SEMINAR PRESENTATION ON

MOVCD TECHNOLOGY

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MOCVD technology and material growth

1.Introduction
2.The MOVD technique and growth
system
3.Metalorganic compound
4.Gas phase and surface reaction
5.Materials Characterization
6.MOCVD growth of GaN

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 1.Introduction
• Most of the advances in semiconductor processing have
centered on the ability to decrease the physical dimensions
of the electronic device structure. 
• Lateral dimension
Photolithographic,
Deposition
Etching techniques…
• Vertical dimension:
Epitaxial deposition

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. The MOVD growth system

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 MOCVD Growth System

Reactor
Gas handle
system

Vacuum and
Exhaust system
Computer
Control

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MOVCD REACTORS

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Discretionary Access Control (DAC)

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Aixtron Model-2400 reactor

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 3. Metalorganic compound
• The vapor pressure of the MO source is an important
consideration in MOCVD, since it determines the concentration of
source material in the reactor and the deposition rate. Too low a
vapor pressure makes it difficult to transport the source into the
deposition zone and to achieve reasonable growth rates. Too high
a vapor pressure may raise safety concerns if the compound is
toxic. Further more, it is easier to control the delivery from a
liquid than from a solid.

• Vapor pressures of Metalorganic compounds are calculated in

terms of the expression
•  
– Log[p(torr)]=B-A/T
separately

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 4. Gas phase and surface reaction
• The basic reaction describe GaN growth can simply write as
• Ga(CH3)3+NH3 GaN+3CH4

• The growth procedure as follows:

• MO sources and hydrides inject to the reactor.

• The sources are mixed inside the reactor and transfer to the
deposition area
• At the deposition area, high temperature result in the
decomposition of sources and other gas-phase reaction, forming
the film precursors which are useful for film growth and by-
products.
• The film precursors transport to the growth surface
• The film precursors absorb on the growth surface
• The film precursors diffuse to the growth site
• At the surface, film atoms incorporate into the growing film
through surface reaction
• The by-products of the surface reactions absorb from surface
• The by-products transport to10the main gas flow region away from
the deposition area towards the reactor exit
reaction

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 5. Materials Characterization
• Physical characterization
• X-ray diffraction (XDS)
• Transmission electron microscopy (TEM)
• Optical microscopy
• Scanning electron microscopy (SEM)
• Atom force microscopy (AFM)
• Secondary ion mass spectroscopy (SIMS)

• Electrical Measurements
• Van der Pauw Hall
• Capacitance-voltage (C-V)

• Optical measurements
• Photoluminescence (PL)

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 6. MOCVD grow GaN and related
materials
TMGa

NH3

1150oC
1050oC

Temperature 550oC

High temperature Buffer Epilayer

treatment layer Growth

Ga(CH3)3+NH3 GaN+CH4

Two Step MOCVD Growth procedure

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Some basic problem related to GaN
growth
MOCVD and other epitaxial
techniques have developed more
than 30 years, but high quality GaN
and related compound only available
in recent years. There are some
special problems for GaN and related
materials.

•No suitable substrate

•Difficult to obtain p-type epilayer

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THANK YOU…

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