Electrical Energy Universidad

Conversion and de Oviedo

Power Systems

Power Electronic Devices

Semester 1

Power Supply
Lecturer: Javier Sebastin
Systems
Outline
Review of the physical principles of operation of
semiconductor devices.
Thermal management in power semiconductor devices.
Power diodes.
Power MOSFETs.
The IGBT.
High-power, low-frequency semiconductor devices
(thyristors).

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Electrical Energy Universidad
Conversion and de Oviedo
Power Systems

Lesson 2 - Thermal management in power

semiconductor devices
Semester 1 - Power Electronics Devices

3
 Outline

Basic concepts and calculation about thermal management in

power semiconductor devices.
The main topics to be addressed in this lesson are the following:
Introduction.

Thermal resistances and electric equivalent circuits.

Heat sinks for power electronic devices.

Thermal calculations in transient operation.

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 Main ideas about heat transfer

Heat transfer occurs through three mechanisms:

Radiation. Only significant for space applications.
Conduction.
Significant for general
Convection. power applications.

Conduction: the heat is transferred by the vibratory motion of atoms or

molecules.
Convection: the heat is transferred by mass movement of a fluid. It could be
natural convection (without a fan) or forced convection (with a fan).
In both cases, the heat transfer process can be approached using equivalent
electric circuits.
However, a detailed study of the heat transfer mechanisms is more complex
and it is beyond the scope of this course.
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 Simple static thermal model (I)
1 2

Q12_cond
T1 A
Q12_conv T2
Simple model for heat conduction:
Q12_cond = (T1 T2)/Rth12_cond , where:
Q12_cond = rate of heat energy transferred from 1 to 2 due to conduction.
T1 = temperature at 1. T2 = temperature at 2.
Rth12_cond = thermal resistance between 1 and 2 due to conduction.

Simple model for convection:

Q12_conv = h(T1,T2,n)A(T1 T2) , where:
Q12_conv = rate of heat energy transferred from 1 to 2 due to convection.
h = film coefficient of heat transfer.
n = fluid velocity.
A = cross-sectional area.
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 Simple static thermal model (II)
1 2

Q12_cond = (T1 T2)/Rth12_cond Q12_cond

Q12_conv = h(T1,T2,n)A(T1 T2) T1 Q12_conv

Q12
T2

Over the temperature ranges of interest (from -40o C +100 o C) h is

fairly constant for a given value of n. Therefore:

Q12_conv = h(n)A(T1 T2) = (T1 T2)/Rth12_conv(n), where:

Rth12_conv (n) = 1/[h(n)A]
The total rate of heat energy transferred from 1 to 2 will be:

Q12 = Q12_cond + Q12_conv and therefore:

Q12 = (T1 T2)/Rth12(n) where:

Rth12(n) = 1/[1/Rth12_cond + 1/Rth12_conv(n)] is the thermal

resistance between 1 and 2. 7
 Simple static thermal model (III)

Q12 = (T1 T2)/Rth12(n) T1 Q12

T2
1 2
We will use the notation Rth12 (or Rq12) for the
thermal resistance in natural and forced
convection. Its value will depend on the fluid (air) V1 V2
velocity.
1 2
We can re-write the above mentioned equation
replacing the rate of heat energy transferred from R12
1 to 2 with the power transferred from 1 to 2: i12
P12 = (T1 T2)/Rth12
Now, we can establish a direct relationship
between this equation and Ohms law:
Rth R
P12 = (T1 T2)/Rth12 i12 = (V1 V2)/R12 T V
Thermal world Electric world
P i 8
 Simple static thermal model (IV)
l
Electric resistance: R = r l/A, where:
r = electric resistivity.
l = length. V1 i12
r V2 A
A = cross-sectional area.
1 2
Thermal resistance: Rth = rth l/A , where:
l
rth = thermal resistivity.

Material Resistivity [oCcm/W] T1 Q12

rth T2 A
Still air 3050
1 2
Mica 150
Filled silicone grease 130
Alumina (Al2O3) 6.0
Berylia (BeO) 1.0
Aluminum Nitride (AlN) 0.64
Aluminum 0.48
Copper 0.25 9
 Thermal model for a power semiconductor device (I)

Typical mechanical structure used for mounting a power semiconductor device

Bonding wire Semiconductor junction

Case
Interface
(e.g., mica) Si
Interface
Header (Cu, Al or Ti)

Heat sink

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 Thermal model for a power semiconductor device (II)
Example: an electronic device in TO-3 package over an HS02 heat sink

Semiconductor package
(Case)
TO-3

Insulating mica for TO-3

HS02 (Interface)

