DEPARTMENT OF TECHNICAL EDUCATION

ANDHRA PRADESH
Name
Designation
Branch
Institute
Year/semester
Subject
Subject code
Topic
Duration
Sub Topic
Teaching Aids

: C.V.S.B.UMA VANI
: Lecturer
: ECE
: GPW ,Palamaner.
: III semester
: Digital Electronics
: CM-305
: Semiconductor Memories (5/10)
: 50 Mts
: MOS RAM Cells
: ppt , Diagrams
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OBJECTIVES
On completion of this period you would be able
to
Explain the working of Static MOS RAM Cell.

Explain the working of Dynamic MOS RAM Cell.

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Recap

In the last class we have studied about

The Memory Cell.
Working of basic Bipolar RAM Cell.

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Do You Know ?

What is meant by Memory Cell ?

The Working of Bipolar RAM Cell

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MOS RAMs
MOS devices use two different techniques to store
information.
Depending on the type of basic memory cell it can be
static or dynamic.
Static MOS devices are slower but easier to drive
than dynamic memories.
Static memories use a flip-flop as a basic memory
cell.
Dynamic MOS circuits make use of temporary
storage of data on the parasitic capacitances.
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Static MOS RAM Cell

Fig.1 Static MOS RAM Cell

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 A RAM Memory Cell consisting of two cross coupled

MOS inverters is shown in Fig.1

Addressed by setting Ax and Ay to 1.

When Ax =1 the cell is connected to data and data line.

When Ay =1 the Transistors T7 and T8 are ON.

To Write into the Cell, set W=1, Transistor T9 becomes

ON.

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 If Data input is 1,makes T3 ON and level D =0.

If Data input is 0, makes T3 OFF and level D =1.

To Read the state of the Flip-Flop, we set R=1 this

connects data output to D.

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Dynamic MOS RAM Cell

Fig.2 Dynamic MOS RAM Cell

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 A Dynamic cell uses 4 transistors in place of 6 used in

static cell. This reduces the chip area and saving of
power.
The 4 Transistor dynamic MOS RAM Cell is shown in Fig.2
The state of the cell is stored on the stray capacitances C1

and C2 .
The cell is addressed by making Ax = Ay =1.
In one state of the cell, the voltage across C1 is large and
T1 is ON and C2 has zero voltage and T2 is OFF.
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 In the other state the voltages on C1 and C2 and the

conducting states of T1 and T2 are reversed.
For Writing into the cell, we set W=1
For reading from the cell we set R=1

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Summary

We have discussed about

The working of Static MOS RAM Cell.
The working of dynamic MOS RAM Cell.

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QUIZ
(1) The Memory Cell in which the refreshing
circuitry is required
(a) Static MOS RAM Cell
(b) Dynamic MOS RAM Cell

(c) Bipolar static RAM Cell

(d) None of the above

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(2) Static memories are ---------- compared

to dynamic memories.

(a) Faster
(b) Complicated
(c) Slower
(d) None of the above

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QUESTIONS

(1) Explain the working of Static MOS RAM Cell with a

neat circuit.

(2) Explain the working of dynamic MOS RAM Cell with a

neat circuit.

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