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Electronic Devices

Ninth Edition

Floyd

Chapter 11

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

Thyristors

Thyristors are a class of semiconductor devices characterized


by 4-layers of alternating p- and n-material. Four-layer
devices act as either open or closed switches; for this reason,
they are most frequently used in control applications.
Some thyristors and their symbols are

(a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

Thyristors

The concept of 4-layer devices is Anode


usually shown as an equivalent circuit of pn junction 1
a pnp and an npn transistor. Ideally, Q1
these devices would not conduct, but
when forward biased, if there is pn junction
2
sufficient leakage current in the upper
Q2
pnp device, it can act as base current to
the lower npn device causing it to
pn junction 3
conduct and bringing both transistors
Cathode
into saturation.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Four-Layer Diode

The 4-layer diode (or Shockley diode) is a type of


thyristor that acts something like an ordinary diode but
conducts in the forward direction only after a certain anode
to cathode voltage called the forward-breakover voltage is
reached.
The 4-layer diode has two leads, labeled the Anode (A) A

anode (A) and the cathode (K). The symbol p


reminds you that it acts like a diode. It does n
1

not conduct when it is reverse-biased. p


2

3
n

Cathode (K) K

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Four-Layer Diode

The characteristic curve for a 4-layer diode shows the


forward blocking region. When the anode-to-cathode
voltage exceeds VBR, conduction occurs. The switching
current at this point is IS.
IA
Once conduction begins, it
will continue until anode Forward-
conduction
current is reduced to less than On region
the holding current (IH). This IH
IS
is the only way to stop Off Forward-
VAK blocking
0 VBR(F)
conduction. region

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
A

The SCR

The SCR had its roots in the 4-layer diode. By


adding a gate connection, the SCR could be
G
triggered into conduction. This improvement made
a much more useful device than the 4-layer diode.
K
The SCR can be turned on by
IA
exceeding the forward
breakover voltage or by gate IG2 > IG1 IG1 > IG0 I = 0
I H0
current. Notice that the gate G0

I H1
current controls the amount
I H2
of forward breakover voltage VR VF
0 VBR(F 2) VBR(F1) VBR(F0)
required for turning it on. IR

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The SCR

Like the 4-layer diode, the SCR will conduct as long as


forward current exceeds IH. There are two ways to drop the
SCR out of conduction: 1) anode current interruption
and 2) forced commutation. +V
Anode current can be interrupted by breaking the anode
current path (shown here), providing a path around the SCR,
IA = 0
or dropping the anode voltage to the point that IA < IH.
Force commutation uses an external circuit to momentarily RA

force current in the opposite direction to forward


conduction.
SCRs are commonly used in ac circuits, which forces the G

SCR out of conduction when the ac reverses.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

SCR Specifications

Three important SCR specifications are:


Forward-breakover voltage, VBR(F): IF
This is the voltage at which the SCR Characteristic
enters the forward-conduction region. for IG = 0
Forward-
Holding current, IH: This is the value of conduction
region (on)
anode current below which the SCR for IG = 0
switches from the forward-conduction IH
VBR(R)
region to the forward-blocking region. VR
0 VBR(F)
VF

Gate trigger current, IGT: This is the Reverse-


blocking Forward-
Reverse- blocking
value of gate current necessary to switch avalanche
region
region (off)
region
the SCR from the forward-blocking
region to the forward-conduction region IR
under specified conditions.
Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

SCR Applications

SCRs are used in a variety of power control applications.


One of the most common applications is to use it in ac
circuits to control a dc motor or appliance because the
SCR can both rectify and control.
The SCR is triggered on the I
positive cycle and turns off on R1
A
the negative cycle. A circuit
R2
like this is useful for speed R4
R3
control for fans or power tools
B
and other related applications. M

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

SCR Applications

Another application for SCRs is in crowbar circuits


(which get their name from the idea of putting a crowbar
across a voltage source and shorting it out!)
The purpose of a crowbar SW Fuse

circuit is to shut down a power


DC
supply in case of over-voltage. power supply
VOUT

Once triggered, the SCR


D1
latches on. The SCR can
handle a large current, which D2
VTRIG
R1

causes the fuse (or circuit R2


R3
breaker) to open. "Crowbar circuit"

