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In most CMOS circuits the delay of The delay of simple gates maybe
a single gate is dominated by the approximated by constructing an
rate at which the output node can equivalent inverter. WHY?
be charged and discharged.
Consider a 3 input NOR gate with
The delay can be approximated by:
Wp = Wn for all transistors:
tdr = tr/2 and tdf = tf/2
When there is a path in the pull-up
The average delay for rising and network from the output to VDD
falling output transitions is: the effective gain factor of the
tav = (tdf+tdr)/2 series p-type transistors is:
The delay equations presented use 1
only first order MOS equations for eff
1 1 1
the calculations of drain currents p1 p2 p3
and thus do not account for second
order effects.
2
Gate Delays
For the pull-down network only The gain factor of the three series
one n-type transistor need to be p-type transistors is given by:
on in order for us to have a path p
series
from the output node to ground. 3
eff =n and this gain factor is The delay through this series
improved by a factor of three if connection is therefore given by:
all the n-type devices conduct CL
series k
simultaneously. p
VDD
For the NOR gate example we 3
can thus estimate the rise and fall If all three parallel n-type devices
times as follows: are conducting we have that:
tf
tr k
CL
and t f k
CL tf
p n 3
VDD
3
3
RC Delays
5
RC Delay Model
6
Delay Estimation (RC Models)
7
The Elmore Delay Model
Vin
R1 R2 R3 RN
C2
The Elmore delay estimates
C1 C
the delayCof an RC ladder as
3
N
8
AND Gate Intrinsic Capacitance
9
Two Input NAND Gate
10
CMOS-Gate Transistor Sizing
It has been shown that to have If Wp = 2Wn the delay response for
symmetric switching in an inverter an inverter pair:
we need to make the width of the tinv _ pair t fall t rise
p-type device (Wp) at least 2->3 tinv _ pair R3Ceq 2
R
3Ceq
times that of the n-type device 2
tinv _ pair 6 RC eq
(Wn).
This approach increases the area The above expression can be
occupied by the p-type devices and compared to one for equal sized
dynamic power dissipation. inverter devices. The inverter pair
delay becomes:
Some structures can be cascaded to
use minimum or equal sized tinv _ pair t fall t rise
devices without compromising the tinv _ pair R 2Ceq 2 R 2Ceq
switching response. tinv _ pair 6 RC eq
11
Stage Ratio
12