Chapter 1 - Introduction

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UNIVERSITI TEKNOLOGI MALAYSIA
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SEE 4433
Power Electronics
And Drives
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Revised and Compiled by
DR. QAMAR SAEED

Thanks to
DR. TAN CHEE WEI, P03-217
cheewei@fke.utm.my
DEPARTMENT OF ENERGY CONVERSION

FACULTY OF ELECTRICAL ENGINEERING
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Chapter 1:
Introduction to
Power Electronics
Systems
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Overview
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1) Definition
Power Electronics: is the electronics applied to conversion and
control of electric power.
Range of power scale :
milliwatts(mW) megawatts(MW) gigawatts(GW)
A more exact explanation:
The primary task of power electronics is to process and control
the flow of electric energy by supplying voltages and currents in
a form that is optimally suited for user loads.
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Conversion of electric power

Other names for electric power converter:
Electric
-Power converter Power Power
Power
input output
-Converter Converter
-Switching converter
Control
-Power electronic circuit input
-Power electronic converter
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Industrial applications
Motor drives
Electrolysis
Electroplating
Induction heating
Welding
Arc furnaces and ovens
Lighting
Transportation applications
Trains & locomotives
Subways,Trolley buses
Magnetic levitation
Electric vehicles
Automotive electronics
Ship power systems
Aircraft power systems
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Utility stems applications

High- voltage dc transmission(HVDC)
Flexible ac transmission(FACTS)
Static var compensation & harmonics
suppression
Custom power & power quality control
Supplemental energy sources :
wind, photovoltaic, fuel cells
Energy storage systems
Power supplies for electronic
equipment
Telecommunications
Computers
Office equipment
Electronic instruments
Portable or mobile
electronics
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Residential and home appliances

Lighting
Heating
Air conditioning
Refrigeration & freezers
Cooking
Cleaning
Entertaining
Applications in space technology

Spaceship power systems
Satellite power systems
Space vehicle power systems
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Other aplications
Nuclear reactor control
Power systems for particle accelerators
Environmental engineering
Trends
It is estimated that in developed countries now 60% of the
electric energy goes through some kind of power electronics
converters before it is finally used.
Power electronics has been making major contributions to:
--better performance of power supplies and better control of
electric equipment
--energy saving
--environment protection
reduction of energy consumption leads to less pollution
reduction of pollution produced by power converters
direct applications to environment protection technology
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Major issues in power electronics
How to meet the requirement of the load or gain

better control of the load
How to improve the efficiency
for reliable operation of power semiconductor
devices
for energy saving
How to realize power conversion with less volume,
less weight, and less cost.
How to reduce negative influence to other equipment
in the electric power system and to the
electromagnetic environment.
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An application-specific
integrated circuit (ASIC) is an
integrated circuit (IC)
customized for a particular use,
rather than intended for general-
purpose use. For example, a
chip designed solely to run a
cell phone is an ASIC.
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Electronics Power

Devices,circuits Static & rotating
power equipment
Power
Electronics

Continuous,
discrete
Control

Power electronics is the
interface between electronics
and power
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Relation with multiple disciplines
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The history
Applicat ion of
fast- switching
Invention of fully- controlled
Thyristor semiconductor
devices GTO
Mercury arc rectifier IGBT
GTR
Vacuum- tube rectifier Power diode Power MOSFET
Power MOSFET
Thyratron Thyristor Thyristor
Thyristor
(DSP)
(microprocessor)
1900 1957 mid 1970s late 1980s
Pre-history 1st phase 2nd phase 3rd phase
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1) The concept and features

Power electronic devices: are the electronic devices that can be
directly used in the power processing circuits to convert or
control electric power.
Vacuum devices: Mercury arc
rectifier thyratron, etc. .

