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INTRODUCTION
The Insulated Gate Bipolar Transistor (IGBT) was first demonstrated by
Very low driving losses: High input impedance. 2) Insignificant ON state or Forward conduction losses. 3) Minimal OFF state or Reverse blocking losses. 4) Extremely low switching losses: Ton and Toff to approach zero.
ON state voltage drop. GTO, another competing device, but requires high gate drive current. (750A for 4000V, 3000A). MOSFET being unipolar, ON state resistance increases with D-S voltage capability. Switching losses also increase due to inherent reverse diode. With the above considerations, we need a device which will optimize all the above parameters.
CONSTRUCTION
Only major difference in MOSFET and
IGBT is p+ injecting layer. This layer forms a pn junction and injects minority carriers. N-type drain region has two doping levels viz. lightly and highly doped. Doping level and width of this layer sets the forward blocking voltage. This is a PUNCH-THROUGH design: n+ region (buffer layer). Gives lower ON state drop compared to NPT at the cost of lower reverse BD voltage for device. The Gate in insulated from the body by SiO2 to give high input impedance.
The
p-type body region: considerably different from MOSFET to beat the latch up action of parasitic (p-n-p-n) thyristor. Once it latches up, gate control over the IGBT is lost which is undesirable. Sintered Aluminium metallization and deep p+ diffusion shorts Emitter and Base of NPN transistor. This is done to limit the sum of gains of the 2 transistors below unity. Pseudo-Darlington Configuration. PNP being in the final stage of this configuration, is never allowed to saturate. As saturation avoided, reverse recovery charge and time is reduced. This in turn makes the switch off process faster than BJT. Consequently, the switching frequency is also higher.
PRINCIPLE OF OPERATION
formed.
This layer shorts the Emitter and the N- (drain drift) region and electron current
N type drain drift region acts as a base for the output PNP
transistor.
The thickness and doping level of this layer will set the current
flows via the MOSFET and not via the PNP transistor.
This is done, to reduce the voltage drop across the body spreading
resistance.
This, again, in turn is done to eliminate the possibility of the
TYPES OF IGBTs
V-I CHARACTERISTICS
MATLAB MODEL
For Vg-e = 8V
For Vg-e = 9V
Comparison
S.NO. 1 2
3
Vg-e (V) 8 9 10
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