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Chapter 13

Memory Devices and


Systems

Memory Basics
Memory is used to store data or
instructions for a microprocessor unit
(MPU) system.
The stored data is organized in an array
of bits.
Bits are stored in locations called
addresses.
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Memory Types
RAM (random access or Read/Write
memory): Memory that can be written to or
read from in a random order (addresses).
ROM (read only memory): Memory that can
only be read from in a random order.
Sequential Memory: Memory that can be
written to or read from but only in a sequential
order (addresses).
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Memory Register 1
Simplest memory element is a D-type
flip-flop or latch.
An octal latch can be used to store a
byte of data.

Memory Register 2
When WRITEn (EN) goes low, then
high, the data on DATA_IN [7..0] is
latched into the register.
When READ is set to a 1, the latch data
output is enabled to DATA_OUT.
When READ = 0, the DATA_OUT lines
are tristated.
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Memory Register 2

Memory Register 2

Memory 4 x 8 (Write) 1
Uses four octal latches to store 4 bytes of
data at different addresses (see Figure 13.5
in textbook).
Instantiated as megafunctions based on the
LPM_LATCH.
8-bit tristate output instance of the
LPM_BUSTRI component.
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Memory 4 x 8 (Write) 2
A 2-to-4 decoder is used to select the
Latch (1 of 4) based on the address
input on ADDR[0..1].
The input data (to be written) is placed
on dat_in[0:7] and the address of the
byte on ADDR[0..1].
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Memory 4 x 8 (Write) 3
The WRITE signal is pulsed low to
select 1 of the 4 bytes and write the
data to that register.
None of the other registers has data
written into them.

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Memory 4 x 8 (Read) 1
Data from each latch is output to the
inputs of an octal (8-bit) 4-to-1
multiplexer.
The address inputs are applied to the
MUX select lines (ADDR[0..1]) to select
1 of the 4 data input bytes and transfer
it to the MUX output.
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Memory 4 x 8 (Read) 2
The data is then read by READ = 1 to enable
the tristate drivers and place the byte on
dataout.
Again the data from one and only one
address is read at a time.
If two or more were read simultaneously,
there would be bus contention.
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Memory 4 x 8 (Read) 2

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Memory Capacity
Memory size is specified by the address and
data size such as 4 (addresses) x 8 (data).
A 4 x 8 memory block stores 32 bits or 4
bytes with 1 byte = 8 bits.
Large memory devices use the designators K
(kilobits = 1024 bits), M (mega = 1048576
bits), or G (giga = 1073741824).
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Address Lines 1
A memory device of 8K x 8 (8 kilobits) would
require 13 address lines to address all
locations in the device (213 = 8192 = 8 x
1024).
The address of the first byte (13 bits of data)
is = 0 0000 0000 0000, the second byte is at
= 0 0000 0000 0001, and so on with the last
byte at address 8191 = 1 1111 1111 1111.
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Address Lines 2
A memory device covers a range of
addresses such as 0000H to 1FFFH
(given in HEX) for the 8K device.
All memory devices require address
lines to point to a location in the
memory array.
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Address Lines 3

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Address Lines 4

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Memory Control Lines 1


Memory devices require data lines
(depends on organization of arrays (bit,
nibble, byte)) and address lines
(depends on size of array).
Memory devices also require some
control lines to define the read or write
processes.
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Memory Control Lines 2


All memory devices have one (or more)
enable inputs such as chip enable (CE) or
chip select (CS).
The CS/CE line is used to enable the
memory to allow read or write data
transfers. (Usually Active Low
).
CS / CE
When it is a 1, the device cannot be
accessed.
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Memory Control Lines 3


RAM memory devices have a write (W or
WE) signal to allow data to be written TO
memory (if CS is active).
All memory devices have a read (G or OE)
signal to allow data to be read FROM
memory (if CS is active).
Some SRAM devices have a R/W signal,
does both.
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Memory Control Lines 3

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RAM Definitions 1
Volatile: A memory is volatile if its
stored data is lost when electrical power
is lost.
Static Ram (SRAM): Consists of arrays
of memory cells that are flip-flops. Data
is stored in a cell indefinitely until power
is turned off.
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RAM Definitions 2
Dynamic RAM (DRAM): Consists of
arrays of memory cells that are
capacitors. The data is stored as a
charged or discharged state on the
capacitor.
The capacitor can only hold the charge
for a short time (ms), and then it needs to
be refreshed.
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SRAM/DRAM Comparison
DRAMs have larger memory capacity. A
single DRAM = 256 MB, a DRAM
Module = 1 GB (for gigabyte).
DRAMs consume less board area.
DRAMs require refreshing and
multiplexed addresses.
SRAMs have faster access times.
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SRAM Memory Cell 1


Three basic SRAM cell technologies
are bipolar, NMOS, and CMOS.
All three types use cross-coupled
transistors to make up the basic flip-flop
storage cell.

