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The Transistor
(Electronic Valves)
First Transistor
Type of Transistors
BIPOLAR JUNCTION
TRANSISTORS
Basic types
NPN
PNP
Symbol
collector
collector
base
base
emitter
collector
NPN
An NPN transistor uses a positive semiconductor
material
(P-type) for the base and negative semiconductor
material (N-type)for the collector and emitter.
On a circuit diagram, and NPN transistor shows an
emitter with the arrow pointing out (Never Points
npn-BJT Structure
PNP
A PNP transistor uses an N-type material for the
base and P-type material for the emitter and
collector.
The PNP transistor show an emitter with the arrow
pointing in (Points IN Permanently).
npn-BJT Structure
The npn version of the BJT consists of two n
regions separated by a p region (as the name
suggests). A schematic of an npn transistor is
shown.
n-type
p-type
n-type
Inside look
A
A
A
A
A
Inside look
e-
e-
P
base
collector
conducting
N
emitter
forward bias
e-
Inside look
no-conducting
N
e-
base
collector
emitter
reverse bias
e-
Current Directions
(Convention)
We define currents directions such that the
collector current (IC) and base current (IB) flow
into the device whereas the emitter current (IE)
flows out of the device.
THIS IS IMPORTANT; we shall shortly treat the
transistor as a current node and write
IC + IB = IE (Kirchhoff)
IE = IB + IC
(KCL)
BJT Operation
E
(n)
B
(p) C
B (n)
BJT Operation
The forward bias between the base and
emitter injects electrons from the emitter
into the base and holes from the base into
the emitter.
As the emitter is heavily doped and the
base lightly doped most of the current
transport across this junction is due to the
electrons flowing from emitter to base.
BJT Operation
BJT Operation
BJT Operation
The electrons collected by the collector at the
C-B junction essentially form the collector
current in the external circuit.
There will also be a small contribution to
collector current, called ICO, from the reverse
saturation current across the CB junction.
BJT Operation.
The Critical Knowledge!
The (relatively large) collector current is
directly controlled by the (much smaller) base
current.
This is further illustrated and clarified in
the following discussions of the BJTs
current-voltage characteristics.
BJT Circuits
Most electronic devices take the signal between
two input terminals and deliver from it an output
signal between two output terminals.
The BJT has only three terminals so one of these is
usually shared (i.e. made common) between input
and output circuits.
We thus talk about common emitter (CE), common
base
(CB)
and
common
collector
(CC)
configurations.
Basic single-stage
Common base
configuration
IE Input
Current
=
IC Output Current
=
Common Collector
configuration
Ib Input
Current
=
IE Output Current
=
Common Emitter
configuration
Ib Input
Current
=
IC Output Current
=
Current Gain
Current
Gain
IE = Ic + Ib
I c IE
:1
This configuration is not use to current Amplifier
circuits. Because the current gain is 1 .
Current
Gain
IE = I c + I b
IB = Ic Ib = Ic / (Ic - IE)
Ic I E
: >>>1
This configuration is commonly use to current Amplifier
circuits. Because the current gain is >>> 1 .
Current
Gain
IE = I c + I b
IB = Ic Ib = IE / (Ic - IE)
IE >>> Ib
: >>>1
This configuration is commonly use to current Amplifier
circuits. Because the current gain is >>> 1 .
Voltage Gain VG
Voltage
Gain
VG
IE = I c + I b
Ic I E
:1
Characteristic
Input Characteristics
Output Characteristics
Transition Characteristics
Gain = 300
Switch
Amplifier
330
1000
330
1000
330
9V
1.5V
1000
330
9V
1000