In broad sense
seldom in use today
Power Electronics
Semiconductor devices:
ssdevices
major power electronic devices
Very often:
Power electronic devices= Power semiconductor devices
Major material used in power semiconductor devicesSilicon

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Features of power electronic devices
a) The electric power that power electronic device deals with is

usually much larger than that the information electronic
device does.
b) Usually working in switching states to reduce power losses
On-state Voltage across the device is 0
P = VI = 0 since V=0
Off-state Current through the device is 0
P = VI = 0 since I=0
c)Need to be controlled by information electronic circuits.

d)Very often, drive circuits are necessary to interface between
information circuits and power circuits.
e)Dissipated power loss usually larger than information electronic
devices special packaging and heat sink are necessary.
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The insulated-gate bipolar transistor

or IGBT is a three-terminal power
semiconductor device, noted for
high efficiency and fast switching.
The Integrated Gate Commutated Thyristor (IGCT)

is a new high-power semiconductor device. An
IGCT is a sub family of the GTO thyristor 40and like
the GTO thyristor is a fully-controllable power
switch.
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Thyristors thyristoren
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It is a pn junction two terminal device.

It could be used as forward biased or reverse biased.
The forward drop is conduction loss and device must be cooled by
appropriate heat sink to limit junction temperature.
For most practical applications, diode regarded as ideal switch.
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d t
F
t
rr
UF td tf
t t t1 t2 t
F 0
UR
di R
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I
RP U
RP
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Even after reversing (polarity change), diode

continues to conduct, due to minority carriers
that remains stored in the pn junction. The
minority carriers requires certain time to
recombine with opposite charges to be
neutralized.
Please see Haroon Rashid Power Electronics,
3rd edition pages 33-37
Also see Bimal K Bose Modern Power
Electronics and AC Drives pages 24-26
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Examples of commercial
Power Diodes
part number Rated max voltage Rated vag current VF(typical) tr(max)
Fast recovery rectifiers

1N3913 400V 30A 1.1V 400ns
SD453N25S20PC 2500V 400A 2.2V 20s
Ultra-fast recovery rectifiers
MUR815 150V 8A 0.975V 35ns
MUR1560 600V 15A 1.2V 6ns
RHRU100120 1200V 100A 2.6V 60ns
Schottky rectifiers
MBR6030L 30V 60A 0.48V
444CNQ045 45V 440A 0.69V
30CPQ150 150V 30A 1.19V
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Ideally a diode should have no reverse recovery

time (trr). However the manufacturing cost may
increase.
In many applications, the effect of trr is not
significant.
General purpose diode have relatively high trr
and used in low speed applications.
These are manufactured by diffusion.
Available in two type: (a) stud or stud mounted
(b) disk, press pack or hockey puck.
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Fast Recovery Diode
It has very low trr < 1 to 5 micro sec

Used in dc-dc or dc-ac converter circuits, where
speed of recovery is often of critical importance.
Epitaxial diode with typical trr=50 n sec is also
included in this category.
Used in high frequency ckt.
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UNIVERSITI TEKNOLOGI MALAYSIA Schottky Diode
It has limited blocking voltage (50-100V) and high
leakage current.
It is used in high frequency ckt.
Charge storage problem is resolved in schottky
diode.
It is obtained by setting up a barrier potential with
contact between a metal and semiconductor.
A layer of metal is deposited on a thin film
epitaxial layer of n type silicon.
Potential barrier act as pn junction.
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UNIVERSITI TEKNOLOGI MALAYSIA Thyristor
Thyristor or SCR are traditional workhorses for bulk power
conversion and control in industry.
Three types of Thyristors are
Standard or slow phase conduction
Fast switching
Voltage fed
Three junction P-N-P-N device. PNP and NPN is connected in
regenerative mode.
When the anode is positive, the device can be triggered into
conduction by a short positive gate current pulse, but once the
device is conducting, the gate loses its control to turn off the device.
A thyristor can also be turn on by excessive anode voltage, its rate
of rise dv/dt, by a rise in junction temperature (Tj) or by shining on
the junctions.
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Half- controlled device --
Thyristor
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UNIVERSITI TEKNOLOGI MALAYSIA Thyristor
The volt ampere characteristics of the device indicate
that at gate current Ig=0, if forward voltage is applied on
the device, there will be a leakage current due to
blocking of middle junction.
If voltage exceeds a critical limit breakover voltage), the
device switch into conduction.
With increasing magnitude of Ig, the forward breakover
voltage is reduced and eventually at some Ig value, the
device behave like a diode with entire forward blocking
region removed.
During conduction, if the gate current is zero and the
anode current falls below a critical limit, called the
holding current, the device revert to the forward blocking
state.
With reverse bias act as diode.
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UNIVERSITI TEKNOLOGI MALAYSIA Power Transistors
Power transistor have controlled turn-on and turn-off
characteristics.
The transistor which are used as switching element
operated in saturation region, resulting in low on state
voltage drop.
The switching speed of modern transistors is much
higher than that of thyristors.
They are extensively employed in dc-dc and dc-ac
converters, with inverse parallel connected diodes to
provide bidirectional current flow.
But they have lower rating than thyristor. Therefore,
transistors are normally used in low to medium power
applications.
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The power transistors can be broadly classified
into five categories:
1. BJTs
2. MOSFETs
3. Static Induction transistors (SITs)
4. Insulated gate bipolar transistor (IGBTs)
5. COOLMOS
The practical transistors differ from ideal
devices
The transistor have certain limitations and are
restricted to some applications.
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There are three operating modes of a transistor: cutoff,
active, saturation.
In the cutoff region, the base current is not enough to
turn it on and both junctions are reverse biased.
In the active region, the transistor act as an amplifier,
where the base current is amplified by a gain and VCE
decreases with base current. The CBJ is reverse biased
and BEJ is forward biased.
In the saturation region, the base current is sufficiently
high so that the VCE is low. Both junction are forward
biased.
Please see Haroon Rashid Power Electronics, 3rd
edition pages 124-131
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Controllable Switches
(Power Transistors)
Can be turned ONand OFF by relatively very small

