You are on page 1of 15

Power MOSFETs

Two Types
Depletion Type
Channel region is already diffused between the
Drain and Source
Deplete, or pinch-off the Channel

Enhancement Type
No channel region exists between the Drain and
Source
Invert the region between the Drain and Source
to induce a channel
1

Depletion MOSFET

N-Channel Depletion MOSFET

Normally Reverse-Bias the Gate-Source Junction

Enhancement MOSFET

N-Channel Enhancement MOSFET

The Gate-Source Junction will be Forward-Biased


The bias voltage must be greater than a threshold voltage
A Channel region is induced between the Drain and Source
5

Drain Characteristics

Steady-State Characteristics

Switching Characteristics

Equivalent Circuit

Switching Model

10

Switching Waveforms and Times

11

Turn-on Delay, td(on) = time to charge the input


capacitance to VT
Rise time, tr = Charging time to charge the input
capacitance to the full gate voltage, VGSP in order to drive
the transistor into the linear region of operation

12

Turn-off delay time, td(off) = time for the input capacitance to


discharge from overdrive voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge
from pinch-off to the threshold voltage.

13

i.
ii.
iii.

iv.
Cut-off region

MOSFET is a voltage controlled majority carrier device.


A MOSFET does not undergo second break down.
Unlike BJT the maximum forward voltage withstanding
capability of a MOSFET does not depend on the drain
current.
SOA of a MOSFET does not change under Forward and
Reverse bias conditions

Ohmic region
Active region
Characteristics Features
Modes of operation
POWER MOSFET

Advantages

(i) For similar voltage rating, a MOSFET


has a relatively higher conduction loss
and lower
switching loss compared to a BJT.
Therefore, MOSFETs are more popular
for high frequency (>50 kHz) low voltage
(<100 V) circuits.

Disadvantages

The gate oxide layer can be damaged by static charge.


r (ON) reduces with higher vgs. Therefore, to minimize
conduction power loss maximum permissible vgs
gs
should be used subject to dielectric break down
of the gate oxide layer.
DS
DS

14

SUMMARY

MOSFET is a voltage controlled majority carrier device.


A Power MOSFET has a vertical structure of alternating p and n layers.
The main current carrying terminals of an n channel enhancement mode MOSFET
are called the Drain and the Source and are made up of n+ type semiconductor.
The control terminal is called the Gate and is isolated form the bulk semiconductor by
a thin layer of SiO2.
p type semiconductor body separates n+ type source and drain regions.
A conducting n type channel is produced in the p type body region when a positive
voltage greater than a threshold voltage is applied at the gate.
Current conduction in a MOSFET occurs by flow of electron from the source to the
drain through this channel.
When the gate source voltage is below threshold level a MOSFET remains in the Cut
Off region and does not conduct any current.
With VGS> VGS(th) and VDS< (VGS VGS (th)) the drain current in a MOSFET is
proportional to VDS. This is the Ohmic region of the MOSFET output characteristics.

15