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OPTICAL AMPLIFIERS
Pumping of energy
Optical input
...
Optical output
...
amplification
medium
1 2 3 4 5 6 7 8
16
Pump Lasers
Standard Fiber
Able to amplify an
attenuated signal so that it can travel an additional
length of fiber, is called an optical line amplifier.
Preamplifier:
it is
placed right after the source, and thus may also be
integrated with it.
Pump Lasers
Standard Fiber
Booster
amplifier
35
30
preamplifier
25
60 mW
45 mW
30 mW
in-line
amplifier
20
15
10
-10
-5
10
Output power[dBm]
15
Booster
amplifier
Preamplifier
Improvement
in gain(dB)
Improvement Key
in length(km) technology
10 - 15
40 - 60
High efficiency
5 - 10 (APD)
10 - 15 (PIN)
15 - 30
20 - 40
40- 60
60 - 120
Low noise
In-line
amplifier
Remote pump 5 - 15
amplifier
30 - 60
Low noise
Supervisory
High pumping
power
WDM
Isolator
Output
Optical
Output
Er+3
PD
PD
PUMP
LASER
PUMP
LASER
When you actually look at an EDFA block diagram you see the input on the left
the output on the right, photo diodes to measure input and output power levels,
pump lasers which are used to excite this piece of erbium doped fiber to a
higher energy state, and 1550 light is allowed to pass through.
The isolators are used to keep the 980 and 1480 pump wavelengths contained in
the fiber but allow 1550nm light to pass through.
Erbium-doped Fibre
Amplifier
Gain, G (dB)
40
P
30
Input:
-30 dBm
-20 dBm
-10 dBm
20
10
1520
-5 dBm
1540
1560
1580
Wavelength (nm)
1540
1560
Wavelength (nm)
1580
EDFA Categories
In-line amplifiers
Installed every 30 to 70 km along a link
Good noise figure, medium output power
Power boosters
Up to +17 dBm power, amplifies transmitter
output
Also used in cable TV systems before a star
coupler
Pre-amplifiers
Low noise amplifier in front of receiver
Bi-directional amplifiers
An amplifier which work in both ways
EDFA Categories
Typical Design
Typical Design
Gain Flatness
Gain versus wavelength
The gain of optical amplifiers depends on wavelength
Signal-to-noise ratios can degrade below acceptable levels
(long links with cascaded amplifiers)
G
Compensation techniques
Signal pre-emphasis
Gain flattening filters
Additional doping of amplifier with Fluorides
Gain Competition
Total output power of a standard EDFA remains
almost constant even if input power fluctuates
significantly
If one channel fails (or is added) then the remaining
ones increase (or decrease) their output power
Output power
after channel
one failed
Equal power of
all four
channels
Raman Amplifier
Raman Amplifier was demonstrated in the 1980s
Unavailability of high-power diode laser pump
source
Why do you need it :
amplify signals from 1270 to 1670 nm
any optical fiber can serve as the amplifying
medium
Raman process itself provides high-power laser
Disadvantage: Cross-talk
Raman Amplifier
Amplifier Gain
Raman Amplifier
Raman Amplifier
Multistage Amplifier
Counter propagating pump
EDFA+Raman
Raman Amplifier
High-power laser sources are available by Raman
process itself.
200 to 400 nm Bandwidth Amplifiers are possible
Raman, EDFA combination
Flat gain for WDM
New fiber lasers and gratings make it practical
System with Terabits of capacity are possible
Semiconductor Optical
Amplifiers
Semiconductor Optical Amplifiers (SOAs)
Semiconductor
By adjusting the chemical composition of III-V
semiconductors (typically GaInAsP) the band gap can
be adjusted to give optical gain in the
telecommunications windows of interest. The devices
are typically 250mm long although devices of up to
1mm have been made. In general the longer devices
can achieve higher gain and wider bandwidths.
The optical bandwidth of a semiconductor optical
amplifier (SOA) can be as large as 100 nm and the
fact that the energy source is a DC electrical current
makes these devices look promising as optical
amplifiers.
Semiconductor
There are two aspects of their properties which has prevented their
widescale deployment. The SOA is fundamentally nonlinear as the
device refractive index and the device gain depend on the amount of
population inversion. Since this inversion changes as the signal is
amplified this leads to amplitude and phase changes being applied to
the signal. The short lifetimes of the device (100ps-1ns) also make
these effects apparent at the single pulse level and as a pattern
dependent effect.
The second problem is that the noise performance of these devices is
inferior to the Erbium fibre amplifier.
One final drawback is that the usual geometry of the semiconductor
waveguide is rectangular and the silica waveguide is circular. This leads
to a mismatch of the fundamental mode patterns and the typical loss in
going from one to the other is 3dB. Even so fibre to fibre gains of over
20dB can be achieved.
SOA operation
E
Conduction band
Optical transition
k
Valence band
SOA operation
The DC current applied to the device results in
electrons being pumped into the (normally empty)
conduction band and removed from the (normally full)
valence band. This creates the population inversion
which is a pre-cursor to optical gain. When signal
photons travel through the device they cause
stimulated emission to occur when an electron and
hole recombine.
The phase effects in these devices can be quite
strong with a gain change of 3dB corresponding to
roughly a phase change of p.