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Reduction
Amit Agarwal, Lei He et. al
Presenters: Qun Gu
Ho-Yan Wong
Courtesy of Lei He
Outline
Introduction
Circuit level leakage reduction
System level leakage reduction
Coupled leakage and thermal simulation
and management
Power Trends
Circuit Power
Dynamic Power:
determined by circuit
performance requirement
etc. The percentage is
getting smaller.
Short_Circuit Power: Both
PU and PD circuit partially
conduct. Small percentage.
(<10%)
Leakage Power:
Increasingly important, and
many issues dependent,
such as device geometry,
temperature, doping,
processing and data pattern
dependent, etc. It is very
complicated and worthy to
study more to improve it.
Subthreshold leakage
Subthreshold
Leakage
Gate Leakage
Gate
Source
Drain
n+
n+
Reverse Biased
Junction BTBT
Bulk
Gate Leakage
Leakage Dependences
threshold CMOS
Active
How?
Low Vth for critical path
High Vth for non-critical path
Concerns:
It is not so straigtht forward to do this. Sometime tradeoff exist
between high Vth and low Vth applications.
Vth variation cannot be always success at low voltage supplies.
Increasing the number of critical paths will sometimes hurt
circuit performance.
Concerns:
Trade off between speed and
power
Data pattern determined
Trade off with other leakage
power ( gate leakage)
How?
Inserts an extra series connected transistor
(sleep transistor with high Vth) in the PU/PD
path of a gate and turns it off in the standby
mode of operation.
Disadvantages:
Increase area and delay
Data retention problem
Hard to turn on completely at very low
supply voltages
Disadvantages:
Increase PN junction reverse
leakage
Scaling down technology worsen
short channel effects and weaken
the Vth modulation capability
Disadvantages:
Larger junction capacitance
High body effect for stack devices
How?
When critical path replica frequency is less then reference CLK,
adjust bias to decrease Vth.
Otherwise adjust bias to increase Vth.
Results:
How?
The slow dies which fail to meet the desired frequency can be forward
body biased to improve performance which paying more leakage power.
On the other hand, excess leakage dies can be reverse body biased to
meet the leakage power specifications.
Effects:
So adaptive body bias reduces the spread of the die frequency distribution
by 7X, compared to a conventional zero body bias.
Programmable
keeper size scheme:
A desired effective keeper
width can be chosen
among {0, W, 2W, 7W}
according to the control
bit.
Power
Motivation
Leakage current has increased due to
scaling in Vt, L, and tox
Leakage power becomes more important
due to high leakage devices and low
activity rates
Leakage power depends greatly on
temperature
Idle Period
Leakage power reduction is useful only
when Idle Period > M.I.T.
FTO
FCTO
Adjust the time-out threshold with the proportionalintegral (PI) feedback controller
Update time-out threshold according to
Data word
Tag Index Block offset
Timeout controller
hit/miss
Hit?
Yes
Counter
Data
potion
Tag
potion
Wakeup
signal
Threshold
controller
Wakeup/
shutdown
signals
Threshold controller
Timeout
controller
hit/miss
Nmiss
Mux
setpoint
gain
Threshold
output
Threshold
register
Benchmark
FTO
FCTO SWAY
go
52.21
63.80
li
12.92
equake
art
DRI
FTO
FCTO
SWAY
DRI
57.55
56.79
1.06
1.10
9.95
7.39
27.87
26.64
26.56
0.93
1.07
7.28
7.71
35.75
48.61
46.40
45.71
0.84
1.01
9.73
10.58
0.07
2.20
2.17
2.18
0.37
0.92
3.18
3.14
Power
Performance simulator
(e.g. SimpleScalar, IMPACT)
uArch
Floorplan
packaging
Leakage estimation
Workload
(e.g. Spec 2k)
Adjusted
conditions
(T, delay)
Temperature-aware
architecture techniques
(DVS, DTM,
reconfigurability
power model, GALS, etc)
1986.13Vdd 4396.09
Pl (T ,Vdd ) (5.30 1010 words 1.72 109 wordsize ) T 2 exp
Vdd
T
711.92Vdd 3725.53
Pc (T ,Vdd ) 5.29 1010 words wordsize T 2 exp
Vdd
T
(Vdd Vt )
100%
We obtain
delay(Vdd ,T )
1
Isat
Vdd T 1.19
(Vdd Vt )1.2
95%
T=100oC
90%
T=80oC
T=60oC
85%
80%
75%
1
1.1
1.2
Vdd (V)
1.3
Thermal Modeling
100%
80%
60%
40%
20%
0%
35 85 110 Dep
Benchmark art
35 85 110 Dep
Benchmark gcc
Temperature (oC)
Dynamic power
Leakage power
Thermal Runaway
Thermal runaway is caused by the positive
feedback loop between on-resistor,
temperature, and power
Also a result of the interaction between
leakage power and temperature
Component
Assume no throttling
and constant power
consumption,
conditions for thermal
runaway is equivalent
to d2T/dt2 > 0
Lowest temperature
to meet TR criteria is
runaway temperature
<=1
Dynamic thermal
management using
fetch toggling with PI
feedback controller
Implemented 2
models: simple (fixed
Ps) and accurate (Ps
is temp. dependent)
Cooling
down
Throughput (BIPS)
System Performance
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Max throughput
1.1
1.2
1.3
Vdd (V)
Feedback control, Max T=80C
No management, Max T=110C
Active Cooling
Throughput (BIPS)
6
0.3
0.1
0
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Vdd (V)
References