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CIRCUITS
Name :
Gurjinder Kaur
Designation:
Lecturer
Department:
College:
UNIT-I
IC FABRICATION
INTEGRATED CIRCUITS
An integrated circuit (IC) is a miniature ,low
cost electronic circuit consisting of active and
passive components fabricated together on a
single crystal of silicon. The active components are
transistors and diodes and passive components are
resistors and capacitors.
1.
2.
3.
4.
5.
6.
7.
1.
2.
3.
4.
5.
6.
7.
8.
9.
Typical wafer
1.
2.
10
Photo etching
Photo etching is used for the removal of SiO2
from
desired
regions
so
that
the
desired2impurities can be diffused
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12
1.
2.
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15
1.
2.
3.
4.
It is a good conductor
it is easy to deposit aluminium films using vacuum
deposition.
It makes good mechanical bonds with silicon
It forms a low resistance contact
16
1.
2.
3.
17
UNIT-II
Characteristics of Op-Amp
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19
+5v
Non-inverting input
2
inverting input
0utput
4
-5v
20
1.
2.
3.
4.
5.
6.
7.
21
O U T
R
IN
R1
22
Vout= (1+Rf/R1)Vin
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24
25
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27
28
THERMAL DRIFT
Bias current, offset current and offset voltage
change with temperature. A circuit carefully nulled at
25oc may not remain so when the temperature rises to
35oc. This is called drift.
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Frequency Response
Frequency Response
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UNIT-III
Applications of Op Amp
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1.
2.
3.
4.
5.
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40
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1.
2.
Window detector
3.
4.
Phase detector
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Circuit
Output waveform
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VUT
Vsat R2
Vsat R2
; VLT
R1 R2
R1 R2
R1 2 R2
Assuming
|+Vsat| = |-Vsat| T t1 t 2 2 ln
R1
Circuit
Waveforms
56
R f C lnpulse
0.6 V through Rf. Width oft p timing
is:
| V | V
sat
LT
57
Type of Filter
1. Passive filters
2. Active filters
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60
1.
2.
3.
4.
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1.
2.
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UNIT-IV
Special ICs
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1..
2.
3.
modes:
68
1.
.
2.
3.
4.
5.
6.
7.
8.
9.
astable multivibrator
monostable multivibrator
Missing pulse detector
Linear ramp generator
Frequency divider
Pulse width modulation
FSK generator
Pulse position modulator
Schmitt trigger
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A(dB)
A(dB)
LPF
A(dB)
HPF
BPF
Passband
A(dB)
fc
fc
fcl
fcu
A(dB)
Butterworth
BRF
Chebyshev
Bessel
fcl
fcu
f
78
2-pole
3-pole
4-pole
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81
2-pole
3-pole
4-pole
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83
2-pole LPF
Same value R & same value C
are used in filter.
Select C (e.g. 0.01 F), then:
1
R
2f o C
2-pole HPF
Av for # of poles is given in
a table and is the same for
LP and HP filter design.
RF
Av
1
RI
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85
BRF
Attenuation (dB)
Attenuation (dB)
BPF
fcl
f ctr
fctr
f ctr
Q
BW
f cu f cl
86
fcu
f cl
BW 2
BW
2
f ctr
; f cu
4
2
BW 2
BW
2
f ctr
4
2
87
f ctr
1
BW
Q
2R1C
C1 = C2 = C
R2 = 2 R1
R1
R3
2Q 2 1
f ctr
1
R1
1
R3
2 2R1C
The equations for R1, R2, R3, C1, and C2 are the same as before.
RI = RF for unity gain and is often chosen to be >> R1.
90
UNIT-V
APPLICATION ICs
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92
LM 723C Schematic
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94
Design equations:
Vo
Vref ( R1 R2 )
R2
R1 R2
0.7
R3
Rsens
R1 R2
I max
Choose R1 + R2 = 10 k,
and Cc = 100 pF.
To make Vo variable,
replace R1 with a pot.
95
I L (max)
R 4 Vo 0.7(R 4 R 5 )
R 5 R sens
I short
R sens
With external pass transistor
and foldback current limiting
R 2 Vref
Vo
R1 R 2
0.7(R 4 R 5 )
R 5 R sens
0.7 Vo
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99
0 .7
R1
I max
0.7
R2
I R2
Vo Vreg
Vreg
I Q R2
R1
or
It is used to obtain an
output > the Vreg value
up to a max.of 37 V.
R1 is chosen so that
R1 0.1 Vreg/IQ, where
IQ is the quiescent
current of the
regulator.
R1 (Vo Vreg )
R2
Vreg I Q R1
101
(a)
Circuit with capacitors
to improve performance
(b)
Circuit with protective
diodes
103
Vo Vref
I adj R2 the current flowing into the adj.
R1
Advantages:
70-90% efficiency (about double that of linear
ones)
can make output voltage > input voltage, if
desired
can invert the input voltage
considerable weight and size reductions,
especially at high output power
Disadvantages:
More complex circuitry
Potential EMI problems unless good shielding,
low-loss ferrite cores and chokes are used
107
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109
110
111
fo
3(VCC Vsweep )
2 RC1Vtotal
where R = RA = RB
If pin 7 is tied to pin 8,
fo
RA
5 RAC1 1
2 RA RB
fo
0.3
RC1
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113
Purposes
To break ground to permit incompatible circuits
to be interfaced together while reducing noise
To amplify signals while passing only low
leakage current to prevent shock to people or
damage to equipment
To withstand high voltage to protect people,
circuits, and equipment
114
115
117
Applications
Inter- and intra-chip optical interconnect and clock
distribution
Fiber transceivers
Intelligent sensors
Smart pixel array parallel processors
118
Approaches
Conventional hybrid assembly: multi-chip
modules
Total monolithic process development
Modular integration on ICs:
epitaxy-on-electronics
flip-chip bump bonding w. substrate removal
self-assembly
119
General Description
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