Transistor/switch/amplifier a 3 terminal device

Source Incoherent Light Coherent Light Gain medium Vein Artery Valve

Gate

Drain

Dam

Laser

Heart

Emitter

Collector

Ion Channel

Base

BJT

MOSFET

Axonal conduction
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All of these share a feature with

Output current can toggle between large and small (Switching Digital logic; create 0s and 1s) Small change in valve (3rd terminal) creates Large change in output between 1st and 2nd terminal

(Amplification Analog applications; Turn 0.5 50)

Example: BJT common emitter characteristics

Gain = 300

http://www.computerhistory.org/semiconductor/timeline.html#1940s

Aim of this chapter

How can we get Gain? What is the structure of the device to get gain? What is the equation for gain? How can we use this equation to maximize gain? How can we model this device as a circuit element? What are its AC characteristics and speed?

Recall p-n junction

P W N N W + P

Vappl > 0
Forward bias, + on P, - on N (Shrink W, Vbi) Allow holes to jump over barrier into N region as minority carriers

Vappl < 0
Reverse bias, + on N, - on P (Expand W, Vbi) Remove holes and electrons away from depletion region

So if we combine these by fusing their terminals

P W + -

N
W +

Vappl > 0

Vappl < 0

Holes from P region (Emitter) of 1st PN junction driven by FB of 1st PN junction into central N region (Base) Driven by RB of 2nd PN junction from Base into P region of 2nd junction (Collector) 1st region FB, 2nd RB If we want to worry about holes alone, need P+ on 1st region For holes to be removed by collector, base region must be thin

Bipolar Junction Transistors: Basics

+ IC

IE

+ IB

IE = I B + I C

(KCL)

VEC = VEB + VBC (KVL)

BJT configurations

GAIN CONFIG

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Bipolar Junction Transistors: Basics

+ IC

IE

+ IB

VEB >-VBC > 0 VEC > 0 but small IE > -IC > 0 IB > 0

VEB, VBC > 0 VEC >> 0 IE, I C > 0 IB > 0

VEB < 0, VBC > 0 VEC > 0 IE < 0, IC > 0 IB > 0 but small

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Bipolar Junction Transistors: Basics

Bias Mode

E-B Junction

C-B Junction

Saturation

Forward

Forward

Active Inverted Cutoff

Forward Reverse Reverse

Reverse Forward Reverse

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BJT Fabrication

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PNP BJT Electrostatics

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PNP BJT Electrostatics

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NPN Transistor Band Diagram: Equilibrium

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PNP Transistor Active Bias Mode

VEB > 0 VCB > 0 Few recombine in the base

Collector Fields drive holes far away where they cant return thermionically Large injection of Holes Most holes diffuse to collector

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Forward Active minority carrier distribution

P+

pB(x) nE(x) nE0 pB0 nC(x) nC0

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PNP Physical Currents

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PNP transistor amplifier action

IN (small)

OUT (large)

Clearly this works in common emitter configuration

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Emitter Injection Efficiency - PNP

IE E

IEp IEn
IB

ICp ICn

IC C

IEp IEp IE IEp IEn

Can we make the emitter see holes alone?

0 1

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Base Transport Factor

IE E

IEp IEn
IB

ICp ICn

IC C

ICp T IEp

0 T 1

Can all injected holes make it to the collector?

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Common Base DC current gain - PNP

Common Base Active Bias mode:

IC = DCIE + ICB0
ICp = TIEp = TIE IC = TIE + ICn

DC = T

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Common Emitter DC current gain - PNP

Common Emitter Active Bias mode:

IE = bDCIB + ICE0
IC = DCIE + ICB0

bDC = DC /(1-DC)
GAIN !!

= DC(IC + IB) + ICB0

IB
IC

IC = DCIB + ICB0 1-DC

IE
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Common Emitter DC current gain - PNP

b dc

T 1 T

Thin base will make T 1 Highly doped P region will make 1

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PNP BJT Common Emitter Characteristic

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