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Elektronika Daya
Komponen Elektronika Daya
Teori Penyalaan
Appearance
PN junction
Direction of
inner electric field
-
p region
Space charge
Region
(depletion region,
potential
barrier region)
n region
+
+
+
+
W
WO
Effective direction
of electronic field
-
+
+
+
+
WO
W
19
-3
Na =10 cm
10m
14
Breakdown
Voltage dependent
19
250m
n + epi
Nd =10 cm
-3
n- substrate
-3
-3
Cathode
Nd =10 cm
UTO UF
Turn-off transient
IF
diF
dt
tF t 0
Turn- on transient
u
iF
i
UFP
trr
td
UF
tf
t1 t 2
diR
dt
IR
P
UR
P
UR
2V
0
uF
t fr
part number
VF(typical)
tr(max)
30A
400A
1.1V
2.2V
400ns
20s
8A
15A
100A
0.975V
1.2V
2.6V
35ns
6ns
60ns
60A
440A
30A
0.48V
0.69V
1.19V
Equivalent circuit
A
Equivalent
PNP
circuit
V
IA
P1
N1
N1
G
P2
P2
IG
Ic2
Ic1
NPN
V2
IK
N2
K
K
a)
b)
A
IA
PNP
V1
G
IG
S
Ic2
Positive feedback
R
Ic1
NPN
V2
IK
EG
K
EA
Trigger
Can not be turned off by control
signal
Half-controllable
I c1= 1 IA + I CBO1
I c2= 2 IK + I CBO2
IK=IA+I
IA=Ic1+Ic2
G
IA
IG ICBO1 ICBO2
1 (1 2 )
1-1
1-2
1-3
1-4
( 1-5 )
100%
90%
10%
0
u
td
tr
AK
I RM
t
t rr
URRM
tgr
Features
IC fabrication technology, fully- controllable, high frequency
Applications
Begin to be used in large amount in 1980s
GTR is obsolete and GTO is also seldom used today.
IGBT and power MOSFET are the two major power
semiconductor devices nowadays.
A
IA
PNP
V1
G
IG
S
Ic2
Ic1
NPN
V2
IK
EG
K
EA
Ic
Saturation region
Amplifying (active) region
i b3
i b2
i b1
i b1<i b2<i b3
cut-off region
O
Uce
Second breakdown
IB5
IB4
IB3
Active region
Primary
breakdown
IB2
IB<0
IB1
O
IB=0
IB=0
BVSUS
BVCEO
BVCBO UCE
Power MOSFET
p channel
Junction FET (JFET)
Basic structure
Symbol
D
G
S
N channel
S
P channel
iD
[UGS-VGS(th)=UDS]
Ohmic
VGS5
Active
VGS4
VGS3
VGS2
VGS1
O
Cut off
BVDSS
VGS< VGS(th)
UDS
+U E
RL
iD
Rs
up
RG uGS R D
F i
up
O
uGS
uGSP
uT
O
iD
O td(on)
Turn- on transient
Turn- on delay time td(on)
Rise time tr
tr
td (off) tf
60V
100V
100V
100V
400V
400V
500V
1000V
50A
5.6A
28A
75A
10A
15A
23A
11A
Ron
Qg(typical)
0.018
110nC
0.54
0.077
0.025
0.55
0.3
0.25
1.0
8.3 nC
72 nC
171 nC
63 nC
8.3 nC
110 nC
83nC
150 nC
IGBT
Features
On- state losses are much smaller than
those of a power MOSFET, and are
comparable with those of a GTR
Easy to drive similar to power
MOSFET
Faster than GTR, but slower than power
MOSFET
Structure and operation principle of
IGBT
Also multiple cell structure Basic structure
similar to power MOSFET, except extra
p region On- state: minority carriers
are injected into drift region, leading to
conductivity modulation
compared with power MOSFET: slower
switching times, lower on- resistance,
useful at higher voltages (up to 1700V)
Emitter Gate
G
E
N+ P N+ N+ P N+
J3 J2 NN+
+
J1 P
C Collector
Drift region
Buffer layer
Injecting layer
+
V
J1
R
ID N
+- Drift region
G
+ resistance
IDRon
E
C
IC
C
G
E
UGE
90%UGEM
10%UGEM
0
IC
90%ICM
10%ICM
0
UCE
UGEM
ICM
td(on) t r
td(off)
tf
t fi1 t fi2
ton
toff
UCEM
t fv1
current tail
t fv2
UCEon
part number Rated max voltage Rated avg current VF(typical tf(typical)
Single-chip devices
600V
HGTG32N60E2
1200V
HGTG30N120D2
