Monte Carlo Simulation

in Statistical Design Kit

Monte Carlo simulation in statistical design kit

Overview
1. Monte Carlo Simulation
2. Practical demonstration in Cadence
3. Simulation and Measurement

Monte Carlo simulation in statistical design kit

Monte Carlo Simulation

... allows the random variation of
- process parameters
- mismatch parameters
- process & mismatch parameters

Monte Carlo simulation in statistical design kit

Monte Carlo process simulation

Wafer production will
always show some
variation of technological parameters
The MC process
simulation is the
adequate tool to give
an early estimation
how it will affect the
circuits function.

Monte Carlo simulation in statistical design kit

Monte Carlo process simulation

For each simulation run a

new random set of process
parameters is generated and
is valid for all active and
passive components in the
circuit

...
dw_rpyhl_skew
rcs_rpyhl_skew
rsh_rpyhl_skew
a_wc_skew_nsic
a_be0_skew_nsic
r_nsu_skew_nsic
r_nbl_skew_nsic
r_ncx_skew_nsic
r_nci_skew_nsic
r_wb_skew_nsic
r_jbei_skew_nsi
c
r_nbei_skew_nsi
c
...

Monte Carlo simulation in statistical design kit

Monte Carlo mismatch simulation

Even optimum layout
cannot completely
avoid mismatch
between components.
The MC mismatch
analysis gives insight
in the effect of these
slight variations.

Monte Carlo simulation in statistical design kit

Monte Carlo mismatch simulation

For each device an
individual mismatch
random variable is
generated and is valid
only for a single run.
The mismatch property
can be set globally or
for selected devices
only.

Monte Carlo simulation in statistical design kit

Monte Carlo process & mismatch

simulation
In addition to the global random process
parameter set each device gets an
individual mismatch random variable.
This combined simulation will give an
estimation of a real wafer fabrication

Monte Carlo simulation in statistical design kit

Monte Carlo Tool

Demonstration

Monte Carlo simulation in statistical design kit

Testbench

Monte Carlo simulation in statistical design kit

Operational Amplifier V1

Monte Carlo simulation in statistical design kit

Opamp V1 Mismatch and Process Variation

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter Model Setup

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter Model Setup

Monte Carlo simulation in statistical design kit

Variation of Process Parameter with Corner Tool

Monte Carlo simulation in statistical design kit

Variation of
Process
Parameter
with
Corner
Tool

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter

Monte Carlo simulation in statistical design kit

Opamp V1 Mismatch and Process Variation

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 1:
Add base current compensation

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 1

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 2:
Add buffer stage

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 2

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 3:
Adjust bias current and
add cascode stage

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 3

Monte Carlo simulation in statistical design kit

Improvement in DC-Offset

Monte Carlo simulation in statistical design kit

Overview
DC-Offset

N = 1000 simulation runs

Simulation
MM

Proc

MM&Proc

before optimisation

3.82

22.77

24.94mV

after optimisation

1.16

0.09

1.16mV

Monte Carlo simulation in statistical design kit

Identify critical components and

process parameters
- Run sensitivity analysis
- MC Simulation with individual mismatch enable
- Perform correlation check after process simulation
in Monte Carlo Tool
- sweep of single process parameters

Monte Carlo simulation in statistical design kit

Rules of thumb for Design

Wide spread at Mismatch Simulation:
-> Increase area factor of critical components
Wide spread at Process Simulation:
-> Check circuit topology
e.g.: - add base current compensation
- add cascode or buffer stage

Monte Carlo simulation in statistical design kit

Simulation and
Measurement

Monte Carlo simulation in statistical design kit

Circuit Topology

Monte Carlo simulation in statistical design kit

First approach to
DC-Offset
compensation
with dummy stage

Monte Carlo simulation in statistical design kit

Results from first Silicon

First silicon of a test circuit did show a wide
spreading of DC offsets especially in high gain
mode.
The yield was unacceptable low :
DC offset voltages
Specification: +/- 20mV
First silicon : ~ 40mV (1-sigma)

Monte Carlo simulation in statistical design kit

Typical DC Offset Distribution (Wafer probing)

1-Sigma
38.7mV

Monte Carlo simulation in statistical design kit

Resimulation:

Mismatch & Process Variation

Monte Carlo simulation in statistical design kit

Redesign
Evaluation of the circuit without statistical models
is possible - but takes a lot of time.
Monte Carlo Analysis with new statistical design kit
provides a fast insight in the circuits behaviour at
mismatch and process variation.
The conformity of measurement and simulation is
rather good

Monte Carlo simulation in statistical design kit

Circuit improvements
- enlarge area factor at critical elements
- add base current compensation
- decrease current of differential amplifier to limit
influence of beta variation
- limit influence of early effect by cascode stages
and dummy amps
- revise the complete channel topology and
gain chain (omit dummy OP stage)

Monte Carlo simulation in statistical design kit

Redesign
without
dummy stage
but
OP design
improved

Monte Carlo simulation in statistical design kit

New Design:

Mismatch & Process Variation

Monte Carlo simulation in statistical design kit

Overview
DC Offset @ Opamp output

(300 simulation runs)

Simulation
Measurement
MM
First Design 13.6
New Design

6.3

Proc

MM&Proc

Wafer

32.9

32.9mV

38.7mV

0.8

5.9mV

Monte Carlo simulation in statistical design kit

More Information
[1]

Kraus, W. : PCM- and Physics-Based Statistical BJT

Modeling Using HICUM and TRADICA,
6th HICUM Workshop, 2006

[2]

Schrter, M., Wittkopf, H., Kraus, W. : Statistical

modeling of high-frequency bipolar transistors,
Proc. BCTM, pp 54 - 61, 2005