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Technology
To realize Semiconductor DEVICES or an
INTEGRATED CIRCUIT an adequate set of
technological steps is required that allows the
realization of the same on top surface/plane of a
semiconductor wafer.
Circuit symbol
Schematic diagram
p-type
net acceptor
concentration NA
n-type
net donor
concentration ND
cross-sectional area AD
ID
VD
metal
SiO2
VD
SiO2
p-type
P-typeSi
n-type Si
metal
Silicon dioxide
Si
n-Silicon
Silicon-Oxide Interface
Silicon dioxide
Positive
Photo Resist Layer
n-Silicon
Spin Coat of Positive Photo Resist
Ultra Violet Rays
Glass plate
Emulsion
Silicon dioxide
Mask
n-Silicon
Photo Resist Polymerization on U.V Exposure
Silicon dioxide
Silicon
dioxide
n-Silicon
Silicon dioxide
Silicon
dioxide
n-Silicon
Silicon dioxide
n-Silicon
Silicon dioxide
n-Silicon
PRE DEPOSITION
Boron Atoms ambient
Silicon dioxide
n-Silicon
Silicon dioxide
n-Silicon
Boron atoms
Silicon dioxide
n-Silicon
DRIVE - IN
Silicon dioxide
p
n-Silicon
Silicon dioxide
p
n-Silicon
Silicon dioxide
p
n-Silicon
Silicon dioxide
p
n-Silicon
Dip in dil. HF to remove oxide if any on the front side and claen
n-Silicon
Silicon dioxide
p
n-Silicon
Photo Resist
Aluminium
p
U. V Rays
Glass
Aluminium
Silicoon dioxide
p
Photoresist
P- Contact
n-Silicon
Silicon dioxide
p
n-Silicon
Silicon dioxide
n-Silicon
After Aluminium ETCHING
Silicon dioxide
n-Silicon
Metal Thin Film