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SRAM Memory Cell 2

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SRAM Memory Cell 3

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SRAM Memory Cell 4

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SRAM Memory Cell 5


In the basic NMOS cell, Q1 and Q2 are
always biased to act as a Load Resistor for
Q3 and Q4.
The Data in a cell can be read by setting
ROW_SELECT = 1 to turn on Pass
Transistors Q5, Q6.
The Data from cell is then passed to the
BIT Line and
Line.

BIT

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SRAM Memory Cell 6


To store a 0, place a 0 on the bit line
and set ROW_SELECT = 1.
This turns on the Pass Transistors (Q5,
Q6) to place a 0 to Q4 (it is off).
Q3 is then ON to store the 0.
A 1 can be stored in a similar fashion.
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SRAM Array Design 1


The cells are placed in a 512 row by
8192 column array.
The address buffer (enabled by CS 0 )
splits the address inputs (A0A18) for the
column and row decoders.

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SRAM Array Design 2

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SRAM Array Design 3


Columns are divided into groups of 8
bits (for a 1-byte output) for each read
or write operation.
The data in or out is provided on the
8-bit data bus on the array.

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DRAM Cells 1
Basic cell is a MOS capacitor (to store
charge) and a pass transistor.
Capacitor charge will leak and needs
to be refreshed every 8 to 64 ms
(depends on the size of the array).
Adds more complexity to read/write
cycles to allow refreshing.
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DRAM Cells 2

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DRAM Cells 3
Memory cells have fewer components
than a SRAM device.
This accounts for the higher densities
possible than with SRAM.

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DRAM Arrays 1
Most DRAM devices are bit organized
(a single bidirectional data pin) instead
of word (usually a group of 8 data pins)
in SRAM.
DRAMs use a multiplexed row and
column address inputs to the array to
save on pin count on the IC.
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DRAM Arrays 2
The multiplexed row and column
address inputs must be demultiplexed
to send to separate row and column
decoders for the array.
Two negative edge trigger controls are
used to latch addresses to the R/C
buffers.
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CAS/RAS
RAS (Row Address Strobe).
CAS (Column Address Strobe).

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CAS/RAS

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CAS/RAS Timing
Refer to Figure 13.15 in the textbook.
First the row address (usually lower
order address lines) are input and
loaded by the low pulse on RAS.
Then the column addresses are input
and loaded by a low pulse on CAS.
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ROM Basics
ROM is nonvolatile memory and it is
used to store firmware such as a PC
operating system (the BIOS).
Stores data that executes tasks that do
not change such as a Bootstrap
program for an MPU.
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ROM Array 1
First type of ROM is called a MASK ROM,
because the data is stored permanently
during the ROM manufacturing (or
fabrication).
A logic 0 is stored by connecting the drain
of the MOSFET to the column line.
MASK ROM now replaced by FLASH
memory.
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ROM Array 2

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ROM Array 3
A logic 1 is stored as an open
connection, it just floats to a 1.
The Row and Column Select Lines are
used to read data through the Sense
Amplifier.

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EPROM Basics
Erasable Programmable ROM: A ROM
that can be programmed (burned) by
the user and erased later by exposing it
to UV light.
It is nonvolatile and reprogrammable.
The basic structure of the EPROM cell
is based on the FAMOS FET.
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EPROM Programming 1
The FAMOS FET is a floating gate
avalanche MOSFET Gate.
An unprogrammed FAMOS cell has a low
threshold, so the transistor is turned ON to
store a logic 1.
The cell is programmed by a high energy
(12 V to 25 V) pulse on the row select to
raise threshold for a logic 0.
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EPROM Programming 2
The actual programming involves writing a
logic 0 to cells and leaving the others
unprogrammed (logic 1).
Erasing is done by exposure to UV light for
20 to 45 minutes.
This sets all cells to the unprogrammed
state (logic 1) by releasing electrons
trapped in the floating gate.
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Applications
EPROMs can be used for logic tables
and LUT for logic designs.
Figure 13.18 in the textbook shows how
to use an EPROM with a Digital-toAnalog Converter (DAC) to store
waveform data such as sine, ramp, or
triangle.
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EEPROM Basics 1
Electrically Erasable Programmable
ROM: A type of ROM that can be
reprogrammed and erased by a voltage
(not UV) in the circuit.
Similar in technology to the EPROM
with the FAMOS Cell.
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EEPROM Basics 2
The FAMOS FET is reprogrammed by a
Voltage Pulse on VPP.
The FAMOS FET used in the EEPROM
uses a thin oxide layer to allow
electrons to be driven out of the floating
gate (electrically).
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EEPROM Basics 2