control signals.
Operated in SATURATION and CUT-OFF modes only.
No linear region operation is allowed due to excessive
power loss.
In general, power transistors do not operate in latched mode.
Traditional devices: Bipolar junction transistors (BJT), Metal
oxide silicon field effect transistor ( MOSFET), Insulated gate
bipolar transistors (IGBT), Gate turn-off thyristors (GTO)
Emerging (new) devices: Gate controlled thyristors (GCT). Or
MCT (MOSFET controlled Thyristor)
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Bipolar Junction Transistor (BJT)
BJT invented in 1948, by

1960 substantial power
handling capability
Current Control Device (Ib
control Ic). It has 3-layer
p.n.p or n.p.n structure with
2 junctions.
Ratings: Voltage:
VCE<1000, Current: IC<400A.
- Switching frequency up to 5kHz. Low on-state voltage:

VCE(sat) : 2-3V
Low current gain (<10). Need high base current to obtain reasonable IC.
(Increase current gain by Darlington Pairs 100s)
Expensive and complex base drive circuit. Hence not popular in new
products. SOA- second break-down requires snubber )
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BJT Darlington pair
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Metal Oxide Silicon Field Effect
Transistor (MOSFET)
A BJT is a current controlled device. The current gain is

highly dependant on the junction temperature.
A power MOSFET is a voltage controlled device and
requires only small current.
The switching speed is very high in nano seconds.
It has high applications in low power frequency
converters.
Power MOSFETs dont suffer from the phenomena of
second breakdown as do BJTs.
But MOSFETs have problem of electrostatic discharge
and requires special care in handling.
Please see Haroon Rashid Power Electronics, 3rd
edition pages 137-151
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Metal Oxide Silicon Field Effect
Transistor (MOSFET)
Basic structure
Symbol
D D
G G
S S
N channel P channel
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MOSFET Characteristics
Basically low voltage device. High voltage device are available up to

