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Analysis
Reference: Sergent, J., and Krum, A., Thermal Management
Handbook for Electronic Assemblies, McGraw-Hill, New York,
1998. Chapter 7
Another helpful source: Vaynman, S., Mavoori, H., Chin, J., Fine,
M.E., Moran, B, and Keer, L.M., Stress management and reliability
assessment in electronic packaging, National Electronic
Packaging and Production Conference--Proceedings of the
Technical Program (West and East), v 3, 1996, p 1711-1726.
TCE
Problem: when one material is bonded to another with a
much smaller temperature coefficient of expansion
(TCE)
E=TCExDT
E=strain (length/length)
DT=temperature differential across sample
S=EY
S=stress (psi/in or Pa/m)
Y=modulus of elasticity (lb/in2 or Pa)
When total stress (S*max dimension of sample) exceeds
tensile strength, cracks will form
Note that this analysis is simplified (Dr. Yee might not
approve.)
Die-Die Attach-Substrate
Stress concentrations
During manufacturing, small stress concentrations often occur small
cracks when a semiconductor die is sawed, small voids formed.
When external stress is applied, these concentrations amplify the
stress and may cause a fracture.
For an elliptical microcrack with major axis perpendicular to applied
stress, max stress at crack tip
To Minimize Stress
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