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
A1

The Diac

The diac is a thyristor that acts like two back-to-back


4-layer diodes. It can conduct current in either
direction. Because it is bidirectional, the terminals are A2

equivalent and labeled A1 and A2. I F

The diac conducts current after the


breakdown voltage is reached. At that
point, the diac goes into avalanche IH
conduction, creating a current pulse VR
VBR(R)
VF
0 VBR(F)
sufficient to trigger another thyristor (an IH

SCR or triac). The diac remains in


conduction as long as the current is
above the holding current, IH. IR

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
A1

The Triac

The triac is essentially a bidirectional SCR but the G


A2
anodes are not interchangeable. Triggering is done by
applying a current pulse to the gate; breakover triggering
is not normally used. IA

When the voltage on the A1


terminal is positive with respect IG2 IG1 IG0
IH0
to A2, a gate current pulse will IH1
IH2
cause the left SCR to conduct. VA
VBR(R0) VBR(R1) VBR(R2)
VBR(F2) VBR(F1) VBR(F0)
VA
IH2
When the anode voltages are IH1

reversed, the gate current pulse IG0 IG1 IG2 IH0

will cause the right SCR to


conduct. IA

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

Triac Applications

Triacs are used for control of ac in applications like


electric range heating controls, light dimmers, and
small motors.
Triac on
Like the SCR, the RL
IL
triac latches after
triggering and turns A1 Delay
Vin angle
off when the current is
G Conduction
below the IH, which A2
angle
happens at the end of VG
each alteration.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Silicon-Controlled Switch (SCS) Anode (A)


Anode
gate
The SCS is similar to an SCR but with Cathode
(G A)

two gates. It can be triggered on with a gate


(GK)
positive pulse on the cathode gate, and Cathode (K)
can be triggered off with a positive pulse
on the anode gate. +VCC

GA
In this example, the SCS is VGK A
controlling a dc source. The load is in VGA
GK
the cathode circuit, which has the VL
advantage of one side of the load K
being on circuit ground. RL

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
B2

The Unijunction Transistor (UJT)


E
The UJT consists of a a block of lightly-doped
(high resistance) n-material with a p-material
grown into its side. It is often used as a trigger B1

device for SCRs and triacs. V E

The UJT is a switching device; Cutoff


Negative
resistance Saturation
it is not an amplifier. When the VP Peak
point
emitter voltage reaches VP (the
peak point), the UJT fires,
going through the unstable Valley point

negative resistance region to VV

produce a fast current pulse.


IE
IP IV

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Unijunction Transistor (UJT)

The equivalent circuit for a UJT shows that looks like a


diode connected to a voltage divider. The resistance of the
lower divider (rB1) is inversely proportional to the emitter
current. When the pn junction is first B 2

forward-biased, the junction


r
resistance of rB1 suddenly appears
B2

V
to drop, and a rush of current occurs. +
pn
E +
V BB
+
IE
An important parameter is , which is the VEB1
VBB
intrinsic standoff ratio. It represents the rB1
ratio of rB1 to the interbase resistance rBB B1
with no current.
Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Unijunction Transistor (UJT) Application

A circuit using a UJT to fire an SCR is shown. When the


UJT fires, a pulse of current is delivered to the gate of the
SCR. The setting of R1 determines when the UJT fires. The
diode isolates the UJT
from the negative part A
D

of the ac. R 1
R L

VE UJT
The UJT produces a fast,
reliable current pulse to RG SCR
B
the SCR, so that it tends
R2
to fire in the same place C

every cycle.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
A

The Programmable Unijunction Transistor (PUT)


G
The PUT is a 4-layer thyristor with a gate. It is
primarily used as a sensitive switching device.
The gate pulse can trigger a sharp increase in
current at the output. V (anode-to-cathode voltage)
AK
K

The characteristic of a PUT is


VP
similar to a UJT, but the PUT
intrinsic standoff ratio can be
programmed with external
resistors and the UJT has a VV
fixed ratio.
0 IP IV IA
(anode current)

