CVD (PHCVD) 5.Laser induced CVD (PCVD) and Electron enhanced CVD .

Rough vacuum 760 to 0.1 torr

Medium vacuum 0.1 to 10-4 torr

High vacuum 10-4 to 10-8 torr Ultra High vacuum 10-8 torr

Pump Type

Pumping Capacity

Preferred

Backing

Pump Diffusion Pump Unlimited Rotary Oil

Hook and Claws Turbo pump Getter-ion pump Getter Pump Cryopump Limited Limited Limited molecular Unlimited Rotary Oil, Hook and Claws Sorption Sorption Any

Screen printing is a printing technique that uses a woven mesh to support an ink-blocking stencil. The attached stencil forms open areas of mesh that transfer ink as a sharp-edged image onto a substrate. A roller or squeegee is moved across the screen stencil, forcing or pumping ink past the threads of the woven mesh in the open areas. A pattern is photo graphically defined on a stainless steel screen by means of an emulsion layer. A paste of the material to be screen printed is pressed through the screen by means of a squeegee.

Advantage of screen printing is that large quantities can be produced rapidly with new automatic presses, up to 1800 shirts in 1 hour. The current speed loading record is 1805 shirts printed in one hour, documented on 18 February 2005. Maddie Sikorski of the New Buffalo Shirt Factory in Clarence, New York (USA) set this record at the Image Wear Expo in Orlando, Florida, USA, using a 12-colour M&R Formula Press and an M&R Passport Automatic Textile Unloader. The world speed record represents a speed that is over four times the typical average speed for manual loading of shirts for automated screen printing.

Plastisol Water-Based inks PVC/ Phalate Free Discharge inks Glitter/Shimmer Metallic Expanding ink (puff) Gloss Nylobond Mirrored silver

1.Screen printing is arguably the most versatile of all printing processes 2.It can be used to print on a wide variety of substrates, including paper, paperboard, plastics, glass, metals, fabrics, and many other materials. 3.greater thickness of the ink can be applied to the substrate than is possible with other printing techniques 4.The advantage of screen printing over other print processes is that the press can print on substrates of any shape, thickness and size.

It is very important to thoroughly characterize the films, for making them useful in device fabrication. There are following techniques for the characterization of the films 1. Optical properties 2. Structural properties 3. Electrical properties

1.Optical Absorption In the absorption process a photon of known energy excites an electron from a lower to a higher energy state. In other manner we can say that absorption is also resulted from interaction between atoms and electromagnetic radiations. 2.Optical transmission overall transmission is given by, T = (1-R)2 exp(-t) = (1-R)2 exp(-2(-t) if product t is large then we can write, T = (1-R)2 exp(-t). Determination of optical constants: the optical behaviour of a material is generally used to determine the optical constants n (refractive index)

X-ray Diffraction (XRD) The diffraction

of x-rays by the crystal lattice is known as x-ray diffraction .The phenomenon of x-ray diffraction can be considered as a reflection of x-rays from the crystallographic plane of the material and is governed by Bragg s equation

2d sin n

The scanning electron microscope (SEM) is a type of electron microscope that images the sample surface by scanning it with a high-energy beam of electrons in a raster scan pattern. The electrons interact with the atoms that make up the sample producing signals that contain information about the sample's surface topography, composition and other properties such as electrical conductivity

A Commercially available ZnO powder with 99.99% purity was used as the starting material. Slurry consisting of ZnO powder, 10% weight of ZnCl2 and an appropriate amount of ethylene glycol were thoroughly mixed. ZnCl2 was used as an adhesive and ethylene glycol as a binder. The paste thus prepared was screen printed on ultra-clean glass substrates. It was then cleaned by embry powder, acetone and finally washed with distilled water. The samples thus prepared were dried at 120C for 4 hours in the open air.

Optical properties:- Reflection spectra of sintered ZnO films is taken at room temperature with the help of a Hitachi Spectrophotometer model U-3400.In this model the prism/grating double monochromatic system is used, the lenses used in conventional monochromator are replaced with mirrors. So, the image deviation due to chromatic aberration is eliminated. Its wavelength range is 187- 2600nm.The lead sulphide detector (PbS) is used for the detection of infrared rays. The visible wavelength light source is long life WL lamp. The optical band gaps of these films are determined with the help of reflection spectra According to Tauc relation, the absorption coefficient for direct band gap material is given by h = A (h - Eg)n , Where h is photon energy, A is constant, Eg is the band gap, and n is equal for direct band gap material

0.2 0.15

R%

0.1 0.05 0 350 LAMDA (nm)

GRAPH BETWEEN LAMDA(nm) Vs R%

450

100 80 60

(h)2
40 20 0 3 3.2
hv(eV) GRAPH BETWEEN hv (eV) Vs (h)2

3.4

3.6

6000

(101)

5000

(100)

Counts

4000

(002)
3000

(110) (102) (220) (112) (200) (201)

2000

1000 30 40 50 60 70

2Theta

6000 5500 5000 4500 4000 3500

101

100 002 110

Counts

3000 2500 2000 1500 1000 500 0 30 40 50

102

220

112 200 201

60

70

2Theta

Surface morphology of ZnO films deposited on glass substrate was examined by scanning electron microscope(SEM).The scanning electron micrograph of deposited ZnO film are shown in fig. SEM analysis suggests that the surface of ZnO is rough and grains are distributed uniformly. The Scanning electron micrograph of sintered deposited ZnO film at sintered 425C 450C respectively.

I have deposited zinc oxide thin films by screen printing using sintering technology. and I have calculated the energy band Gap of prepared ZnO thin films was calculated with the help of Reflection spectra which is comes out by the Tauc relation. The Energy band gap of ZnO samples is 3.22 eV and I have done the XRD of ZnO thin films. The nature of the Band gap of ZnO comes out by Reflection spectra .almost all the II-VI compounds are direct band gap semi conductors according to Tauc relation

In Future we will deposit the thin film of ZnO by Vacuum Deposition technique Using Vacuum coating unit. In this technique we will use Quartz substrate in place of Glass substrate. After that we will calculate the Optical Constant, Electric property, Surface morphology structure, nature of Band gap and particle size etc. in ZnO thin film.