Modeling of switches

+N
+N +N

R on R 0 ff

-N -N

switch

Three types of switches permitted in SPICE are

Voltage-controlled switches
Current controlled switches
Time-dependent switches
 Diode Model
A
A
R s
R s

++ + + ++
VD
R D C D
V D C D

_
_

R s

++ K K
+
V D •
Static diode model with reverse biased condition (Diode surrent which depends on its voltage is represented by a current source.

_
• Rs is the series resistance and is due to the resistance of semi
conductor is depended on doping

+ R s

V D

The capacitance CD is a non linear function of the diode voltage and is equal to
CD=dqd/ dvD where qd is the depletion –layer charge.
• PSPICE model statement for diode
• .MODEL DNAME D(P1=V1 P2=V2 …
PN=VN) Fv

• For e.g.,
• Reverse breakdown voltage BV=1200
• Reverse breakdown current IBV=13mA
• Instantaneous voltagev
F =1V iat =150A
F

• Reverse recovery charge Qrr =194μC at

IFM =200A
  VD 
I D I S  e V T 
= n − 1
 
 1(25.8*10^
1

150 = I S  e −3) − 1

 
I S = 2.2E − 15 A
So if the diode name is DMOD, the transit time

τ T
= Qrr/IFM= 194μC /200A=1μsec

Assuming CJO =2pf, VT is the thermal voltage.

The PSPICE model statement is .MODEL DNAME D(P1=V1 P2=V2 …
PN=VN)

.MODEL DMOD D (IS=2.22E-15 BV=1200 IBV=13E-3 CJO=2PF

TT=1US)
• Switching elements can be implemented
using a transistor and diode. Why?
• How to realize semiconductor switches in
general?
• Switch implementation :
• depends on the power processing
function being performed.
 Requirements of switches

• Switches of Inverters and cycloconverters:

• Require compicated implementations than
those of dc-dc converters.
• Behavior of switches:
• Semi conductor power devices behave as
single pole single throw switches.
 How an ideal switch can be realized
using semi conductor devices ?
• It depends on the polarity of the voltage that the devices must block in the off state,
• On the polarity of the current that the devices
must conduct in the on state.
• If the current and blocking voltage lie in a single quadrant of the plane , then the switch can be
implemented using a transistor or a diode eg., switches in dc-dc converters.
• In inverter circuits, two-quadrant switches are required. The output current is ac, and hence some times
+ve and some times –ve.The semi-conductor switch realization is more complicated.
• A two-quadrant SPST switch can be realized using a transistor and diode.
• There could be a case where the switch current is always +ve, but the blocking voltage is ac.
• The above arrangement can be constructed using a different arrangement of a transistor and diode.
• Cyclo converters require four-quadrant switches, which are capable of blocking ac voltages and
conducting ac currents.
• The synchronous rectifier examined reveals:
• The need for reverse-conducting capability of the metal oxide semi conductor field effect
transistor(MOSFET) allows it to be used where a diode would normally be required.
• Majority carrier devices including the Mosfet and Schottky diode, exhibit very fast switching times,and
hence are preferred when the off state voltage levels are not too high.
• Minority carrier devices (BJT,IGBT) thyristors (MOS controlled thyristor )MCT exhibit high break down
voltages with low forward voltage drops, at the expense of reduced switching speeds