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ET502

POWER ELECTRONICS
CHAPTER 1: OVERVIEW OF POWER
ELECTRONIC DEVICES

prepared by Norain

1.0 OBJECTIVE
To familiar with type of devices used in power
electronic.
To recognize the symbol and structure of each
devices.
To know the I-V characteristic of each devices.
To be able to explain the turn-on and turn-off
characteristic of each devices.
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POWER ELECTRONIC DEVICE

Thyristor

SCR

GTO

Transistor

TRIA
C

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BJT

FET

IGB
T

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1. SILICON CONTROLLED RECTIFIER (SCR)


SYMBOL AND STRUCTURE
Build from four layers of alternating P- type and N-type material.

1.1 SCR Symbol

1.2 SCR Structure

diagram
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Terminals of the SCR


Consist of 3 terminals : Anode, Gate and
Cathode
The control terminal, called the gate, is
attached to p-type material near to the
cathode.

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Alternatively, SCR also can be generated


using two- transistor model

1.3 Two-transistor model of a SCR


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THE REGENERATIVE ACTION USING TWOTRANSISTOR MODEL

When the gate current, IG, is zero, both transistors in the off state.
When a positive pulse of current (trigger) is applied to the gate, the
value is enough to on Q2 (VBE2=VG).
Current collector Q2 will increase and will on Q1 (IB1=IC2).
When Q1 on, IC1 will increase and also increase IB2.
IB2 at Q2 increase and it also increase IC2. This process is called
Regenerative Action where the current collector for each transistor
will increase and this will make the process continuous for each
transistor.
In this condition, we can assume that the SCR will on.
The collector current of Q1 provides additional base current for Q2, so
that SCR stays in conduction after the trigger pulse is removed from
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the gate.

1.4 THE V-I CHARACTERISTIC CURVE OF


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THE prepared
SCRby Norain

The SCR blocking voltage are:


(i) forward breakover voltage (VBO),
(ii) reverse breakdown voltage (VBD).
at gate current IG = 0, if forward voltage is applied on the
device there will be a leakage current.
If the voltage exceeds its critical limit or equal to forward
breakover voltage, (VBO) then SCR is ON-STATE.
By increasing IG, VBO is reduced, and if IG = IG3, SCR behaves
like a diode with the entire forward blocking region removed.
SCR will turn on successfully if a minimum anode current,
called a latching current (IL), is maintained.
During ON-STATE, if the IG =0 and the anode current (IA) falls
below a critical limit, called the holding current (IH), SCR
reach its forward blocking state.
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As the reverse voltage (VR ) across the SCR


increases from zero, only a small reverse current
(IR) will flow through the device due to leakage.
This current will remain small until VR becomes
large enough to cause the SCR to breakdown.
Then IR will increase rapidly if VR increases even
slightly above the breakdown point (the curve is
almost vertical and straight).
If too much reverse current is allowed to flow
through the SCR after breakdown occurs, the
device could be permanently damaged.
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Forward-breakover voltage,
This is the voltage at which the thyristor enters the forward-conduction
region.
Reverse-breakover voltage
It is the maximum reverse voltage value to stay in blocking state (off). If
the reverse voltage through thyristor is more than VRBO. This will
damage the P-N junction and causes reverse current unexpectedly flow.
Latching Current (IL)
The minimum anode current required to maintain the thyristor in the onstate immediately after switching from the off-state to the on-state has
occurred and the triggering signal has been removed.
Holding current
The minimum anode current necessary to keep the device in forwardconduction after it has been operating at a high anode current value.
Or
The minimum anode current required to maintain the thyristor in the onstate.
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Method to on SCR
1) Increase the forward biased voltage more or
equal to forward breakdown
2) Trigger positive supply when the device in
forward biased condition.(Gate control
method)
Gate control method have 3 types of trigger:
3) Trigger with DC signal
4) Trigger with AC signal
5) Trigger with beat signal
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Method to off SCR


1) Reducing anode current less then holding
current
2) Switch off the positive voltage supply at
anode.
3) Short anode and cathode.
4) Change the polarity of anode to negative.

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2. GATE-TURN-OFF (GTO)
SYMBOL AND STRUCTURE
Similar to SCR with 3 terminal: Anode, Cathode
and Gate.

2.1 GTO Structure diagram


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2.2 GTO symbol


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GTO I-V CHARACTERISTIC CURVE

2.3

THE I-V CHARACTERISTIC CURVE OF GTO


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TURN- ON GTO
The GTO thyristor can be turned ON by a
short pulse of positive gate current.

TURN-OFF GTO
GTO can be turned off by applying
negative pulse of approximate
amplitude at the gate terminal.

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3. TRIAC
SYMBOL AND STRUCTURE
Similar with SCR with extra features where it
can conduct current in two direction.

