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CB
VB
In order to achieve a
reasonable efficiency
for photon emission,
the
semiconductor
must have a direct
band gap.
CB
VB
For example;
E
Silicon is known as an indirect band-gap
material.
What this means is that
as an electron goes from the bottom of
the conduction band to the top of the
valence band;
it must also undergo a
significant change in
momentum.
CB
k
VB
As
Phonons
Thus,
VB
e-
e-
Producing photon
Electrons recombine with holes.
e-
CB
VB
Method of injection
We
I
n-side
p-side
Notice that:
Photon
The
semiconductor bandgap
energy defines the energy of the
emitted photons in a LED.
To fabricate LEDs that can emit
photons from the infrared to the
ultraviolet parts of the e.m.
spectrum, then we must consider
several
different
material
systems.
No single system can span this
energy band at present, although
the 3-5 nitrides come close.
CB
VB
Unfortunately,
When
10-3
10-4 350
violet
400
blue
450
green
500
GaAs.6p4
GaAs.35p65
GaP:N
ZnSe
10-2
GaN
10-1
GaAs.14p86
100
yellow orange
550
600
red
650
700
750
Wavelength in nanometers
Properties of InGaN
InGaN
Properties of InGaN
A
Concentration:
Band gap:
Wavelength of
photons:
GaN
The highly
gallium rich
alloy
InN
The highly
indium rich
alloy
3.3eV
376 nm
2 eV
620 nm
Part of the
electromagnetic In the ultraviolet
spectrum:
In the visible
(orange)
GaN
InN
ultraviolet
3.3 eV(376 nm)
GaN
InN
violet
3 eV (414 nm)
GaN
InN
GaN
InN
GaN
InN
GaN
2 eV(620 nm)
2.00 eV
InN
GaP
1.42 eV
GaAs
GaP
1.52 eV
GaAs
GaP
1.62 eV
GaAs
GaP
1.72 eV
GaAs
GaP
1.80 eV
GaAs
GaP
1.90 eV
GaAs
GaP
2.00 eV
GaAs
GaP
2.26 eV
Addition of a nitrogen
recombination center to
indirect GaAsP .
Both As and P are group
V elements. (Hence the
nomenclature
of
the
materials
as
III-V
compound
semiconductors.)
Energy
h
+
Momentum
We
X CB
Minimum
N Level
CB
N Level
Minimum
N Level
VB
Maximum
Red LEDs
p-GaAsP region
N-GaAsP P = 40 %
N-GaAs substrate
Ohmic Contacts
Dielectric
(oxide or nitride)
Fig. GaAsP RED LED on a GaAs sub.
Isoelectronic Centre
CB edge
electrons
Isoelectronic
centre
dE
Electron-hole
recombination
Holes
VB edge
k=0
Electron-hole
recombination
electrons
dE
GaP : N
CB edge
electrons
Isoelectronic
centre
50 meV
dE
Electron-hole
recombination
Holes
VB edge
k=0
Blue LEDs
Blue LEDs
i-GaN
n + GaN
Sapphire
Substrate
(transparent)
Blue photons
Ohmic Contacts
Dielectric
(oxide or nitride)
Fig. Blue LED
Color Name
Wavelength
(Nanometers)
Semiconductor
Composition
Infrared
880
GaAlAs/GaAs
Ultra Red
660
GaAlAs/GaAlAs
Super Red
633
AlGaInP
Super Orange
612
AlGaInP
Orange
605
GaAsP/GaP
Yellow
585
GaAsP/GaP
Incandescent
White
4500K (CT)
InGaN/SiC
Pale White
6500K (CT)
InGaN/SiC
Cool White
8000K (CT)
InGaN/SiC
Pure Green
555
GaP/GaP
Super Blue
470
GaN/SiC
Blue Violet
430
GaN/SiC
Ultraviolet
395
InGaN/SiC
Material
Wavelength
(m)
Material
Wavelength
(m)
ZnS
ZnO
Gan
ZnSe
CdS
ZnTe
GaSe
CdSe
CdTe
0.33
0.37
0.40
0.46
0.49
0.53
0.59
0.675
0.785
GaAs
InP
GaSb
InAs
Te
PbS
InSb
PbTe
PbSe
0.84-0.95
0.91
1.55
3.1
3.72
4.3
5.2
6.5
8.5