LED CHARATERISTICS

S. RAJALAKSHMI
AP (SR), SENSE
VELLORE

LED output characteristics

 Led- linear device, used for analog

transmission.
led also has non linearity's, to reduce it
use predistrotion linearization and
negative feedback.
Surface LED has more optical power
than Edge LED
Both surface and edge are linear with
moderate drive currents

 Internal eff decrease with increase in

temp
Light output decreases as pn junction
temp increases.
Superluminence led strong
dependent on temp
Edge more depend on temp than
surface led

 Super lumni lednon linear nature

observed after knee temp at 20.C
use thermoelectric coolers.
Max quantum eff of 2.8% at 15.c for
200 microm long RC led at 0.66
microm wavelength is reduced to 1%
as temp increases to 75.c

Output spectrum

 Led0.8 to 0.9 m spectral linewidth ranges from

25 to 40nm of FWHM.
Small BG energy led-1.1 to 1.7 m linewidth
increases from 50 to 160nm.
Linewidth increase due to increase inn doping and
bandtailing states.
SLED-heavily doped active layer
ELED lightly doped active layer
Reduction in doping ---shifts the peak emission
wavelength to lower region
FWHM points 1.6 times smaller fro ELED than SLED

Temp depend of spectral

linewidth
With increase in tempoutput spectra
tends to broaden at the rate of 0.1 to
0.3 nm/ C .
Temp increase effects the peak
emission wavelength
For AlGaAs 0.3 to 0.4 nm/ C it is
shoifted by temp.
Use heat sink to avoid temp related
problems.

Modulation bandwidth

led Reliability

Super luminescent LED

SLD
SLD--is an edge-emitting semiconductor light source
based on superluminescence.
It combines the high power and brightness of
laser diodes with the low coherence of conventional
light-emitting diodes.
Its emission band is 5100nm wide.
SLCD advantages high output power, directional output
beam, narrow spectral width, useful for coupling light
into fiber.
SLD increases the device modulation bandwidth more
than SLED and ELED.
2 from of construction of SLD
requires a pn junction in form of long rectangular stripe.
Ridge waveguide or a BH

one end is made optically lossy to prevent reflections

SLD operation

Injection current increases up to

simulated emission, amplification
occurs, but high loss at one end, no
optical feedback takes place, hence
no laser oscillation builds up.
High Output optical power increase
with increase in drive current due to
the single pass, when operated in
current amplification stimulated
region.
It also obtains narrow spectral width.

 Fig (a) employs stipe with absorbing region

at one end to suppress laser action.
They provide peak output power of 60mW
at 0.87 m.
Antireflection coatings applied to the
cleaved facets to suppress the resonance.
They produce 550W power in multimode
GIF of 50 m dia and drive current of
250mA.
250 W into SMF using current of 100mA .
In both construction devices line width is
30 to 40 nm instead of 60 to 90 nm

 Fig (b) operation

It emits at 1.3 m has buried active layer within
a V shaped groove on the p type InP substrate.
The structure provides high power operation,
becoz of low leakage current.
Light diffusion surface is applied within the device
diagonally on the active layer of length of 350m,
serves to scatter the backward light emitted from
active layer to decrease feedback.
In addition AR coating is provided on output facet,
since perfect AR coating is not possible to
achieve.
spectral distribution has smooth envelope with
an FWHP of 30nm and device modulation reached
350MHz at 1.5 B point

 High current density around 3 time is

required to obtain coherent light, due to
long device active length.
Disadvantages
Non linearity output charat.
Increased temp depend on output power
Spectrally broad output power(20 to 150nm)
used as broadband optical source

SLD operate at1.16 to1.33 m or 1.52 to

1.57 m.
Output signal power 4 to 5 times larger
(8mW)than conventional ELED, used for
spectrally sliced channels in WDM systems.