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Etienne Sicard
Sonia Ben Dhia
Department of Electrical & Computer
Engineering
INSA University of Toulouse
France
e-mail:
etienne.sicard@insa-toulouse.fr
sonia.bendhia@insa-toulouse.fr
SUMMARY
1. CONTEXT
2. EDUCATIONAL NEEDS
3. MICROWIND
4. EVALUATION
5. PRESPECTIVES
7. CONCLUSION
CONTEXT
0.18 m
2005
90 nm
2010
32 nm
Devices
3 nMOS, 3 pMOS
6 nMOS, 6 pMOS
2V
1V
12 nMOS, 12 pMOS
Interconnects
Frequency
500 MHz
1V
1.5 GHz
5 GHz
CONTEXT
Poly - SiO2
Double
patterning
10-3
10-4
Ideal
device
10-5
nMOS Strain
Metal gate
High K oxide
Pocket
implant
pMOS Strain
High-
10-6
10-7
Ioff current
decrease
10-8
10-9
10-10
0.0
0.5
1.0
CONTEXT
High (x 10)
Consumer
Mobile
Computing
Moderate
(x 1)
Digital camera 3G phone
s
Low
(x 0.1)
MP3
100
High
speed
General
Purpose
2G phones
Super low
leakage
10
Super
high
speed
Personal org.
Low leakage
1
Low
(-50%)
Moderate
(0%)
Speed
Fast
(+50%)
500
1000
1500
Ion (A/m)
5
CONTEXT
Technology
always ahead
RF
RS
1000
Host
Interface
System design
IP design
100
Code
ManagerLink
Controller
Logic design
10
1
Layout design
0.1
1995
1998
2001
2004
2007
2010
2013
Microwind
6
EDUCATIONAL NEEDS
Teaching
hours
Physics
CMOS design
Embedded
software
System
integration
Years
EDUCATIONAL NEEDS
Reduced number of
students
Educational
tools
Ambitious designs
Graduates
Long practical
sessions
:
PhDs
Professional
tools
Short
sessions
:
Simple design
Concepts
Undergraduates
Rapid
progress
Industryoriented
tools
Slow
progress
10
15
Hours
20
MICROWIND
10nm
High voltage
MOS (double
gate oxide)
0.25m
0.18m
0.13m
90nm
Technology
addressed in
2010
65nm 45nm
1nm
Low voltage
MOS (minimum
gate oxide)
32nm
22nm 18nm
11nm
HighK (r=7-20)
SiON (r=4.2-6.5)
0.1nm
SiO2 (r=3.9)
1995
2000
Year
2005
2010
2015
MICROWIND
Editing icons
Layout
library
2D, 3D views
Access to
simulation
Simulation
properties
Active technology
Ion current
List of model
parameters
for BSIM4
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MICROWIND
1.
MOS DEVICE
2.
2.
I/V Simulation
3.
2D view
4.
4.
3.
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MICROWIND
Design of pMOS
2.
Design of inverters
3.
Design of a VCO
4.
5.
6.
7.
8.
2.
1.
3.
4.
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MICROWIND
PROJECT EXAMPLES
engage students in a stimulating
learning experience using
latest CMOS technologies
1.
2.
Combinational and
sequential circuit layouts
3.
ALU Design
4.
1.
3.
2.
4.
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EVALUATION
AUDIENCE
The VLSI course was evaluated
anonymously by the students
UNISA course evaluation
questionnaire containing ten core
questions and open text
response.
The students rated the course
very highly in all the evaluation
items.
The course in the in the top-5
courses offered in engineering in
UniSA.
(off-line: Dr. Aziz won the top
teacher of the year in Australia
2009)
Question
EVALUATION
RESULTS
Answers to questionnaire
INSA
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
% response
% response
UNISA
10
80%
70%
60%
50%
40%
30%
20%
10%
0%
1
Evaluation item #
Strongly agree
Agree
Neutral
Disagree
Evaluation item #
Strongly disagree
Strongly agree
Agree
Neutral
Disagree
Strongly disagree
15
10
EVALUATION
COMMENTS
Students
From just a few logic gates, we have created
a 4-stage binary counter and compiled it into
layout. It also gave us the basic concepts to
understand the operation of the transistors in
order to extract their models.
The 24-hours clock project was a good
exercise which permitted us to see how it is
inside a semiconductor and how it works.
Teachers
The tools along with the project-based
course resources have assisted us to
develop an educational program in our
Bachelor of Engineering Program. The tools
offer easy to use menus for design and
simulation, and the choice of a range of
technology models to enable students to
develop critical design and analysis skills
using the latest technologies. (Malaysia).
Microwind and Dsch tools are used for VLSI
teaching programs at both postgraduate and
undergraduate levels. The project-based
methodology supported by a variety of
learning resources has made the learning
of VLSI Design very stimulating.
(Bangladesh).
PERSPECTIVES
Application note on 32 nm
& 22 nm technologies
Application note on
process variability and
Monte-Carlo simulation
3D views of packages
based on IBIS
3D views of carbon-nano
tubes
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CONCLUSION
Intuitive and user friendly design tools enabled students to develop circuit
design skills using nano-CMOS technologies
Illustrations (2D, 3D, I/V) help to handle increased process complexity and
refinements
Digital and analog basic bloc design with high levels of student satisfaction.
18
REFERENCES
REFERENCES
MICROWIND DOWNLOADS www.microwind.net
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