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ECE544
Prepared by D.J. Tegtmeier
Presentation Overview
1.
2.
3.
Capacitive Sensors
Reference: http://en.wikipedia.org/wiki/Piezoresistance_Effect
Our Sensor is a
Piezoresistive
Sensor based on a
Wheatstone Bridge
Configuration.
Resistors are made
with Boron Diffusion.
Vout =Iin*R
R + R
R - R
R - R
R + R
1.
2.
3.
4.
Any guesses?
Thermal Oxidation
Wet Oxidation
Followed by Dry
Oxidation
Photolithography for
Piezoresistive Elements
Contact Lithography
Use Shipley 1813
Positive Resist
Si + O2 SiO2 (Dry Oxidation)
What happens to areas
Si + 2H2O2 SiO2 (Wet Oxidation)
exposed to UV light in
Positive Resist?
If we want piezoresistive
holes, do we use darkfield or light-field mask?
Ref: http://chem.chem.rochester.edu/~chem421/polymod2.htm
1.
2.
3.
Creates Resistors in
Substrate
Three Methods
Solid Evap. (Tetramethyl
Borate, Boron Nitride) - Rare
Gaseous Diborane (B2H6)
Dangerous!! 160 ppm for 15
min life threatening
Liquid Our Type PBF-6MK
Borosilicate polymer in
ethanol. Creates borosilicate
glass, boron oxide, and
unused boron.
5 Squares
3 Squares
1 Square
Surface
Concentration
Junction Depth
Windows Must Be
Opened in New Oxide
For Backside Etch.
Use Front to Backside
Alignment
Etch Silicon Dioxide
w/BOE (HF 6:1)
Finished when wafer is
hydrophobic (water rolls
off)
Photo:
http://www.ee.byu.edu/cleanroom/alignment.phtml
Need 20 m Thick
Diaphragm, therefore
must etch approx. 500
m.
Why use TMAH instead
of KOH if KOH is faster?
TMAH/IPA
KOH
25% wt.
TMAH
45% wt KOH
75oC
{100}
12 m/hr
21 m/hr
{111}
0.7 m/hr
SiO2
<0.01m/hr
Topside Alignment
Use Shipley 1813
Postive Resist
Several Methods, we
use Sputtering
2 Types (Magnetron)
-RF Sputter
-DC Sputter
When do you use RF
sputter?
What is a sputter etch?
What is argon used?
http://en.wikipedia.org/wiki/Sputtering
First Photoresist is
deposited on metal and
patterned for desired traces
Uses Aluminum Etch, 8595% Phosphoric Acid, 2-8%
Nitric Acid, and Water
Why in the picture is there a
hole in the metal?
What is the difference
between lift-off and metal
etch?
Must Thermal Anneal After
Etch, Why?
3 Squares
5 Squares
1 Square
R=lw/xj
Rs=/xj
R=(squares)/xj
Kelvin Structures
-Used for Effective Line
Width with Rs
Weff = Iab*L*Rs/V
Negative Polarity
Why?
Positive Polarity is faster.
High Temperature, High
Voltage
Na+ ions moved from
interface, leaving
Oxygen and forming
SiO2.
Process Safety
Hydrofluoric Acid
- 20-50% Solutions
May Produce No
Immediate Symptoms
- 2.5% Produce
Hypocalcemia
-Fatal Accidents Below
10%
http://www-safety.deas.harvard.edu/advise/accident.html
Process Safety
http://www.emedicine.com/emerg/topic804.htm