Figure3.1Semiconductordiode.

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Figure3.2Voltamperecharacteristicforatypicalsmallsignalsilicondiodeatatemperatureof300K.
Noticethechangesofscale.

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Figure3.3Zenerdiodesymbol.

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Figure3.4Circuitforloadlineanalysis.

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Figure3.5Loadlineanalysisofthecircuit
ofFigure3.4.

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Figure3.6LoadlineanalysisforExamples3.1and3.2.

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Figure3.7DiodecharacteristicforExercise3.1.

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Figure3.8Idealdiodevoltamperecharacteristic.

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Figure3.9Analysisofadiodecircuitusingtheidealdiodemodel.SeeExample3.3.

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Figure3.10CircuitsforExercise3.4.

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Figure3.11Halfwaverectifierwithresistiveload.

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Figure3.12aHalfwaverectifierwithsmoothingcapacitor.

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Figure3.12b&cHalfwaverectifierwithsmoothingcapacitor.

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Figure3.13Fullwaverectifier.

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Figure3.14Diodebridgefullwaverectifier.

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Figure3.15aClippercircuit.

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Figure3.15bClippercircuit.

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Figure3.15cClippercircuit.

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Figure3.16Circuitswithnearlythesameperformance
asthecircuitofFigure3.15.

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Figure3.17a&bSeeExercise3.7.

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Figure3.17cSeeExercise3.7.

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Figure3.17dSeeExercise3.7.

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Figure3.18a&bSeeExercise3.8.

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Figure3.18cSeeExercise3.8.

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Figure3.18dSeeExercise3.8.

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Figure3.19Exampleclampcircuit.

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Figure3.20SeeExercise3.9.

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Figure3.21AnswerforExercise3.10.

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Figure3.22AnswerforExercise3.11.

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Figure3.23Diodelogicgates.

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Figure3.24Avoltageregulatorsuppliesconstantvoltagetoaload.

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Figure3.25Asimpleregulatorcircuitthatprovidesanearlyconstantoutputvoltagefromavariablesupplyvoltage.

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Figure3.26SeeExample3.4

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Figure3.27Analysisofacircuitcontainingasingularnonlinearelementcanbeaccomplishedby
loadlineanalysisofasimplifiedcircuit.

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Figure3.28SeeExample3.5.

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Figure3.29ZenerdiodecharacteristicforExample3.5.

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Figure3.30SeeExercise3.13.

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Figure3.31Diodecharacteristic,illustratingtheQpoint.

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Figure3.32Illustrationofdiodecurrents.

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Figure3.33Variableattenuatorusingadiodeasacontrolledresistance.

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Figure3.34DccircuitequivalenttoFigure3.33forQpointanalysis.

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Figure3.35SmallsignalacequivalentcircuitforFigure3.33.

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Figure3.36Intrinsicsiliconcrystal.

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Figure3.37Thermalenergycanbreakabond,creatingavacancyandafreeelectron,
bothofwhichcanmovefreelythroughthecrystal.

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Figure3.38Aselectronsmovetothelefttofillahole,theholemovestotheright.

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Figure3.39ntypesiliconiscreatedbyaddingvalencefiveimpurityatoms.

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Figure3.40ptypesiliconiscreatedbyaddingvalencethreeimpurityatoms.

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Figure3.41aShockleyHaynesexperiment.

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Figure3.41bShockleyHaynesexperiment.

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Figure3.41cShockleyHaynesexperiment.

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Figure3.42Ifapnjunctioncouldbeformedbyjoiningaptypecrystaltoanntypecrystal,asharpgradientof
holeconcentrationandelectronconcentrationwouldexistatthejunctionimmediatelyafterjoiningthecrystals.

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Figure3.43aDiffusionofmajoritycarriersintotheoppositesidescausesadepletionregiontoappearatthejunction.

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Figure3.43bDiffusionofmajoritycarriersintotheoppositesidescausesadepletionregiontoappearatthejunction.

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Figure3.43cDiffusionofmajoritycarriersintotheoppositesidescausesadepletionregiontoappearatthejunction.

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Figure3.44Underreversebias,thedepletionregionbecomeswider.

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Figure3.45Carrierconcentrationsversusdistanceforaforwardbiasedpnjunction.

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Figure3.46Parallelplatecapacitor.

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Figure3.47Asthereversebiasvoltagebecomesgreater,thechargestoredinthedepletionregionincreases.

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Figure3.48Depletioncapacitanceversusbiasvoltageforthe1N4148diode.

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Figure3.49Holeconcentrationversusdistancefortwovaluesofforwardcurrent.

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Figure3.50Smallsignallinearcircuitsforthepnjunctiondiode.

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Figure3.51Circuitillustratingswitchingbehaviorofapnjunctiondiode.

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Figure3.52aWaveformsforthecircuitofFigure3.51.

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Figure3.52bWaveformsforthecircuitofFigure3.51.

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Figure3.52cWaveformsforthecircuitofFigure3.51.

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Figure3.53AnothersetofwaveformsforthecircuitofFigure3.51.Noticetheabsenceofastorageinterval.

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Figure3.54CircuitusedtodisplaytheVIcharacteristicsofthe1N750Zenerdiode.

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Figure3.57SPICEgeneratedplotforthe1N750Zenerdiodeat25C.

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Figure3.591N750characteristicsfortemperaturerangingfrom0to100Cin25increments.

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