Академический Документы
Профессиональный Документы
Культура Документы
IMPERFECTIONS IN SOLIDS
ISSUES TO ADDRESS...
What are the solidification mechanisms?
Chapter 4 -
1
Imperfections in Solids
There is no such thing as a perfect crystal.
Chapter 4 -
2
Types of Imperfections
Vacancy atoms
Interstitial atoms Point defects
Substitutional atoms
Chapter 4 -
3
Point Defects
Vacancies:
-vacant atomic sites in a structure.
Vacancy
distortion
of planes
Self-Interstitials:
-"extra" atoms positioned between atomic sites.
self-
interstitial
distortion
of planes
Chapter 4 -
4
Equilibrium Concentration:
Point Defects
Equilibrium concentration varies with temperature!
Nv Q
No. of potential exp
v
N kT
defect sites.
Temperature
Boltzmann's constant
(1.38 x 10 -23 J/atom-K)
(8.62 x 10 -5 eV/atom-K)
Each lattice site
is a potential
vacancy site
Chapter 4 -
5
Measuring Activation Energy
Nv Nv slope
ln
N N
-Qv /k
exponential
dependence!
T 1/T
defect concentration
Chapter 4 -
6
Example Problem 4.1
Calculate the equilibrium number of vacancies per cubic meter for
copper at 1000C. The energy for vacancy formation is 0.9 eV/atom;
the atomic weight and density (at 1000 C) for copper are 63.5 g/mol
and 8.4 g/cm3, respectively.
Solution.
Use equation 4.1. Find the value of N, number of atomic sites per cubic meter for
copper, from its atomic weight Acu, its density, and Avogadros number NA.
Chapter 4 -
7
Continuing:
Qv
N v N exp
kT
( 0 .9 eV
(8.0x10 atoms / m ) exp
28 3
(8.62 x105 eV / K )(1273K )
2.2x1025 vacancies/m 3
Chapter 4 -
8
Estimating Vacancy Concentration
Find the equil. # of vacancies in 1 m3 of Cu at 1000C.
Given:
= 8.4 g/cm 3 A Cu = 63.5 g/mol
Qv = 0.9 eV/atom NA = 6.02 x 1023 atoms/mol
0.9 eV/atom
Nv Q
exp
v
= 2.7 x 10-4
N kT
1273K
8.62 x 10-5 eV/atom-K
NA
For 1 m , N = x
3 x 1 m3 = 8.0 x 1028 sites
A Cu
Answer:
Nv = (2.7 x 10-4)(8.0 x 1028) sites = 2.2 x 1025 vacancies
Chapter 4 -
9
Point Defects in Alloys
Two outcomes if impurity (B) added to host (A):
Solid solution of B in A (i.e., random dist. of point defects)
OR
Chapter 4 -
10
Imperfections in Solids
Conditions for substitutional solid solution (S.S.)
W. Hume Rothery rule
1. r (atomic radius) <15%
2. Proximity in periodic table
i.e., similar electronegativities
3. Same crystal structure for pure metals
4. Valency
All else being equal, a metal will have a greater tendency
to dissolve a metal of higher valency than one of lower
valency
Chapter 4 -
11
Imperfections in Solids
Application of HumeRothery rules Solid
Solutions Element Atomic Crystal Electro- Valence
Radius Structure nega-
(nm) tivity
1. Would you predict Cu 0.1278 FCC 1.9 +2
C 0.071
more Al or Ag H 0.046
O 0.060
to dissolve in Zn? Ag 0.1445 FCC 1.9 +1
More Al because size is closer and val. Is Al 0.1431 FCC 1.5 +3
higher but not too much FCC in HCP Co 0.1253 HCP 1.8 +2
Cr 0.1249 BCC 1.6 +3
2. More Zn or Al Fe 0.1241 BCC 1.8 +2
Ni 0.1246 FCC 1.8 +2
in Cu? Pd 0.1376 FCC 2.2 +2
Surely Zn since size is closer thus Zn 0.1332 HCP 1.6 +2
causing lower distortion (4% vs 12%)
Table on p. 106, Callister 7e.