600V but with limited current. Can be paralleled quite easily for higher
current capability.
Has positive temperature coefficient, results in nonexistence
of second breakdown. (avoiding the creation of hot spot)
Has high input impedance, so easily connected to CMOS or TTL
logic.
Internal (dynamic) resistance between drain and source during on
state, RDS(ON), , limits the power handling capability of MOSFET. High
losses especially for high voltage device due to RDS(ON) .
Dominant in high frequency (>100 kHz) and low power application .
Biggest application is in switched-mode power supplies.
CoolMOS ? (Rds(on) half of the NORMAL MOSFET for the same V & I
rating higher efficiency)
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Examples of commercial power MOSFET
part number Rated max voltage Rated vag current Ron Qg(typical)
IRFZ48 60V 50A 0.018 110nC
IRF510 100V 5.6A 0.54 8.3 nC
IRF540 100V 28A 0.077 72 nC
APT105M25BN 100V 75A 0.025 171 nC
R IRF740 400V 10A 0.55 63nC
8.3 nC
MTM15N40E 400V 15A 0.3 110 nC
APT5025BN 500V 23A 0.25 83nC
APT1001RBNR 1000V 11A 1.0 150 nC
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UNIVERSITI TEKNOLOGI MALAYSIA IGBTs
An IGBT combine the advantages of BJTs and
MOSFETs.
It has high input impedance, like MOSFETs and
low on state conduction loss like BJTs. However,
there is no second breakdown problem as with
BJTs.
An IGBT is inherently faster than a BJT.
However, the switching speed of IGBTs is
inferior to that of MOSFETs.
Please see Haroon Rashid Power Electronics,
3rd edition pages 147-154
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Insulated Gate Bipolar Transistor
(IGBT)
Developed 1980,widely
available 1990s
Combination of BJT and
MOSFET characteristics.
Gate behavior similar
to MOSFET - easy to turn
ON and OFF.
Low losses like BJT
due to low on-state
Collector- Emitter voltage
(2 3 V).
Ratings: Voltage: VCE<3.3 kV, Current,: IC<1.2 kA

currently available. Latest: HVIGBT 4.5 kV/1.2 kA.
Switching frequency up to 100 kHz. Typical applications:
20 50 kHz.
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Examples of commercial IGBT
part number Rated max voltage Rated avg current VF(typical tf(typical)
Single-chip devices
HGTG32N60E2 600V 32A ) 2.4V 0.62s
HGTG30N120D2 1200V 30A 3.2V 0.58s
multiple-chip power modules_
CM400HA-12E 600V 400A 2.7V 0.3s
CM300HA-24E 1200V 300A 2.7V 0.3s
8.3 nC
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Gate turn-off Thyristor (GTO)
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Gate turn-off Thyristor (GTO)
Behave like normal thyristor, but can be turned off

using gate signal (applied negative voltage across VGK)
However turning off is difficult. Need very large reverse gate
current (normally 1/5 of anode current) and longer off time
(tail current).
E.g.: a 2500 V, 1000 A
GTO requires a peak negative gate current of 250 A.
Gate drive design is very difficult due to very large reverse

gate current at turn off.
Ratings: Highest power ratings switch:
Voltage: Vak < 5 kV; Current: Ia< 5 kA. Frequency < 2 kHz.
Very stiff competition:
Low end-from IGBT. High end from IGCT
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Insulated Gate-Commutated Thyristor
(IGCT)
Among the latest Power switches.
Conducts like normal thyristor
(latching), but can be turned off
using gate signal, similar to IGBT
turn off; VGT of 20 V is sufficient (fast
rising turn-off pulse with very short
duration)
The gate drive requirement
decrease by a factor of 5 compared
to GTO.
Power switch is integrated with the
gate-drive unit.
Ratings: Voltage: Vak< 6.5 kV;
Current: Ia < 4 kA; Frequency <1
kHz. Currently 10 kV device is being
developed. Very low on state
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voltage: 2.7 V for 4 kA device
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MOS-CONTROLLED THYRISTOR
(MCT)
New recently commercially available (Harris SemiCon.)

Basically a Thyristor with two MOSFETs built into the gate structure
(ON-FET turns ON MCT and OFF-FET turns OFF MCT)
Turn on MCT by turning on M1 - Apply positive gate-cathode voltage
Turn off MCT by turning on M2 - Apply negative gate-anode voltage
Low on-state losses with high current capability
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Switches Idealized
Characteristic
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Power Switches: Power Ratings
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Device Applications
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(Base/gate) Driver circuit
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Amplification: Example:
Simple MOSFET gate driver
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Isolation
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Application Examples
For each of the following application, choose the best power

switches and reason out why.
An inverter for the light-rail train (LRT) locomotive operating
from a DC supply of 750 V. The locomotive is rated at 150 kW.
The induction motor is to run from standstill up to 200 Hz, with
power switches frequencies up to 10 kHz.
A switch-mode power supply (SMPS) for remote
telecommunication equipment is to be developed. The input
voltage is obtained from a photovoltaic array that produces a
maximum output voltage of 100 V and a minimum current of 200
A. The switching frequency should be higher than 100 kHz.
A HVDC transmission system transmitting power of 300 MW
from one ac system to another ac system both operating at 50
Hz, and the DC link voltage operating at 2.0 kV.
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Power Switch Losses
Why it is important to consider losses of power switches?