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Comparison to SRAM
EEPROM has slower access times than
SRAM.
Smaller memory capacity than SRAM
and DRAM.
EEPROM has a fixed number of
write/erase cycles
( 100K ).
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Flash ROM 1
Flash ROM: Non-volatile memory
(similar to EEPROM) that can be
programmed and erased in sectors
rather than a byte at a time.
Sector: A segment of the flash memory
that forms the smallest unit that can be
erased or programmed at one time.
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Flash ROM 2
Boot Block: A sector in flash reserved
for primary firmware.
Top Boot Block: A boot block sector
placed at the highest address.
Bottom Boot Block: A boot block
sector placed at the lowest address.
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Flash ROM 3
Flash ROM is usually larger than
standard EEPROM (8 MB).
One sector in a Flash ROM is reserved
for PC Firmware called the Boot Block.
Not all sectors are the same size.

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Flash ROM 4
An example 512K x 8 flash is shown in Figure
13.20 in the textbook.
The sectors are shown as separate partitions
and it uses Bottom Boot Block.
The Boot Block S0 (16 KB) is from 0000 to
3FFF, the next sector S1 is 8 KB, S2 is 8 KB,
and S3 is 32 KB.
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Sequential Memory Basics 1


Sequential Memory: Memory in which
the stored data locations can NOT be
read from or written to in random order
(must be in sequential locations).

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Sequential Memory Basics 2


First In First Out (FIFO): A sequential
memory in which the stored data is read
out in the same order as it was stored,
such as a queue.
Last In First Out (LIFO): A sequential
memory in which the last data stored is
the first data read, such as a stack.
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Sequential Memory Basics 3

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Sequential Memory Basics 4

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LIFO 1
The most common use of a LIFO is for
stack memory in an MPU-based
system.
A special area in SRAM called the stack
is reserved for program use.

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LIFO 2
A stack pointer is used to keep track of
the stack memory address (location)
currently in use (it increments or
decrements).
The stack pointer is initialized to the top
of the stack.
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LIFO 3
As data values d, c, b, and a are stored
on the stack the pointer decrements to
the previous address.
As data values a, b, c, and d are read
from the stack the pointer increments.

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DRAM Modules 1
Most DRAM ICs are x4 or x8, but MPU
BUSSES are x32 or x64.
DRAM ICs are combined on DRAM
modules to expand the bus size to
accommodate the MPU, such as SIMM
or DIMM modules.
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DRAM Modules 2
Figure 13.22 in the textbook shows a
64M x 32 memory module constructed
of 4 64M x 8 DRAM ICs.
Uses a common CS to all 64M x 8
DRAM Devices and a 13 bit multiplexed
address (A0A13) for the 64 MB.
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SDRAM
Synchronous DRAM (SDRAM) data is
synchronously transferred to and from
the data bus by the clock.
Fastest memory in transferring data to
and from other components.
Double I/O transfer rate for the using
double data rate (DDR) SDRAM.
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Rambus Channel
Architecture uses a special bus layout.
Connects a number of DRAMs in a bus
called a Rambus channel.
Address pins multiplexed.
Controls for ROW and COLUMN select
carried on separate control busses.
Reduces data transfer time.
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Memory Systems 1
Address Space: A block of continuous
addresses in a memory system.
Memory Map: A diagram showing the
total address spaces of a memory
system and the placement of devices in
that space.
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Memory Systems 2
Address Decoder: A digital combinational
circuit that is used to enable specific
memory devices by the address bus in a
larger memory system.
The address decoder is used to generate
individual CS for each device to avoid bus
contention in the memory system.
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Memory Systems 3

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Memory Systems 4

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Memory Systems 5
The first SRAM (32K x 8) is in address
space 0000H - 7FFFH. The next SRAM
(32K x 8) is in space 8000H - FFFFH.
CS 0 A15 and CS 1 A15

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Example 13.4
The first SRAM (16K x 8) is in address
space 0000H - 3FFFH. The next SRAM
(16K x 8) is in space 8000 - BFFFH.
CS 0 A15 A14 and CS 1 A15 A14

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Example 13.4

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Example 13.4

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