multiple-chip power modules_
600V
CM400HA-12E
1200V
CM300HA-24E
32A
30A
400A
300A
2.4V
3.2V
0.62s
0.58s
2.7V
2.7V
0.3s
0.3s
8.3 nC
SCR / Thyristor
Circuit Symbol and Terminal Identification
ANODE
GATE
SCR
2N3668
CATHODE
SCR / Thyristor
Anode and
Cathode terminals
as conventional
pn junction diode
ANODE
GATE
SCR
2N3668
CATHODE
SCR/ Thyristor
An SCR (Thyristor) is a controlled
rectifier (diode)
Control the conduction under forward
bias by applying a current into the
Gate terminal
Under reverse bias, looks like
conventional pn junction diode
SCR / Thyristor
Anode
4-layer (pnpn)
device
Anode, Cathode as
for a conventional
pn junction diode
N
Gate
P
Cathode Gate
brought out for
controlling input
Cathode
ANODE
Equivalent Circuit
ANODE
P
Q1
N
GATE
BJT_PNP_VIRTUAL
Q2
GATE
BJT_NPN_VIRTUAL
N
CATHODE
CATHODE
Apply Biasing
Variable
50V
IF
ANODE (A)
Q1
IC2=IB1
BJT_PNP_VIRTUAL
GATE (G)
IC1 = IB2
Q2
BJT_NPN_VIRTUAL
IF
CATHODE (K)
Volt-Ampere Characteristic
IF
Holding Current IH
VBR(F)
VAK
Breakdown Voltage
Variable
50V
Turn Q2 ON by applying a
current into the Gate
ANODE (A)
IF
IC2 =
IB1
Q1
BJT_PNP_VIRTUAL
GATE (G)
IB2
Q2
BJT_NPN_VIRTUAL
CATHODE (K)
IF
R
25kOhm
Key = a
Vs
170V
120.21V_rms
60Hz
0Deg
D1
2N1776
Rload
15ohm
C
0.01uF
60%
Power MOSFETs
(high-speed, voltage-controlled switches that
allow us to operate above the 20kHz audible
range)
D: Drain
If desired, a series
blocking diode can
be inserted here to
prevent reverse
current
G:
Gate
S:
Source
Switch closes
when VGS 4V,
and opens when
VGS= 0V
MOSFET of
when VGS = 0V
50
VDS(t)
I(t)
to
I(t)
ton
PLOSS(t)
PLOSS(t)
51
V I tof ,
so we want to keep turn
of (and turn on) times
as small as possible.
0
I(t)
I
to
0
PLOSS(t)
0
Energy
lost per
f
turn of
52
dt
dt
dt
53
GATE
COLLECTOR
NGATE
N+
P+
COLLECTOR
Structure Of IGBT
EMITTER
Equivalent Circuit
55/45
What`s a IGBT ?
COMPARISON TABLE
T R
IGBT
MOSFET
CURRENT
VOLTAGE
VOLTAGE
CONTROL POWER
HIGH
LOW
LOW
CONTROL CIRCUIT
COMPLEX
SIMPLE
SIMPLE
LOW
LOW
HIGH
SWITCHING SPEED
SLOW
MEDIUM
FAST
SWITCHING LOSS
HIGH
MEDIUM
LOW
ITEM
SYMBOL
CONTROL PARAMETER
ON-RESISTANCE
56/45
Descriptions
Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)
Maximum voltage applicable between G-E
Maximum DC current can flow into the collector. Indicated by radiation condition (ex:
TC=25C)
Maximum Peak current can flow into the collector. Indicated by current pulse
width(ex:10s) and Duty-cycle(ex:below 1%), and Radiation condition.
Allowable collector loss and maximum current consumption.
In usual case, at the temperature of TC (ex : 25C), the thermal resistance
PC (max)
Tj(max) - TC
Rjc = ---------------------
FBSOA
SCSOA
Thermal Resistance
Descriptions
Symbol
RJ-C(I)
RJ-C(F)
RC-S
Electerical Characteristics
Symbol
BVCES
VGE(th)
ICES
IGES
Descriptions
Symbol
Descriptions
59/45
25 KW
10
GTO
POWER
HIGH FREQUENCY
1
IGBT
BJT
MOSFET
0.1
1
70
FREQUENCY
1000KHZ
60/45
Power Loss
= Switching Loss + Conduction Loss
Switching Loss = Turn On Loss + Turn Off Loss
Vce
Ic
Vce(sat)
Off Time
Turn On
Time
On Time
Leakage Current
Turn Off
Time
Off Time
Conduction Loss
Turn On
Loss
Turn Off
Loss
61/45
Vce