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Robert Parker, Kin Wong, Qi Hu, Farbod Ebrahimi, Pedram Khalili, Kang L. Wang
Motivatio
Background
RAP
TMR = 127%
No
10s
Treatment Oxygen
Treatment
95%
95%
96%
115%
Yield
Average
TMR
Standard
33%
Dev. of TMR
Standard
500 Ohm
Dev. of RP
11%
31%
214
Ohm
278 Ohm
Max TMR
121%
127%
155%
RP
Approach
Fabrication
Process
Photoresist
MTJ Film
100
Metal
Deposition
Photolithograph
y
Pillar Etching
Improvement in
Co/Fe/B-MgO
interface
M For Mo, device shows
o
no significant TMR at
500C
80
Photoresis
t
Photolithograph
y
60
Preliminary
40
Etching
SiO2 Deposition
10s Treatment:
Tightest
distribution
No Treatment:
Worst
Distribution,
most outliers
Effects of Oxygen
Treatment
magnetization state
20s
Oxygen
Treatment
95%
108%
SiO2
20
Photolithograph
y
SiO2 Etching
0
250
300
350
Au/Cr
400
450
500
550
Temperature (C)
Annealing (for
Mo and W
devices)
Metal
Deposition
700
Weaker switching
field indicates
weaker
perpendicular
anisotropy
Damaged
CoFeB
Mo Fixed
Layer
W Freelayer
Layer
600
500
400
160
No Treatment,
Rp
20s Oxygen, Rp
140
120
200
100
0
250
300
350
400
450
500
550
W Fixed Layer
Mo Free Layer
Temperature (C)
100
Summary
80
TMR (%)
60
40
20
0
0
500
1000
1500
2000
2500
Resistance (Ohms)
No Treatment
10s Oxygen
If RP and RAP
overlap, one
cannot
distinguish
between a 0 or
1 bit
Much less
overlap with
oxygen
treatment
Future
Work