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Thyristors (SCRs)
OUTLINE
N+
19
10 cm
-3
N+
19
10 cm
-3 10 Cross-sectional
J3 view showing
17 -3 30-
P 10 cm
100 vertical
J 2
orientation of
13 14 50-
N 10 - 5x10 cm -3
1000 SCR.
J1
P 17
10 cm -3 30- SCRs with
+ 19 -3
50 kiloamp ratings
P 10 cm
have diameters
Anode of 10 cm or
greater.
Gate and cathode metallization for
slow (phase control) thyristor. Gate and cathode metallization
for fast (inverter grade) SCR
cathode gate wafer
distributed
gate
cathode area
(metallization
wafer
not shown)
i
A
SCR triggerable from forward blocking
state to on-state by a gate current pulse.
forward
on-state Thyristor latches on and gate cannot turn it
i >0 off. External circuit must force SCR off.
I G
H i =0
I
G Current to several kiloamps for V(on) of 2-
-V BO 4 volts.
RW
M
V V
BO vAK Blocking voltages to 5-8 kilovolts.
H
forward blocking
state VBO = breakover voltage ; I BO =
breakover current
Thyristor circuit symbol.
+ VA - VH = holding voltage I H = holding current
i K
A cathode
At breakover 1 + 2 - 1
K
Holes attracted
by ne gative
charge o f inje cted
Negative charge of electrons swept into n 1
p ele ctro ns layer partially compensate positive charge
1 +
J1
n J 2 d epletion of ionized donors exposed by growth of
1
+ + - width - no gate depletion of junction J2.
+ - + + current
J
2 - - -
- - J 2 d epletion Growth of depletion reduces width of
+ p - bases of Qnpn and Q pnp and thus
2 width - with
J3 gate current
- increases 1 and 2.
n Electrons
2
injected in
resp onse to Holes attracted by first wave of injected
gate current elctrons attract additional electrons and so
f low on - regenerative action.
K
Negative gate Conventional SCRs (phase control) have large
current G area cathodes - negative gate current cannot
remove stored charge from center of large
+ + cathode area.
N N
P
+ - - +
-
SCR stays latched on in spite of negative gate
N current.
P
A
External circuit must force anode current to
negative values in order that enough stored
charge be removed from SCR so that it can
turn off.
x
total
carrier
N NA
density D
2 1
1
N
A
N
2 D1
x
T t t
C d(on)
v tr
C
Io t ps
control v (t)
AK
t
t
tr = time required for anode current to reach on-state
value. Anode current rate-of-rise diF/dt limited by
external inductance.
Time intervals that T can be on
A
tps = time required for plasma to spread over whole
i cathode area from cathode periphery near gate.
G
t
Delay or trigger angle VAK does not attain on-state value until complete area
of cathode is conducting.
Copyright by John Wiley & Sons 2002 SCRs -8
Thyristor Turn-off Behavior
diR
t
dt 3
t2
iA ( t )
I IR t
R
t1
4 Turn-off waveforms
dv
F
dt
v (t) V t
AK REV
N2 P N2
2 i (t)
G
N
1
P1
t
i
A A
SCR first turns on at cathode pe riphe ry n earest gate. Use shaped gate current pulse for
rapid turn-on.
Current constricted to small areas during initial phases of turn-
on, td(on) and tr.
Rate effect
dVF
dt significantly increased.
max
maximum
V +
temperature G
G
IG
I I V
minimum G G G
trigger 1 2 R
GG
current
i (t)
G