Chapter 4 -
12
Imperfections in Solids
Specification of composition
m1
weight percent (wt%) C1 x 100
m1 m2
m1 = mass of component 1
n m1
atom percent (at%) C
'
1 x 100
n m1 n m 2
Chapter 4 -
13
Wt. % and At. % -- An example
C1 * A2
C
'
1 100
C1 * A2 C2 * A1 Converts from wt
% to At% (Ai is
C2 * A1
C
'
2 100 atomic weight)
C1 * A2 C2 * A1
C * A1
'
C1 ' 1
100
C1 * A1 C2 * A2
'
Converts from at
% to wt% (Ai is
C2' * A2 atomic weight)
C2 ' 100
C1 * A1 C2 * A2
'
Chapter 4 -
15
Determining Mass of a Species per Volume
i is density of pure
C element in g/cc
C1 1
"
103 Computed this way,
C1 C2
gives
1 2
concentration of
C speciesi in kg/m3 of
C2 2
"
103 the bulk mixture
C1 C2
(alloy)
1 2
Chapter 4 -
16
Line Defects
Dislocations:
are line defects,
slip between crystal planes result when dislocations move,
produce permanent (plastic) deformation.
slip steps
Chapter 4 -
17
Imperfections in Solids
Chapter 4 -
18
Imperfections in Solids
Edge Dislocation
Chapter 4 -
19
Motion of Edge Dislocation
Dislocation motion requires the successive bumping
of a half plane of atoms (from left to right here).
Bonds across the slipping planes are broken and
remade in succession.
Chapter 4 -
20
Imperfections in Solids
Screw Dislocation
Screw Dislocation
b
Dislocation
line
Burgers vector b (b)
(a)
Adapted from Fig. 4.4, Callister 7e.
Chapter 4 -
21
Edge, Screw, and Mixed Dislocations
Mixed
Edge
Chapter 4 -
22
Imperfections in Solids
Dislocations are visible in electron micrographs
Stacking faults
For FCC metals an error in ABCABC packing sequence
Ex: ABCABABC
Chapter 4 -
25
Microscopic Examination
Crystallites (grains) and grain boundaries.
Vary considerably in size. Can be quite large
ex: Large single crystal of quartz or diamond or Si
ex: Aluminum light post or garbage can - see the
individual grains
Crystallites (grains) can be quite small (mm or
less) necessary to observe with a
microscope.
Chapter 4 -
26
Optical Microscopy
Useful up to 2000X magnification.
Polishing removes surface features (e.g., scratches)
Etching changes reflectance, depending on crystal
orientation.
crystallographic planes
Adapted from Fig. 4.13(b) and (c), Callister
7e. (Fig. 4.13(c) is courtesy
of J.E. Burke, General Electric Co.
Micrograph of
brass (a Cu-Zn alloy)
0.75mm
Chapter 4 -
27
Optical Microscopy
Grain boundaries...
are imperfections,
are more susceptible
to etching,
may be revealed as polished surface
dark lines,
change in crystal surface groove
orientation across grain boundary
(a)
boundary. Adapted from Fig. 4.14(a)
and (b), Callister 7e.
ASTM grain (Fig. 4.14(b) is courtesy
of L.C. Smith and C. Brady,
size number the National Bureau of
Standards, Washington, DC
Chapter 4 -
29
Optical Microscopy
Polarized light
metallographic scopes often use polarized
light to increase contrast
Also used for transparent samples such as
polymers
Chapter 4 -
30
Microscopy
Optical resolution ca. 10-7 m = 0.1 m = 100 nm
For higher resolution need higher frequency
X-Rays? Difficult to focus.
Electrons
wavelengths ca. 3 pm (0.003 nm)
(Magnification - 1,000,000X)
Atomic resolution possible
Electron beam focused by magnetic lenses.
Chapter 4 -
31
Scanning Tunneling Microscopy
(STM)
Atoms can be arranged and imaged!
Photos produced from
the work of C.P. Lutz,
Zeppenfeld, and D.M.
Eigler. Reprinted with
permission from
International Business
Machines Corporation,
copyright 1995.
Chapter 4 -
32
Summary
Point, Line, and Area defects exist in solids.
Chapter 4 -
33