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TRANSISTORS (FET)
Objectives
Introduction
I-V characteristics
MOSFET
Themetaloxidesemiconductor field-effect
transistor(MOSFET,MOS-FET, orMOS FET) is
atransistorused for amplifying or switching
electronicsignals.
Contd
P-MOS
Contd
Schematic diagram
N-MOS
PMOS
Zero bias:The gate is shorted to the source, so drain current (by definition)
equals the IDSS rating of the component. (Remember: IDSS is the shorted
gate-drain current.)
E-MOSFETs
This allows a current to pass through the component. The operation of the
E-MOSFET is represented by the transconductance curve. Note that the
IDSSrating for the component is, by definition, the value of drain current
when VGS=VTH. Since the channel is just beginning to form when
VGS=VTH ,IDSS0A
Cutoff Mode
Occurs when VGS VTH(N)
ID= 0
Triode Mode
Occurs when VGS > VTH(N) and VDS < VGS-VTH(N)
Saturation Mode
Occurs when VGS > VTH(N) and VDS VGS -VTH(N)
PMOS IV CHARACTERISTICS
ID, VGS, VDS, and VTH(P) are all negative for PMOS.
These values are positive for NMOS.
Channel formed when VGS < VTH(P) .Opposite for
NMOS .
Saturation occurs when VDS VGS VTH(P) .
Opposite for NMOS
Cutoff Mode
Occurs when VGS VTH(P)
ID= 0
Triode Mode
Occurs when VGS < VTH(P) and VDS > VGS -VTH(P)
Saturation Mode
Occurs when VGS < VTH(P) and VDS VGS- VTH(P)
The transistor is turned on, and a channel has been created which allows
current to flow between the drain and the source.
The switch is turned on, and a channel has been created, which allows
current to flow between the drain and source.
Since the drain voltage is higher than the gate voltage, the electrons
spread out, and conduction is not through a narrow channel but through a
broader, two- or three-dimensional current distribution extending away
from the interface and deeper in the substrate.
The onset of this region is also known aspinch-offto indicate the lack of
channel region near the drain. The drain current is now weakly dependent
upon drain voltage and controlled primarily by the gatesource voltage.
JFET AMPLIFIER
Power Amplifier
Switching
Common-Sources
Common Drain
Common Gate
Data Sheet
MOSFET AS SWITCHES
MOSFET switches use the MOSFET channel as a lowonresistance switch to pass analog signals when on, and as
a high impedance when off. Signals flow in both
directions across a MOSFET switch.
Contd
For a simple MOSFET without an integrated diode, the source is the more
negative side for an N-MOS or the more positive side for a P-MOS.
All of these switches are limited on what signals they can pass or stop by
their gate-source, gate-drain and source-drain voltages, and source-todrain currents; exceeding the voltage limits will potentially damage the
switch.
MOSFET CHARACTERISTIC
CURVE
1.Cut-off Region
Here the operating conditions of the transistor are zero input gate voltage
(VIN), zero drain currentIDand output voltageVDS=VDDTherefore the
MOSFET is switched "Fully-OFF".
Saturation Region
Here the transistor will be biased so that the maximum amount of gate
voltage is applied to the device which results in the channel
resistanceRDS(on)being as small as possible with maximum drain current
flowing through the MOSFET switch. Therefore the MOSFET is switched
"Fully-ON".
N-MOS as switch
The
The
APPLICATION MOSFET AS
SWITCH