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Transistors
Motorola MC68020
Polysilicon Aluminum
Gate Oxide
Gate
Polysilicon Field-Oxide
Source Drain
(SiO2)
n+ n+
p+ stopper
p-substrate
Bulk Contact
| VGS | Gate
Source Drain
(of carriers) (of
carriers)
| VGS | Gate
Source Drain
(of carriers) (of carriers)
G G
S S
Channe
NMOS Enhancement NMOS Depletion l
D D
G G B
S S
Symbol
L = 0.5-10 m
W = 0.5-500 m
http://micro.magnet.fsu.edu/electromag/java/transistor/index.html
It is done. Now, how does it
work?
n-channel MOSFET Basic Operation
Operation in the Cutoff region
pn junction:
reverse bias
iD=0
for vGS<Vt0
Schematic
For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region
i D K 2 v GS Vt 0 v DS v DS
2
W KP
K
L 2
Device parameter KP for
NMOSFET is 50 A/V2
n-channel MOSFET Basic Operation
Operation in the Saturation Region (vDS is increased)
Tapering
of the
channel
- increments
of iD are
smaller
when
vDS is
larger When vGD=Vt0 then the channel
thickness is 0 and
i D K v GS Vt 0
2
n-channel MOSFET Basic Operation
Example 12.1
Example 12.1
Characteristic
Channel length i D Kv DS
2
modulation
id depends on vDS in
saturation region
(approx: iD =const in
saturation region)
p-channel MOSFET Basic Operation
It is constructed by interchanging the n and p regions of n-
channel MOSFET.
Symbol
Characteristic