PN-Junction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than the Cathode --- Current flows in the direction of the arrow in the symbol. Reverse Bias --- External battery makes the Cathode more positive than the Anode --- A tiny current flows opposite to the arrow in the symbol.

Graphical PN-Junction Diode V-I Characteristic

Forward Bias Region
Reverse Bias Region

Reverse breakdown

Mathematical Approximation
VD VT

ID =Is (e

-1)

Ideal PN Junction Diode V-I Characteristic

Forward Bias Short Circuit

Reverse Bias Open Circuit

Diode Reverse Recovery Time

ta is the time to remove the charge stored in the depletion region of the junction
tb is the time to remove the charge stored in the bulk semiconductor material

Reverse Recovery Characteristics Soft Recovery

Reverse recovery time = trr = ta+tb Peak Reverse Current = IRR = ta(di/dt)

Reverse Recovery Characteristics Abrupt Recovery

Reverse recovery time = trr = ta+tb Peak Reverse Current = IRR = ta(di/dt)

Series-Connected Diodes
Use 2 diodes in series to withstand higher reverse breakdown voltage. Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it. Would like to Equalize the voltages.

Series-Connected Diodes with Voltage Sharing Resistors

Series-Connected Diodes with Voltage Sharing Resistors

Series-Connected Diodes with Voltage Sharing Resistors

Is = Is1+IR1 = Is2+IR2 IR1 = VD1/R1 IR2 = VD2/R2 = VD1/R2

Is1+VD1/R1 = IS2+VD1/R2 Let R = R1 = R2 Is1 + VD1/R = Is2 +VD2/R VD1 + VD2 = Vs

Example 2.3
Is1 = 30mA, Is2 = 35mA VD = 5kV (a) R1=R2=R=100k, find VD1 and VD2 (b) Find R1 and R2 for VD1=VD2=VD/2

Example 2.3 (a)

Is1 = 30mA Is2 = 35mA R1 = R 2 = R = 100k -VD = -VD1 - VD2 VD2 = VD - VD1 VD1 VD2 Is1 + = Is2 + R R VD R VD1 = + (IS2 -IS1 ) 2 2 5kV 100k VD1 = + (3510-3 - 3010 -3 ) = 2750Volts 2 2 VD2 = VD - VD1 = 5kV - 2750 = 2250Volts

Example 2.3 (a) simulation

R1 100kOhm

+ -

U1 -2.727k V DC 1MOhm

D1 DIODE_VIRTUAL*

V1 5000 V

R2 100kOhm

+ -

U2 -2.273k V DC 1MOhm

D2 DIODE_VIRTUAL**

Example 2.3 (b)

Is1 = 30mA Is2 = 35mA VD = 2.5kV 2 VD1 VD2 Is1 + = Is2 + R1 R2 VD1 = VD2 = VD2R1 VD1 - R1(Is2 -Is1 )

R2 =

R1 = 100k 2.5kV100k R2 = 2.5kV -100k(3510-3 - 3010 -3 ) R2 = 125k

Example 2.3 (b) simulation

R1 100kOhm

+ -

U1 -2.500k V DC 1MOhm

D1 DIODE_VIRTUAL*

V1 5000 V

R2 125kOhm

+ -

U2 -2.500k V DC 1MOhm

D2 DIODE_VIRTUAL**