PN-Junction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than
the Cathode --- Current flows in the direction of the arrow in the
symbol.
Reverse Bias --- External battery makes the Cathode more positive
than the Anode --- A tiny current flows opposite to the arrow in the
symbol.
 Graphical
PN-Junction Diode V-I Characteristic

Forward Bias Region

Reverse Bias Region

Reverse
breakdown
Mathematical Approximation

VD
ηVT
ID = Is (e -1)
Ideal PN Junction Diode V-I Characteristic

Forward Bias – Short Circuit

Reverse Bias – Open Circuit

 Diode Reverse Recovery Time

ta is the time to remove the charge stored in the

depletion region of the junction
tb is the time to remove the charge stored in the bulk
semiconductor material
Reverse Recovery Characteristics
Soft Recovery

Reverse recovery time = trr = ta+tb

Peak Reverse Current = IRR = ta(di/dt)
Reverse Recovery Characteristics
Abrupt Recovery

Reverse recovery time = trr = ta+tb

Peak Reverse Current = IRR = ta(di/dt)

 Series-Connected Diodes

• Use 2 diodes in series

to withstand higher
reverse breakdown
voltage.
• Both diodes conduct
the same reverse
saturation current, Is.
 Diode Characteristics

• Due to differences
between devices,
each diode has a
different voltage
across it.
• Would like to
“Equalize” the
voltages.
Series-Connected Diodes with
Voltage Sharing Resistors
Series-Connected Diodes with
Voltage Sharing Resistors
 Series-Connected Diodes with
Voltage Sharing Resistors
• Is = Is1+IR1 = Is2+IR2
• IR1 = VD1/R1
• IR2 = VD2/R2 = VD1/R2

• Is1+VD1/R1 = IS2+VD1/R2
• Let R = R1 = R2
• Is1 + VD1/R = Is2 +VD2/R
• VD1 + VD2 = Vs
 Example 2.3

• Is1 = 30mA, Is2 = 35mA

• VD = 5kV

• (a) – R1=R2=R=100kΩ,
find VD1 and VD2

• (b) – Find R1 and R2

for VD1=VD2=VD/2
 Example 2.3 (a)
Is1 = 30mA
Is2 = 35mA
R1 = R 2 = R = 100kΩ
-VD = -VD1 - VD2
VD2 = VD - VD1

VD1 VD2
Is1 + = Is2 +
R R
VD R
VD1 = + (IS2 -IS1 )
2 2
5kV 100k
VD1 = + (35Χ10-3 - 30Χ10 -3 ) = 2750Volts
2 2
VD2 = VD - VD1 = 5kV - 2750 = 2250Volts
 Example 2.3 (a) simulation

R1 + U1
D1
100kOhm -2.727k V DC 1MOhm
- DIODE_VIRTUAL*

V1
5000 V

R2 + U2
D2
100kOhm -2.273k V DC 1MOhm
- DIODE_VIRTUAL**
 Example 2.3 (b)
Is1 = 30mA
Is2 = 35mA
VD
VD1 = VD2 = = 2.5kV
2
VD1 VD2
Is1 + = Is2 +
R1 R2

VD2R1
R2 =
VD1 - R1(Is2 -Is1 )
R1 = 100kΩ
2.5kVΧ100kΩ
R2 =
2.5kV -100kΩΧ(35Χ10-3 - 30Χ10-3 )
R2 = 125kΩ
 Example 2.3 (b) simulation

R1 + U1
D1
100kOhm -2.500k V DC 1MOhm
- DIODE_VIRTUAL*

V1
5000 V

R2 + U2
D2
125kOhm -2.500k V DC 1MOhm
- DIODE_VIRTUAL**