Mechanical Attrition

Mechanical attrition it is a top-down approach. The nanoparticles formed in

a
Mechanical devices are generally termed as mill.
Energy is imparted to bulk material to result in the reduction in particle size.
Nano particles if their averarge characteristic dimension is less than
100nm

Nanocrystalline if the crystalline size after milling is between 1 to 10 nm in

The
objective of the milling are
diameter

1.
2.
3.
4.
5.
6.
7.

Particle size reduction

Amorphization
Particle size growth
Shape changing
Agglomeration
Changing the properties of a material
Mixing or blending of two or more materials

Principles of milling

ciple - Size reduction in mechanical attrition devices lies in the energy imparted
sample during impacts between the milling media
1. Compaction starts with rearrangement and restacking of particles.

2. Elastic and plastic deformation

3. Particle fracture, resulting in deformation and

fragmentation of the particle. A continous
refinement
Of internal structure of the powder particles to
nm scale occur during high energy mechanical
attrition.
4. Formation of agglomeration

Different types of Attritor

mill

Shaker mill

Planetary mill

Parameter influence the size of the particle

1. Type of mill
2. Milling atomsphere
3. Milling medium
4. Milling temperature
5. Intensity of milling
6. Ball to powder ratio 5:10
7. Local temperature due to ball collision
8. Overall temperature of the vessel
9. The kinetic energy of the ball depends on
a. impact speed on the balls

Attritor mill

Etching

tching Removal of atoms or molecules from the surface of material. The remov
Atoms depend on the energy of atom or molecule.
This can be different ways
1. Electron beam etching
2. Ion beam etching
3. Laser beam etching
4. Corrosive chemical etching
5. Plasma etching

Ion beam etching

Electron beam
etching

Laser beam etching

Plasma etching

Molecular Beam Epitaxy

Epitaxy: Deposition and growth of monocrystalline
structures/layers.

Epitaxial growth results in monocrystalline layers

differing from deposition which gives rise to
polycrystalline and bulk structures.
Epitaxy types:
Homoepitaxy: Substrate & material are of same kind.
(Si-Si)
Heteroepitaxy: Substrate & material are of different
kinds. (Ga-As)

BE growth mechanism.

Atoms arriving at the substrate surface may undergo

absorption to the surface,
surface migration,
incorporation into the crystal lattice,
thermal desorption.
depends strongly on the temperature of the substrate..

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Growth
modes:
At
very high temperature of substrate, there are many different

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possible surface diffusion mechanisms:

epitaxial growth is ensured by very low rates of impinging atoms,

migration on the surface and
subsequent surface reactions

Ehrlich-Schwoebel barrier

Advantages

Disadvantages

Clean surfaces, free of an oxide layer

Expensive (106 $ per MBE chamber)

In-situ deposition of metal seeds,

ATG instability

semiconductor materials, and dopants

Low growth rate (1m/h)

Very complicated system

Precisely controllable thermal evaporation

Epitaxial growth under ultra-high vacuum

conditions

Seperate evaporation of each component

Substrate temperature is not high
Ultrasharp profiles

Implantation Processes:
Damage
Ion collides with lattice atoms and
knock them out of lattice grid
Implant area on substrate becomes
amorphous structure

Before Implantation
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After Implantation

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Stopping Mechanism

Ions penetrate into substrate

Collide with lattice atoms
Gradually lose their energy and stop
Two stop mechanisms

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Two Stopping Mechanism

Nuclear stopping
Collision with nuclei of the lattice
atoms
Scattered significantly
Causes crystal structure damage.

electronic stopping
Collision with electrons of the lattice
atoms
Incident ion path is almost unchanged
Energy transfer is very small
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Crystal structure
damage is negligible 12

Stopping Mechanism
The total stopping power
Stotal = Sn + Se
Sn: nuclear stopping, Se: electronic
stopping
Low E, high A ion implantation:
mainly nuclear stopping
High E, low A ion implantation,
electronic stopping mechanism is
more important

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Stopping Mechanisms
Ion

Random Collisions
(S=Sn+Se)

Channeling
(SSe)

Back Scattering (SSn)

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Stopping Power and Ion

Velocity

Stopping Power

II

III

Nuclear
Stopping
Electronic
Stopping

Ion Velocity
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Damage Process
Implanted ions transfer energy to
lattice atoms
Atoms to break free

Freed atoms collide with other lattice

atoms
Free more lattice atoms
Damage continues until all freed atoms
stop

One energetic ion can cause

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Lattice Damage With One

Ion
Light Ion

Damaged Region

Heavy Ion

Single Crystal Silicon

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Implantation Processes:
Damage
Ion collides with lattice atoms and
knock them out of lattice grid
Implant area on substrate becomes
amorphous structure

Before Implantation
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After Implantation

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Implantation Processes: Anneal

Dopant atom must in single crystal
structure and bond with four silicon
atoms to be activated as donor (Ntype) or acceptor (P-type)
Thermal energy from high
temperature helps amorphous atoms
to recover single crystal structure.
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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atom

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Thermal Annealing

Lattice Atoms

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Dopant Atoms

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Implantation Processes:
Annealing

Before Annealing

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After Annealing

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Rapid Thermal Annealing

(RTA)
At high temperature, annealing out
pace diffusion
Rapid thermal process (RTP) is
widely used for post-implantation
anneal
RTA is fast (less than a minute),
better WTW uniformity, better
thermal budget control, and
minimized the dopant diffusion

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