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POWER ELECTRONICS
CHAPTER 1: OVERVIEW OF POWER
ELECTRONIC DEVICES
prepared by Norain
1.0 OBJECTIVE
To familiar with type of devices used in power
electronic.
To recognize the symbol and structure of each
devices.
To know the I-V characteristic of each devices.
To be able to explain the turn-on and turn-off
characteristic of each devices.
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Thyristor
SCR
GTO
Transistor
TRIA
C
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BJT
FET
IGB
T
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diagram
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prepared by Norain
When the gate current, IG, is zero, both transistors in the off state.
When a positive pulse of current (trigger) is applied to the gate, the
value is enough to on Q2 (VBE2=VG).
Current collector Q2 will increase and will on Q1 (IB1=IC2).
When Q1 on, IC1 will increase and also increase IB2.
IB2 at Q2 increase and it also increase IC2. This process is called
Regenerative Action where the current collector for each transistor
will increase and this will make the process continuous for each
transistor.
In this condition, we can assume that the SCR will on.
The collector current of Q1 provides additional base current for Q2, so
that SCR stays in conduction after the trigger pulse is removed from
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the gate.
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Forward-breakover voltage,
This is the voltage at which the thyristor enters the forward-conduction
region.
Reverse-breakover voltage
It is the maximum reverse voltage value to stay in blocking state (off). If
the reverse voltage through thyristor is more than VRBO. This will
damage the P-N junction and causes reverse current unexpectedly flow.
Latching Current (IL)
The minimum anode current required to maintain the thyristor in the onstate immediately after switching from the off-state to the on-state has
occurred and the triggering signal has been removed.
Holding current
The minimum anode current necessary to keep the device in forwardconduction after it has been operating at a high anode current value.
Or
The minimum anode current required to maintain the thyristor in the onstate.
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Method to on SCR
1) Increase the forward biased voltage more or
equal to forward breakdown
2) Trigger positive supply when the device in
forward biased condition.(Gate control
method)
Gate control method have 3 types of trigger:
3) Trigger with DC signal
4) Trigger with AC signal
5) Trigger with beat signal
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2. GATE-TURN-OFF (GTO)
SYMBOL AND STRUCTURE
Similar to SCR with 3 terminal: Anode, Cathode
and Gate.
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TURN- ON GTO
The GTO thyristor can be turned ON by a
short pulse of positive gate current.
TURN-OFF GTO
GTO can be turned off by applying
negative pulse of approximate
amplitude at the gate terminal.
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3. TRIAC
SYMBOL AND STRUCTURE
Similar with SCR with extra features where it
can conduct current in two direction.
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TURN- ON TRIAC
Applying forward bias voltage larger or
equal to the threshold voltage (Vfb >VT)
and a positive gate voltage
TURN-OFF TRIAC
Reducing the anode current below
holding current (IH)
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NPN
MOSFET
PNP
DMOSFET
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IGBT
EMOSFET
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BJT
Transistor is equivalent to having two pndiode junctions in opposite directions to
each other.
The two types of a transistor are termed
NPN-transistor and PNP-transistor.
The three terminals are named as
collector, emitter, and base.
A bipolar transistor has two junctions,
collector-base junction (CBJ) and baseemitter junction (BEJ).
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NPN-Transistor
PNP-Transistor
Structure
Symbol
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Steady-state characteristics
Three are three operating regions of a transistor:
cutoff, active and saturation.
In the cutoff region
The transistor is off or the base current is not enough to
turn it on and both junctions are reverse biased.
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TURN- ON BJT
Applying forward bias voltage to
the base-emitter junction and
reverse-biased to the basecollector junction
TURN-OFF BJT
When IB=0, the transistor is in the
cutoff region. BJT can be Turn- off
either by:
Applying reverse bias
Turning off power supply or switch
Reducing forward current less
then holding current (IH)
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MOSFET
A BJT is a current controlled device and requires base
current for current flow in the collector.
A MOSFET is a voltage controlled device and requires
only a small input current.
The switching speed is very high and the switching times
are of the order of nanoseconds.
MOSFETs do not have the problems of second breakdown
phenomena as do BJTs.
However, MOSFETs have the problems of electrostatic
discharge and require special care in handling.
Difficult to protect them under short-circuited fault
conditions.
The three terminals are called gate, drain and source.
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MOSFET
The two types of MOSFETs are: P-channel and the N-channel
MOSFET
Both the P-channel and the N-channel MOSFET is available in two
basic forms, the Enhancement type and the Depletion type.
Depletion
MOSFETs
Symbo
ls
Enhancement
MOSFETs
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MOSFET
The voltage VGS applied to the gate controls the
current flowing between the drain and the source
terminals.
VGS refers to the voltage applied between the gate
and the source.
VDS refers to the voltage applied between the drain
and the source.
Because a MOSFET is a VOLTAGE controlled device,
"NO current flows into the gate!" then the source
current (IS) flowing out of the device equals the
drain current flowing into it and therefore (I D=IS).
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MOSFET can be
represent by value of
ID, VDS and VGS as
illustrate in in the fig
For a fixed VGS, ID will
dependent to VDS ,
and thus when VDS is
increase ID also
increase.
However the
increment of ID in the
saturation region is
small compared to
the increment of VDS
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Steady-state characteristics
There are three regions of operation: Cutoff, Pinch-off or saturation and
Linear region
In the Cutoff region
where VGS VT
In the Pinch-off or saturation regio
the drain current remains almost constant for any increase in the value
of VDS and the transistor are used in this region for voltage amplification.
In the Linear region,
the drain current ID varies in proportion to the drain-source voltage V DS
Due to high drain current and low drain voltage, the MOSFETs are
operated in the linear region for switching actions.
The pinch-off occurs at VDS = VGS VT
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IGBT
IGBT combines theadvantages of MOSFET
and BJT.
BJT has low power losses but have long
switching time (especially at turn off).
MOSFETs have very fast switching
characteristics (low turn on and turn off
times) but have higher power losses.
Thus an IGBT hasfast switching times like
MOSFET and low power losses like BJT.
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TURN- ON IGBT
applying a positive gate voltage to
open the channel for n carriers
TURN-OFF IGBT
removing the gate voltage to close
the channel.
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Diac,
Photo Diode,
Photo Thyristor,
Photo Transistor,
Optocoupler and
Programmable Unijunction Transistor (PUT).
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