Heat sink

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 Thermal model for a power semiconductor device (III)
Examples of final assembly of electronic devices in TO-3 package over heat sinks

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 Thermal model for a power semiconductor device (IV)
Thermal resistances without a heat sink

Junction (J)
Ambient (A)
Case (C)

Basic equations: RthCA

TC = TA + RthCAP
Printing Circuit Board (PCB)
TJ = TC + RthJCP RthJC
Therefore: RthCA RthJC
TJ = TA + (RthJC + RthCA)P TA TC TJ
A C J

P
TA

0 oC 13
 Thermal model for a power semiconductor device (V)
Thermal resistances with a heat sink (I)
Ambient (A)
Case (C) Junction (J)
Spacer
RthHA RthCA (Mica plate)

Heat sink (H)

RthCH RthJC
RthCA RthJC
TA TC TJ
A C J

TA RthCH
RthHA
0 oC P 14
 Thermal model for a power semiconductor device (VI)
Thermal resistances with a heat sink (II)
RthCA RthJC
TA TC TJ
A C J
RthHA RthCH
H

TA
0 oC P
Basic equations:
TC = TA + [RthCA(RthHA + RthCH)/(RthCA + RthHA + RthCH)]P
TJ = TC + RthJCP
Therefore:
TJ = TA + [RthJC + RthCA(RthHA + RthCH)/(RthCA + RthHA + RthCH)]P
However, many times RthCA >> (RthHA + RthCH), and therefore:
TJ TA + (RthJC + RthHA + RthCH)P 15
 Thermal model for a power semiconductor device (VII)
Thermal resistances with a heat sink (III)

TH TC TJ
TA
A H C J
RthHA RthCH RthJC

TA P
0 oC

Basic equations:
Main issue in thermal management:
TH = TA + RthHAP
The junction temperature must be below
TC = TH + RthCHP
the limit specified by the manufacturer.
TJ = TC + RthJCP
For power silicon devices, this limit is
Therefore: about 150-200 oC.
TJ = TA + (RthJC + RthCH + RthHA)P
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 Thermal resistance junction to case, RthJC (I)

Its value depends on the device.

Examples corresponding to different devices in TO-3:

MJ15003, NPN low-frequency power transistor for audio applications

LM350, adjustable voltage regulator

2N3055, NPN low-frequency power transistor for audio applications

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 Thermal resistance junction to case, RthJC (II)
The same device has different value of RthJC for different packages.
Examples corresponding to two devices:
IF(AV) = 5A, VRRM = 1200V

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 Thermal resistance case to ambient, RthCA

Its value depends on the case.

Manufacturers give information about RthJA = RthJC + RthCA.
Therefore, RthCA = RthJA - RthJC.
This thermal resistance is important only for relative low-power devices.

IRF150, N-Channel power MOSFET in TO-3 package

IRF540, N-Channel power MOSFET in TO-220 package

TO-220

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Other examples of packages for power
semiconductor devices

TO-247

SOT-227 D-56

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 Thermal resistance case to heat sink, RthCH

Its value depends on the interface material between semiconductor

and heat sink.
Examples of thermal pads for TO-3 package:

Based on silicone: SP400-0.009-00-05

Description THERMAL PAD TO-3 .009" SP400

Material Silicone Based
Thermal Conductivity 0.9 W/m-K
Thermal Resistance 1.40 C/W
Thickness 0.229 mm

Based on mica:

Rth=0.3 oC/W)

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 Thermal resistance heat sink to ambient, RthHA (I)

Its value depends on the heat sink dimensions and shape and also on
the convection mode (either natural or forced).
Examples of heat sinks for TO-3 package:

UP-T03-CB HP1-TO3-CB HS02

Material Aluminum Material Aluminum Material Aluminum
Rth @ natural 9 C/W Rth @ natural 5.4 C/W Rth @ natural 4.5 C/W

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Thermal resistance heat sink to ambient, RthHA (II)
Examples of heat sinks for general purpose

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Thermal resistance heat sink to ambient, RthHA (III)
Heat sink profiles (I)

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Thermal resistance heat sink to ambient, RthHA (IV)
Heat sink profiles (II)

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 Thermal resistance heat sink to ambient, RthHA (V)
Calculations with heat sink profiles (I)

Thermal resistance for 15 cm

and natural convection
Thermal resistance for 15
cm and air speed of 2m/s
(forced convection)

Rth_10cm = 1.32Rth_15cm Rth_1m/s = 1.41Rth_2m/s

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 Thermal resistance heat sink to ambient, RthHA (VI)
Calculations with heat sink profiles (II)

Thermal resistance for 15 cm

and natural convection
Thermal resistance for 15
cm and air speed of 2m/s
(forced convection)

In the case of natural convection,

Rth_50oC = 1.15Rth_75oC
the value of Rth given by the
manufacturer corresponds to the
case of a difference of 75 oC between
heat sink and ambient.
For other differences, the following
plot must be used.

