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Bipolar Junction
Transistor (BJT)
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Outline
Introduction
Operation in the Active Mode
Analysis of Transistor Circuits at DC
The transistor as an Amplifier
Graphical Analysis
Biasing the BJT for Discrete-Circuit Design
Configuration for Basic Single Stage BJT Amplifier
High frequency Model
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Introduction
Physical Structure
Circuit Symbols for BJTs
Modes of Operation
Basic Characteristic
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Physical Structure
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Physical Structure
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Modes of Operation
Modes
EBJ
CBJ
Cutoff
Reverse
Reverse
Saturation
Forward
Forward
Active
Forward
Reverse
Amplifier
Reverse
active
Reverse
Forward
Performance
degradation
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Application
Switching application
in digital circuits
Basic Characteristics
Far more useful than two terminal devices
(such as diodes)
The voltage between two terminals can
control the current flowing in the third
terminal. We can say that the collector
current can be controlled by the voltage
across EB junction.
Much popular application is to be an
amplifier
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Current Flow
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Collector Current
Collector current is the drift current.
Carriers are successful excess minority
carriers.
The magnitude of collector current is almost
independent of voltage across CB junction.
This current can be calculated by the
gradient of the profile of electron
concentration in base region.
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Base Current
Base current consists of two components.
Diffusion current
Recombination current
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Emitter Current
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Profiles of Minority-Carrier
Concentrations
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Current Equation
Collector current
iC I n I s e
Base current
Is
iB
iC
Emitter current
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VT
vBE VT
e
Is
iE
iC
vB E
vB E VT
e
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AE qDn n p 0
AE qDn ni
W
N AW
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Dn N D LP 2 Dn b
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Recapitulation
Collector current has the exponential
relationship with forward-biased voltage vBE
as long as the CB junction remains reversebiased.
To behave as an ideal constant current
source.
Emitter current is approximately equal to
collector current.
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Graphical Representation of
Transistors Characteristics
Characteristic curve relates to a certain
configuration.
Input curve is much similar to that of the diode,
only output curves are shown here.
Three regions are shown in output curves.
Early Effect is shown in output curve of CE
configuration.
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Saturation region
EBJ and CBJ are not only forward-biased but also turned on;
Collector current is diffusion current not drift current.
Turn on voltage for CBJ is smaller than that of EBJ.
Breakdown region
EBJ forward-biased, CBJ reverse-biased;
Great voltage value give rise to CBJ breakdown;
Collector current increases dramatically.
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(a) Conceptual circuit for measuring the iC vCE characteristics of the BJT.
(b) The iC vCE characteristics of a practical BJT.
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vCE
iC I s e
(1
)
VA
Narrow base width, small value of Early voltage,
strong effect of base width modulation, strong
linear dependence of Ci on vCE .
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DC Analysis Steps
a.
b.
Assuming the device operates at the active region, we can apply the
relationship between IB, IC, and IE, to determine the voltage VCE or
VCB.
c.
ii.
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Examples
Example 5.4 shows the order of the analysis steps
indicated by the circled numbers.
Example 5.5 shows the analysis of BJT operating
saturation mode.
Example 5.6 shows the transistor operating in
cutoff mode.
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Examples(contd)
Example 5.7 shows the analysis for pnp type
circuit. It indicates the the current is affected by illspecified parameter . As a rule, one should strive
to design the circuit such that its performance is as
insensitive to the value of as possible.
Example 5.8 is the bad design due to the currents
critically depending on the value of .
Example 5.9 is similar to the example 5.5 except
the transistor is pnp type.
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Examples(contd)
Example 5.10 shows the application of Thvenins
theorem in calculating emitter current and so on.
This circuit is the good design for the emitter is
almost independent of and temperature.
Example 5.11 shows the DC analysis for two stage
amplifier.
Example 5.12 shows the analysis of the power
amplifier composed of the complimentary
transistors.
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Conceptual Circuit
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Conceptual Circuit(contd)
With the dc sources (VBE and VCC) eliminated (short circuited), thus only
the signal components are present.
Note that this is a representation of the signal operation of the BJT and
not an actual amplifier circuit.
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Transconductance
Expression
gm
I CQ
VT
Physical meaning
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vbe
V
T
ib
I BQ
gm
re
ie
I EQ
gm
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The T Model
These models explicitly show the emitter resistance re rather than the base
resistance r featured in the hybrid- model.
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CE
v B E const.
VA
'
IC
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Graphical Analysis
a.
b.
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Graphical Analysis(contd)
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Graphical determination of the signal components vbe, ib, ic, and vce when a
signal component vi is superimposed on the dc voltage VBB
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a.
Load-line A results in
bias point QA with a
corresponding VCE which
is too close to VCC and
thus limits the positive
swing of vCE.
b.
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by fixing VBE
by fixing IB.
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Circuit with the voltage divider supplying the base replaced with its Thvenin
equivalent.
Stabilizing the DC emitter current is obtained by considering the negative
feedback action provided by RE
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Two-Power-Supply Version
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b.
c.
d.
e.
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Characteristic Parameters of
Amplifier
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Definitions
Input resistance with no load
v
Ri i
ii R
L
Input resistance
Rin
vi
ii
vo
vi
RL
Voltage gain A vo
v
vi
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Definitions(contd)
Short-circuit current gain
Ais
io
ii
RL 0
Current gain
Ai
io
ii
Short-circuit transconductance
io
Gm
vi
RL 0
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Definitions(contd)
Open-circuit overall voltage gain
v0
Gvo
vsig
RL
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Definitions(contd)
vx
Ro
ix
Output resistance
Rout
vi 0
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vx
ix
v sig 0
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Definitions(contd)
Voltage amplifier
Voltage amplifier
Transconductance amplifier
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Relationships
Voltage divided coefficient
vi
Rin
Gv
RL
Av Avo
RL Ro
Rin
RL
Avo
Rin Rsig
RL Ro
Ri
Gvo
Avo
Ri Rsig
RL
Gv Gvo
RL Rout
Avo Gm Ro
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Basic Structure
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Common-Emitter Amplifier
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Common-Emitter Amplifier
Equivalent circuit obtained by replacing the transistor with its hybrid- model.
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Characteristics of CE Amplifier
Input resistance
Voltage gain
Rin r
Av g m (ro // RC // RL )
Output resistance
( RC // RL // ro )
r Rsig
Rout RC
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Summary of CE amplifier
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Gv
Output resistance
Rsig
( RC // RL )
(1 )( re Re )
Rout RC
Ais
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Common-Base Amplifier
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Common-Base Amplifier
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Characteristics of CB Amplifier
Input resistance Rin re
Voltage gain
Av g m ( RC // RL )
Overall voltage gain
Gv
Output resistance
( RC // RL )
Rsig re
Rout RC
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The Common-Collector
Amplifier or Emitter-Follower
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The Common-Collector
Amplifier or Emitter-Follower
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The Common-Collector
Amplifier or Emitter-Follower
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Characteristics of CC Amplifier
Input resistance Rib (1 )( re ro // RL )
Voltage gain
(1 )( r // R )
Av
(1 )( re ro // RL )
RB // Rib
(1 )( ro // RL )
Gv
RB // Rib Rsig (1 )( re ro // RL )
Output resistance
Rout re
RB // Rsig
1
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Junction Capacitances
C je 0
2C je 0
VBE m
(1
)
Voe
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h fe ( s )
IC
IB
vCE 0
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0
1 s (C C ) r
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1
(C C )r
gm
T 0
C C
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