GUIDE: Prof. F.A .Talukdar Asst. Prof. R.H.Laskar ECE Department NIT Silchar By Ram Kumar Outline Motivation Introduction Background Basic LNA Design Problem Formulation Proposed Work Reference Motivation Numerous co-existing wireless standards and wireless equipment RF Receiver
Antenna receives the entire band of signals Stringent requirements on the receiver front-end BPF filters the out of band channels LNA receives the entire in-band signals In-band channel interference problems in LNA Intermodulation BPF1 BPF2 LNA LO Mixer BPF3 IF Amp RF front end LOW NOISE AMPLIFIER First gain stage in receiver Amplify weak signal Significant impact on noise performance Dominate input-referred noise of front end
Impedance matching Efficient power transfer Better noise performance Stable circuit LNA subsequent LNA frontend G NF NF NF 1
LNA Design Consideration Noise performance Power transfer Impedance matching Power consumption Linearity
Intermodulation Intermodulation is one of the major causes of distortion in RF systems When two signals with different frequencies are applied to a non-linear system, the output in general exhibits some components that are not harmonics of the input frequencies . This is called inter-modulation The 3 rd order inter-modulation product are the interferers at (2 1
2 ), and (2 2
1 ) which can appear very close to those at 1 and 2 (when 1 - 2 is small) and cannot be removed by a low pass filter.
IIP3 A point at which the amplitude of fundamental and the 3 rd intermodulation meet called iip3. Background Existing Linearization Techniques Optimum Biasing Negative Feedback Derivative superposition Optimum Biasing Current IIP3= gm3=0 results in very high IIP3 i d = g m1 v gs +g m2 v gs 2
+g m3 v gs 3 +. Optimum Biasing Drawbacks High IIP3 obtained over a narrow region Process variations degrade IIP3 Limited voltage gain due to restricted input transconductance (gm1) Poor NF Negative Feedback
Linearity improvement at the expense of circuit gain Feedback techniques not suitable at RF frequencies Derivative Superposition (DS) Method problem of narrow range with optimum biasing technique. gm3 negative in strong inversion and positive in weak inversion
Wide range of bias values with small gm3 and hence IIP3 improvement obtained Drawbacks Weak inversion transistor connected in parallel degrades NF Second order non-linearity effect on IIP3 Auxiliary transistor affects both linearity and input match leading to increased design steps
Circuit Diagram of inductive source Degeneration LNA S11 (Reflection Parameter) Noise Figure S21 IIP3 Problem Formulation
Increase the iip3 without sacrificing noise figure. For high iip3 vgs-vt should be high but it reduces gain. Increase the iip3 without sacrificing the gain. Proposed work IM3 components in the drain current of the main transistor has the required information of its nonlinearity
Auxiliary circuit is used to tune the magnitude and phase of IM3 components Proposed work Making an auxiliary circuit without degradation in noise figure. Improve output matching circuit. Improve biasing to increase Vgs-Vt. Making layout. References V. Aparin, G. Brown, and L. E. Larson, Linearization of CMOS LNAs via optimum gate biasing, in Proc. IEEE Int. Circuits Syst. Symp.,Vancouver, BC, Canada, May 2004, vol. 4, pp. 748751. C. Xin and E. Snchez-Sinencio, A linearization technique for RF low noise amplifier, in Proc. IEEE Int. Circuits Syst. Symp., Vancouver, BC, Canada, May 2004, vol. IV, pp. 313316. T. Lee and Y. Cheng, High-frequency characterization and modeling of distortion behavior of MOSFETS for RF IC design, IEEE J. Solid-State Circuits, vol. 39, no. 9, pp. 14071414, Sep. 2004. T. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, 1998. Choi, K., T. Mukherjee, and J. Paramesh, A linearity-enhanced wideband low-noise amplifier," IEEE RF Integrated Circuits Symp. Dig., 127{130, June 2010.