to ensure that the system operates reliably under
prescribed ambient conditions
so that heat removal mechanism (e.g. heat sink, radiators,
coolant) can be specified. Losses in switches affects the
system efficiency
Heat sinks and other heat removal systems are costly and
bulky. Can be substantial cost of the total system.
If a power switch is not cooled to its specified junction
temperature, the full power capability of the switch cannot be
realized. De-rating of the power switch ratings may be
necessary.
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Power Switch Losses
Main losses:
forward conduction losses

blocking state losses
switching losses
Gate drive losses
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Ideal switch:
Zero voltage drop across it during turn-on (Von).
Although the forward current ( Ion ) may be large, the losses on the
switch is zero.
Real switch:
Exhibits forward conduction voltage (between 1-3V, depending on
type of switch) during turn on.
Losses (ON state) is measured by product of volt-drop across the
device Von with the current, Ion, averaged over the period.
Major loss at low frequency and DC

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During turn-off, the switch blocks large voltage.

Ideally no current should flow through the switch.
But for real switch a small amount of leakage
current may flow. This creates turn-off or blocking
state losses
The leakage current during turn-off is normally
very small, Hence the turn-off losses are usually
neglected.
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Ideal switch:
During turn-on and turn off, ideal switch requires zero
transition time. Voltage and current are switched
instantaneously.
Power loss due to switching is zero
Real switch:
During switching transition, the voltage requires time to fall
and the current requires time to rise.
The switching losses is the product of device voltage
and current during transition.
Major loss at high frequency operation
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Safe Operating
Area (SOA) - BJT
Second Breakdown when high voltage

and high
current occurs simultaneously during
turn-off, a hot spot is formed & device
failed by thermal runaway
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Ideal vs. Practical power switch (1)
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Ideal vs. Practical power switch (2)
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The End
of Chapter 1
Thank You
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Chapter 1 - Introduction

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Chapter 1 - Introduction

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UTM

UNIVERSITI TEKNOLOGI MALAYSIA

Revised and Compiled by

DR. QAMAR SAEED

DEPARTMENT OF ENERGY CONVERSION

Conversion of electric power

Utility stems applications

Residential and home appliances

Applications in space technology

Major issues in power electronics

How to meet the requirement of the load or gain

Pre-history 1st phase 2nd phase 3rd phase

1) The concept and features

rectifier thyratron, etc. .

Major material used in power semiconductor devicesSilicon

a) The electric power that power electronic device deals with is

Off-state Current through the device is 0

c)Need to be controlled by information electronic circuits.

The insulated-gate bipolar transistor

The Integrated Gate Commutated Thyristor (IGCT)

It is a pn junction two terminal device.

Even after reversing (polarity change), diode

Fast recovery rectifiers

Ideally a diode should have no reverse recovery

It has very low trr < 1 to 5 micro sec

Can be turned ONand OFF by relatively very small

BJT invented in 1948, by

- Switching frequency up to 5kHz. Low on-state voltage:

A BJT is a current controlled device. The current gain is

Basically low voltage device. High voltage device are available up to

Ratings: Voltage: VCE<3.3 kV, Current,: IC<1.2 kA

Behave like normal thyristor, but can be turned off

Gate drive design is very difficult due to very large reverse

New recently commercially available (Harris SemiCon.)

(Base/gate) Driver circuit

(Base/gate) Driver circuit

For each of the following application, choose the best power

Why it is important to consider losses of power switches?

forward conduction losses

Major loss at low frequency and DC

During turn-off, the switch blocks large voltage.

Second Breakdown when high voltage

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