3.1 SCR Structure diagram


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3.2 SCR Symbol


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3.3 Equivalent circuit of TRIAC using 4 transistors and


2 SCRs

Operation of a triac can be related to two


SCRs connected in parallel in opposite
directions. Although the gates are shown
separately for each SCR, triac has a single
gate and can be triggered by either
polarity.
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If terminal MT2 is positive with


respect to MT1 , the triac can
be turned on by applying a
positive gate signal between
gate G and MT1.
If terminal MT2 is negative with
respect to MT1, the triac can be
turned on by applying a
negative gate signal between
gate G and MT1.
If operated in quadrant 1, it
needs a positive gate voltage
and current, while if operated in
quadrant III it needs a negative
gate voltage and current
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3.4 THE I-V


CHARACTERISTIC
CURVE OF TRIAC

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TURN- ON TRIAC
Applying forward bias voltage larger or
equal to the threshold voltage (Vfb >VT)
and a positive gate voltage
TURN-OFF TRIAC
Reducing the anode current below
holding current (IH)

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Power Transistors (PT)


PT have controlled turn-on and turn-off characteristics.
Used as switching elements (operated in the
saturation region)
Low on-state voltage drop.
Switching speed of transistors is higher than that of
thyristors.
Lower voltage and current ratings than thyristor.
Employed in DC-DC and DC-AC converters (provide
bidirectional current flow).
The PT can be classified into 5 categories: BJTs,
MOSFETs, SITs, IGBTs and COOLMOS.
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Classification of power transistor


Power
Transist
or
BJT

NPN

MOSFET

PNP

DMOSFET

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IGBT

EMOSFET

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BJT
Transistor is equivalent to having two pndiode junctions in opposite directions to
each other.
The two types of a transistor are termed
NPN-transistor and PNP-transistor.
The three terminals are named as
collector, emitter, and base.
A bipolar transistor has two junctions,
collector-base junction (CBJ) and baseemitter junction (BEJ).
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Structure Diagram & Symbol of BJTs

NPN-Transistor

PNP-Transistor

Structure

Symbol

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I-V Characteristics Curve


The characteristic of

BJT can be represent by


value of IB, IC and VCE as
illustrate in the fig
For a fixed IB, IC will

dependent to VCE, and


thus when VCE is
increase IC also
increase.
However the increment

of IC after the saturation


region is small
compared to the
increment of VCE
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Steady-state characteristics
Three are three operating regions of a transistor:
cutoff, active and saturation.
In the cutoff region
The transistor is off or the base current is not enough to
turn it on and both junctions are reverse biased.

In the active region


The transistor acts as an amplifier, where the base current
is amplified by a gain and the collector-emitter voltage
decreases with the base current.

In the saturation region


The base current is sufficiently high so that the collectoremitter voltage is low, and the transistor acts as a switch.
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TURN- ON BJT
Applying forward bias voltage to
the base-emitter junction and
reverse-biased to the basecollector junction
TURN-OFF BJT
When IB=0, the transistor is in the
cutoff region. BJT can be Turn- off
either by:
Applying reverse bias
Turning off power supply or switch
Reducing forward current less
then holding current (IH)
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MOSFET
A BJT is a current controlled device and requires base
current for current flow in the collector.
A MOSFET is a voltage controlled device and requires
only a small input current.
The switching speed is very high and the switching times
are of the order of nanoseconds.
MOSFETs do not have the problems of second breakdown
phenomena as do BJTs.
However, MOSFETs have the problems of electrostatic
discharge and require special care in handling.
Difficult to protect them under short-circuited fault
conditions.
The three terminals are called gate, drain and source.
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MOSFET
The two types of MOSFETs are: P-channel and the N-channel
MOSFET
Both the P-channel and the N-channel MOSFET is available in two
basic forms, the Enhancement type and the Depletion type.

Depletion
MOSFETs

Symbo
ls

Enhancement
MOSFETs

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MOSFET
The voltage VGS applied to the gate controls the
current flowing between the drain and the source
terminals.
VGS refers to the voltage applied between the gate
and the source.
VDS refers to the voltage applied between the drain
and the source.
Because a MOSFET is a VOLTAGE controlled device,
"NO current flows into the gate!" then the source
current (IS) flowing out of the device equals the
drain current flowing into it and therefore (I D=IS).
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I-V Characteristics Curve


The characteristic of

MOSFET can be
represent by value of
ID, VDS and VGS as
illustrate in in the fig
For a fixed VGS, ID will

dependent to VDS ,
and thus when VDS is
increase ID also
increase.
However the

increment of ID in the
saturation region is
small compared to
the increment of VDS
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Steady-state characteristics
There are three regions of operation: Cutoff, Pinch-off or saturation and
Linear region
In the Cutoff region
where VGS VT
In the Pinch-off or saturation regio
the drain current remains almost constant for any increase in the value
of VDS and the transistor are used in this region for voltage amplification.
In the Linear region,
the drain current ID varies in proportion to the drain-source voltage V DS
Due to high drain current and low drain voltage, the MOSFETs are
operated in the linear region for switching actions.
The pinch-off occurs at VDS = VGS VT

It should be noted that saturation has the opposite


meaning to that for bipolar transistors.
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IGBT
IGBT combines theadvantages of MOSFET
and BJT.
BJT has low power losses but have long
switching time (especially at turn off).
MOSFETs have very fast switching
characteristics (low turn on and turn off
times) but have higher power losses.
Thus an IGBT hasfast switching times like
MOSFET and low power losses like BJT.
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The symbol of the IGBT


The IGBT is a three terminal device.
The power terminals are called the emitter (E)
and collector (C), using the BJT terminology, while
the control terminal is called the gate (G), using
the MOSFET terminology.

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Output characteristics of IGBT


The i-v characteristics
appears qualitatively
similar to that of a logic
level BJT except that
the controlling
parameter is an input
voltage. The transfer
curve ic-vGE is identical
to that of the power
MOSFET except VGE(th)
and the slope values.

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TURN- ON IGBT
applying a positive gate voltage to
open the channel for n carriers
TURN-OFF IGBT
removing the gate voltage to close
the channel.

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Study other types of semiconductor devices

Draw the symbols of the

Diac,
Photo Diode,
Photo Thyristor,
Photo Transistor,
Optocoupler and
Programmable Unijunction Transistor (PUT).

Identify the terminals of devices.

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