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Programmable Unijunction Transistor (PUT)

The principle application for a PUT is for driving SCRs and


triacs, but, like the UJT, can be used in relaxation oscillators.
For the circuit to oscillate, R1 must be large +VCC
enough to limit current to less than the valley
current (IV). The period of the oscillations is
R1 R2
given by:
1
T R1C ln A
1 G
C R3
where K
R4
R3

R2 R3

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary

The Programmable Unijunction Transistor (PUT)

What is intrinsic standoff ratio, and the period of the circuit?


+VCC
+20 V
R3 10 k
0.33
R2 R3 20 k + 10 k
R1 R2
1 220 k 20 k
T R1C ln
1 A
1 G
220 k 0.01 F ln 0.89 ms C R3
1 0.33 K 10 k
0.01 F
R4
27

What is the frequency? 1.12 kHz


Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Selected Key Terms

4layerdiode Thetypeof2terminalthyristorthatconducts
currentwhentheanodetocathodevoltagereaches
aspecifiedbreakovervalue.

Thyristor Aclassoffourlayer(pnpn)semiconductor
devices.

SCR Siliconcontrolledrectifier;atypeofthree
terminalthyristorthatconductscurrentwhen
triggeredbyavoltageatthesinglegateterminal
andremainsonuntilanodecurrentfallsbelowa
specifiedvalue.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Selected Key Terms

LASCR Lightactivatedsiliconcontrolledrectifier;afour
layersemiconductordevice(thyristor)that
conductscurrentinonedirectionwhenactivated
byasufficientamountoflightandcontinuesto
conductuntilthecurrentfallsbelowaspecified
value.
Diac Atwoterminalfourlayersemiconductordevice
(thyristor)thatcanconductcurrentineither
directionwhenproperlyactivated.
Triac A three-terminal thyristor that can conduct current
in either direction when properly activated.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Selected Key Terms

SCS Siliconcontrolledswitch;atypeoffourterminal
thyristorthathastwogateterminalsthatareused
totriggerthedeviceonandoff.
UJT Unijunctiontransistor;athreeterminalsinglepn
junctiondevicethatexhibitsanegativeresistance
characteristic.
PUT Programmable unijunction transistor; a type of
three terminal thyristor (physically more like an
SCR than a unijunction) that is triggered into
conduction when the voltage at the anode exceeds
the voltage at the gate.

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

1. The 4-layer (Shockley) diode can conduct current if


a. the anode-to-cathode voltage exceeds VBR
b. a current pulse is applied to the gate
c. both a and b are correct
d. none of the above

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

2. The SCR can conduct current if


a. the anode-to-cathode voltage exceeds VBR
b. a current pulse is applied to the gate
c. both a and b are correct
d. none of the above

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

3. A bidirectional thyristor is the


a. 4-layer diode
b. SCR
c. triac
d. silicon-controlled switch

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

4. A thyristor that looks like two back-to-back 4-layer


diodes is the
a. SCR
b. triac
c. SCS
d. diac

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

5. An SCR turns off when the


a. gate trigger current drops below a specified level
b. anode current drops below the holding current
c. both a and b are true
d. none of the above

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

6. The purpose of a crowbar circuit is to protect a load


from
a. excessive ripple
b. low-voltage
c. over-voltage
d. all of the above

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

7. A diac and triac are similar in that both devices


a. can use breakover triggering
b. can be used in ac circuits
c. are bidirectional
d. all of the above

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

8. A device that has an unstable negative resistance region


is the
a. UJT
b. diac
c. triac
d. SCS

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

9. The symbol for a silicon-controlled switch (SCS) is

(a) (b) (c) (d)

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

10. A programmable unijunction transistor (PUT) is


programmed by choosing the
a. RC time constant
b. gate resistors
c. power supply voltage
d. cathode resistor

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Quiz

Answers:
1. a 6. c
2. c 7. d
3. c 8. a
4. d 9. d
5. b 10. b

Electronic Devices, 9th edition 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.

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