EE314

IBM/Motorola Power PC620

IBM Power PC 601
Motorola MC68020
Field Effect
Transistors
Chapter 12: Field
Effect Transistors
1.Construction of MOS
2.NMOS and PMOS
3.Types of MOS
4.MOSFET Basic Operation
5.Characteristics


The MOS Transistor
Polysilicon
Aluminum
JFET Junction Field Effect Transistor

MOSFET - Metal Oxide Semiconductor Field Effect Transistor

n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)
The MOS Transistor
n+ n+
p-substrate
Field-Oxide
(SiO
2
)
p+ stopper
Polysilicon
Gate Oxide
Drain
Source
Gate
Bulk Contact
CROSS-SECTION of NMOS Transistor
Switch Model of NMOS Transistor
Gate
Source
(of carriers)
Drain
(of
carriers)
| V
GS
|
| V
GS
| < | V
T
|
| V
GS
| > | V
T
|
Open (off) (Gate = 0)
Closed (on) (Gate = 1)
R
on
Switch Model of PMOS Transistor
Gate
Source
(of carriers)
Drain
(of carriers)
| V
GS
|
| V
GS
| > | V
DD
| V
T
| | | V
GS
| < | V
DD
|V
T
| |
Open (off) (Gate = 1)
Closed (on) (Gate = 0)
R
on
MOS transistors Symbols
D
S
G
D
S
G
G
S
D D
S
G
NMOS
Enhancement NMOS
PMOS
Depletion
Enhancement
B
NMOS with
Bulk Contact
Channel
JFET and MOSFET Transistorsor
L = 0.5-10 m
W = 0.5-500 m

SiO
2
Thickness = 0.02-0.1 m
Device characteristics depend on L,W, Thickness, doping levels
Symbol
MOSFET Transistor Fabrication Steps
Building A MOSFET Transistor Using Silicon
http://micro.magnet.fsu.edu/electromag/java/transistor/index.html
It is done. Now, how does it
work?
n-channel MOSFET Basic Operation
Operation in the Cutoff region
Schematic
pn junction:
reverse bias
i
D
=0
for v
GS
<V
t0
When v
GS
=0 then i
D
=0 until v
GS
>V
t0
(V
t0
threshold voltage)
n-channel MOSFET Basic Operation
Operation in the Triode Region
For v
DS
<v
GS
-V
t0
and v
GS
>V
t0
the NMOS is operating in the triode region

Resistor like characteristic
(R between S & D,
Used as voltage controlled R)
For small v
DS
, i
D
is proportional
to the excess voltage v
GS
-V
t0
n-channel MOSFET Basic Operation
Operation in the Triode Region
( ) | |
2
0
2
DS DS t GS D
v v V v K i =
2
KP
L
W
K
|
.
|

\
|
=
Device parameter KP for
NMOSFET is 50 A/V
2

n-channel MOSFET Basic Operation
Operation in the Saturation Region (v
DS
is increased)
Tapering
of the
channel
- increments
of i
D
are
smaller
when
v
DS
is
larger
When v
GD
=V
t0
then the channel
thickness is 0 and
( )
2
0 t GS D
V v K i =
n-channel MOSFET Basic Operation
Example 12.1
An nMOS has W=160 m, L=2 m, KP= 50 A/V
2
and V
to
=2 V.

Plot the drain current characteristic vs drain to source voltage
for v
GS
=3 V.

2
KP
L
W
K
|
.
|

\
|
=
( ) | |
2
0
2
DS DS t GS D
v v V v K i =
( )
2
0 t GS D
V v K i =
n-channel MOSFET Basic Operation
Characteristic
2
DS D
Kv i =
Example 12.1
Channel length
modulation
i
d
depends on v
DS
in
saturation region
(approx: i
D
=const in
saturation region)
p-channel MOSFET Basic Operation
It is constructed by interchanging the n and p regions of n-
channel MOSFET.
Symbol
Characteristic
How does p-channel
MOSFET operate?
-voltage polarities
-i
D
current
-schematic