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Titularul de disciplin:Prof. Dr. Ing. Dan Dasclu Cerc.st. gr. I, dr. Ing. Mircea Dragoman Dr. Emil Mihai Pavelescu (IMT). mircea.dragoman@imt.ro
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Litigrafia cu atomi Litografia Laser
If a quantum well (or another confined structure such as a quantum wire or a quantum dot) is placed in close proximity to another quantum well (quantum wire or quantum dot), the electrons in one confined structure can interact or not with the electrons in the other depending on the height and width of the barrier that separates the two structures.
In the first case, the quantum wells (quantum wires or quantum dots) are called coupled and the electron wavefunction extends throughout the entire structure, while in the second case we deal with a succession of noninteracting quantum wells (quantum wires or quantum dots), for which the electrons localized in one confined structure can be transferred in the other only through sequential tunneling. Coupling of nanoscale structures is possible since, unlike in wells surrounded by infinite barriers, in finite barrier regions the electron wavefunction decays exponentially, and hence the envelope electron wavefunctions in adjacent wells can overlap if the barrier that separates them is sufficiently thin.
Electron wavefunction splitting into a symmetric and an antisymmetric part when two identical quantum wells are brought in close proximity.
When several identical quantum wells are grown in a periodic structure, with a period L, and are sufficiently close to one another so that they become coupled, the delocalized electron wavefunction feels a periodical energy potential with a period L having a band energy of discrete levels, such that each well contributes one state in each band. For structures with many periods and sufficiently thin barriers (almost) continuous permitted and forbidden electron energy bands develop similar to bulk materials, in which the periodicity is that of the crystalline lattice. This artificial periodic structure, which is an artificial lattice with a controllable cell, is called a superlattice. The positions and widths of the electron energy bands are determined by the form of the periodic potential and therefore can be engineered using advanced semiconductor growth techniques.
e2 / C
e2 / 2C
in metallic islands where C is the capacitance between the island and the environment corresponds to an energy gap of
e2 / C
>>
k BT
electron tunneling into a metallic island in the presence of Coulomb blockade is only possible when a sufficiently large applied bias,
V e/C
At an electron can tunnel in the island from one lead, the Fermi energy in the island raises again by e2/C and further tunneling is forbidden by the occurrence of a new energy gap, unless the bias increases to V> 3e/C or the extra electron in the island tunnels out, into the other lead
Si IS BACK!!!!!!!!!!!!!!!!!!!!!!