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 Thermal resistance heat sink to ambient, RthHA (VII)

Examples

Rth_50oC =
Rth_10cm = Rth_1m/s = 1.15Rth_75oC
1.32Rth_15cm 1.41Rth_2m/s

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Rth for 10 cm at DT=50 oC and natural convection = 0.991.321.15 = 1.5 oC/W

Rth for 10 cm and 2 m/s air speed = 0.721.32= 0.95 oC/W
Rth for 15 cm and 1 m/s air speed = 0.721.41 = 1.01 oC/W
Rth for 10 cm and 1 m/s air speed = 0.721.321.41 = 1.34 oC/W 28
 Transient thermal model (I)

So far our discussion and models have been limited to systems in which both the
energy being dissipated and the temperatures within the system are constant.
Our models do not represent the following situations:
Star-up processes, where dissipation may be constant, but temperatures are climbing.
Pulsed operation, where temperatures may be constant, but dissipation is not.
The latter situation is the most important one, since under such conditions the
junction temperature can be much higher than the one predicted by static models.
Thermal inertia can be characterized by capacitors in the equivalent electric
model.
Rth21
T1 T2
1 T2 > T1 2 1 2
Cth21
T1 Q21 T2 T1
P21
0 oC 29
 Transient thermal model (II)

Transient thermal model for a star-up process, P being constant:

CthHA CthCH CthJC

A H C J
TA
TH TC
RthHA RthCH RthJC TJ
CthJC << CthCH << CthHA
TA
0 oC
P= constant

Under this condition, the junction temperature will be lower than the one
predicted by static models, due to the fact that the total thermal impedance
will be lower than the thermal resistance.
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 Transient thermal model (III)
Transient thermal model for pulsed-power operation in
steady-state (I) (after the start-up process)

CthHA CthCH CthJC CthJC << CthCH << CthHA

A H C J
TA
TH R TC
TA RthHA thCH RthJC TJ
0 oC P = pulsed

TH and TC can be computed from Pavg, because P Pavg

RthHACthHA >> tS and RthCHCthCH >> tS. Hence, the AC
component of P can be removed and, therefore: tC
TH = TA + PavgRthHA and TC = TH + PavgRthCH tS Duty cycle:
However, RthHACthHA may be lower than tS and, D = tC/tS
therefore, TJ cannot be computed from RthJC and Pavg.
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 Transient thermal model (IV)
Transient thermal model for pulsed-power operation in
steady-state (II) (after the start-up process)
CthJC
P Ppeak
Constant T C J Pavg
TC TC
RthJC TJ tC
P = pulsed tS
0 oC

T TJ_ wide_pulse = TC + PpeakRthJC

The maximum value of the actual
temperature is not as low as TJ_average.
Tj_avg
The maximum value of the actual Tj_actual
temperature is not as high as TJ_wide_pulse. TJ_avg = TC + PavgRthJC
How can we compute the maximum
value of the actual temperature? TC
Transient thermal impedance.
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 Transient thermal model (V)
Concept of transient thermal impedance

We know that TJ_wide_pulse > TJ_max > TJ_avg. P Ppeak

We will compute TJ_max considering Ppeak and Pavg
an impedance lower than RthJC.
This impedance is called transient thermal tC
impedance, ZthJC(t). tS
Its value depends on the duty cycle and on
the switching frequency. T TJ_ wide_pulse
Tj_max
The final equation to compute TJ_max is:
TJ_max = TC + PpeakZthJC(t) TJ_ avg
Tj_actual

TJ_ wide_pulse = TC + PpeakRthJC

TJ_avg = TC + PavgRthJC

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 Transient thermal model (VI)
Example of transient thermal impedance (I)
TJ_max = TC + PpeakZthJC(t)

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 Transient thermal model (VII)
Example of transient thermal impedance (II)

0.43

0.00004
fs = 5 kHz t1 = Dt2 = D/fS = 0.2/5 kHz = 0.00004 sec
D =0.2 ZthJC = 0.43 oC/W
25 W
TJ_max - TC = 25 W 0.43 oC/W = 10.75 oC 35
 Transient thermal model (VIII)
Relationship between transient thermal impedance and
thermal resistance
ZthJC() RthJC

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